UF2820P MACOM | Alldatasheet

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Technical content

Features

l N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l Common Source Configuration l Lower Noise Floor Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Drain-Source Voltage V 05 65 V

1 Gate-Source Voltage I VGS I 20 I v I

I DS 2.8 A PD 53 W T, 200 “C I StorageTemperature

1 Thermal Resistance

I TSTG 1 -55to+150 I “C ( Electrical Characteristics at 25°C v2.00 Parameter Drain-Source Breakdown Voltage Symbol Min Max Units lest Conditions BV,,, 65 - V V,,=O.O V, 1,,=4.0 mA‘ I Drain-Source Leakage Current ‘DSS 2.0 mA V,,=28.0 V, V,,=O.O V’ 1 1 , I Gate-Source Leakage Current GateThreshold Voltage Forward Transconductance _ Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency ‘ass V GWHI GM C ES C ass C RSS 2.0 pA V&20 v, v,,=o.o V’ .160 - S V&O.0 V, 1,,=200.0 mA, AV,,=l .O V, 80 us Pulse’ 14 pF V,,=28.0 V, F=l .O MHz’ 10 pF ‘.‘,,=28.0 V, F=l .O MHz’ 4.8 pF V,,=28.0 V, F=l .O MHz’ Load Mismatch Tolerance * Per Side I I 1 VSWR-T - 1 2O:l 1 - ( V,,=28.0 V, 1,,=200.0 mA, P,,p20.0 W, FSOO MHz 1 Specifications Subject to Change Without Notice. MIA-COM, inc. North America: Tel. (800) 366-2266 l Asia/Pacific: Tel. +81 (03) 3226-1671 = Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020

RF MOSFET Power Transistor, 2OW, 28V UF282OP v2.00 Typical Broadband Performance Curves CAPACITANCES vs VOLTAGE F=l.OMHz POWER OUTPUT vs VOLTAGE P,,=l .O W I,,=200 mA F=500 MHz 5 10 15 20 25 30 10 15 25 30 35 GAIN vs FREQUENCY V,,=28 V P,,p20 W I,,=200 mA 100 200 300 400 500 FREQUENCY (MHz) EFFICIENCY vs FREQUENCY I,,=200 mA PO520 W F=500 MHz ‘O/ 5aL -I 100 200 300 400 500 FREQUENCY (MHz) POWER OUTPUT vs POWER INPUT 25 , V,,=28 V I,,=200 mA J POWER INPUT(W) Specifications Subject to Change Without Notice. M/A-COM, inc. North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020

RF MOSFET Power Transistor, 2OW, 28V UF282OP v2.00 Typical Device Impedance Frequency (MHz) Z,, (OHMS) z LOAD (OHMS) 100 9.5 - j 60.0 4.0 + j 68.0 300 5.0 - j 35.0 40.0 + j 48.0 500 2.0 - i 22.0 / 36.0 + i 34.0 ,I , I I I I V,,=28 V, I,,=200 mA, P,,,=20.0 Watts Z,, is the series equivalent input impedance of the device from gate to gate. Z LoAD‘ is the optimum series equivalent load impedance as measured from drain to drain. RF Test Fixture PAR T S LIS T cl c2l 3, 4. 5 go, IL 12 14, 17 c9, 134 18 cl5 UPf 56t@f 6.8pf Qdpf 2,OPF .01%4f 6eoPf souf mv. Cl6 O.luf Tl 2.50’ OF 50 MM <.085’ DD> SEMI RIGID COAX T2R 2B 2.50’ OF 25 OHM <.070’ OD) SEMI RIGID COAX T3 2.W OF 50 OHM <.085’ oD> SfMI RIGID COAX u 2 3, 14 TURNS OF NU 28 AWG ON TOROID CI3RE 4, 5 Specifications Sub!ect to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344)869 595 Fax (800) 618-8883 Fax +81 (03)3226-1451 Fax +44(1344)300 020