UF2820R MACOM | Alldatasheet
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N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices . . Absolute Maximum Ratings at 25°C Parameter 1 Symbol 1 Rating Units Drain-SourceVoltage Gate-Source Voltage Drain-Source Current V OS 6.5 V V GS 20 V I OS 4 A Power Dissipation Junction Temperature StorageTemperature PO 61 w T 200 “C T ST0 -55 to +150 “C Thermal Resistance 8 JC 2.66 “C/W Electrical Characteristics at 25°C Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance V,,=28.0 V, F=l .O MHz C ass 30 PF V,,=28.0 V, F=l .O MHz C Rss 8 PF V,,=28.0 V, F=l .O MHz GP 10 - dB V,,=28.0 V, 1,,=100.0 mA, P,fl20.0 W, F=500 MHz VSWR-T - 2O:l - V,,=28.0 V, l,,=lOO.O mA, P,e20.0 W, F=500 MHz Specifications Subject to Change Without Notice. MIA-COM, Inc. North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 = Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, 2OW, 28V UF2820R Typical Broadband Performance Curves GAIN vs FREQUENCY VD,=28 V I,,=1 00 mA PO,,,=20 W .T 10 I 100 200 300 400 5w FREQUENCY (MHz) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=100 mA POWER INPUT (W) v2.00 EFFICIENCY vs FREQUENCY I’,,=28 V IDD=l 00 mA PO,=20 W ‘OF 100 200 300 500 FREQUENCY (MHz) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=1 00 mA POWER INPUT(W) NOISE FIGURE vs FREQUENCY VDo=28 V I,,=1 00 mA Specifications Subject to Change Without Notice. IWA-COM, Inc. North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, 2OW, 28V U F2820R v2.00 Typical Device Impedance Frequency (MHz) z,, (OHMS) z LoAD (OHMS) 100 8.0-j 16.0 12.O+j6.0 200 5.5 - j 8.0 9.3 + j 6.0 300 4.0 - j 3.8 6.8 + j 5.5 400 3.0 - j 2.0 4.5 + J 4.5 500 2.0 + J 1 .O 3.0 + j 3.0 V,,=28 V, I,,=100 mA, P,,,=20.0 Watts Z,, is the series equivalent input impedance of the device from gate to source. Z LOAD is the optimum series equivalent load impedance as measured from drain to source. RF Test Fixture VDD A P VGG VGG J3 J3 Q 0 - - RF IN RF IN .Jl c1,c&c10 cz.c5 M w ca Cl1 Cl.2 ls Rl BOARD PARTS LlS7 CAPACITOR 1ooOpF CAPACITOR 1QF CAPACITOR 2DpF CAPACiTOR 25pF CAPACVOR S4OpF FEEDTHROUGH CAPA’XOR SOOPF MONOLITHIC CERAMIC CAPACITOR 0.1 uF ELEcTROLYnC CAPACTOR 5OuF 50 VOLTS 0.25’ X 0.20’ MICROSTRIP LINE 0.2SX 0.40’ MICROSTRIP UNE 0.30 X 0.06’ HAIRPIN. NO. 16 AWG 6 TURNS OF NC. 20 AWG ON ‘0.30’. CLOSE WOUND 12 NRNS OF NO. 20 AWG ON ‘OLW. CLOSE WOUND RESISTOR 72K OWS 025 WAlT UF262DR FPd o.oe Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020