UF28150J MA-COM | Alldatasheet

Document overview

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  • PDF pages: 3

Technical content

Features

  • DMOS structure
  • Lower capacitance for broadband operation
  • Common source configuration Package Outline 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustai ned operation near these maximum limits. 3. At 25°C Tcase, unless noted. ABSOLUTE MAXIMUM RATINGS1, 2, 3 Parameter Rating Drain-Source Voltage 65 Gate-Source Voltage 20 Drain-Source Current 16* Power Dissipation 389 Junction Temperature 200 Storage Temperature -65 to +150 Thermal Resistance 0.45 Symbol VDS VGS IDS PD TJ TSTG ΘJC Units V V A W °C/W ELECTRICAL SPECIFICATIONS: 25°C Parameter Test Conditions Units Min. Max. Drain-Source Breakdown Voltage VGS = 0.0 V, IDS = 20.0 mA* BVDSS 65 — Drain-Source Leakage Current VDS = 28.0 V, VGS = 0.0V* IDSS — 4.0 Gate-Source Leakage Current VGS = 20 V, VDS = 0.0 V* IGSS — 4.0 Gate Threshold Voltage VDS = 10.0 V, IDS = 400.0 mA* VGS(TH) 2.0 6.0 Forward Transconductance VDS = 10.0 V, IDS = 4000.0 mA, ∆VGS = 1.0 V, 80µs pulse* GM 2.0 — Input Capacitance VDS = 28.0V, F = 1.0 MHz* CISS — 180 Output Capacitance VDS = 28.0V, F = 1.0 MHz* COSS — 120 Reverse Capacitance VDS = 28.0V, F = 1.0 MHz* CRSS — 32 Power Gain VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz GP 8 — Drain Efficiency VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz ηD 55 — Load Mismatch Tolerance VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz VSWR-T — 10:1** Notes: * Per side ** At all phase angles

RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant UF28150J

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. CISS COSS COSS VDS (V) Typical Broadband Performance Curves Capacitance (PF) Capacitance vs Voltage F=1.0 MHz VDD (V) Power Output (W) Power Output vs Voltage PIN =24 W IDQ =400 mA F=500 MHz Frequency (MHz) Gain (dB) Gain vs Frequency VDD =28V POUT =100W IDQ =400mA Frequency (MHz) Power Input (W) Power Output (W) Power Output vs Power Input VDD =28W IDQ =400mA Efficiency (%) Efficiency vs Frequency VDD =28W IDQ =400mA POUT =150W

RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant UF28150J

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. HANDLING PROCEDURES: STATIC SENSITIVITY Please observe the following precautions to avoid damage: DMOS devices are sensitive to electrostatic discharge (ESD) an d can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. PARTS LIST C23 C12 C2, 3, 13, 22 C7,16 C4,6,15,17 C18 T2,3,4,5 L3,4 RL1 Q1A, 1B 1.0pF 9.1pF 11pF 270pF 680pF .015uF 50uF 50V 11K OHM .25 W. 10% 47 OHM .05 W. 10% 12 OHM .25 W. 10% 2.50’ OF 50 OHM (.85’ OD) SEMI-RIGID CABLE 2.50’ OF 10 OHM (.70’ OD) SEMI-RIGID CABLE 2.50’ OF 50 OHM (.141’ OD) SEMI-RIGID CABLE 5uH 16 TURNS OF NO. 18 AWG ON TORID CORE (INDIANA GENERAL F6278-Q1) 4 TURNS OF NO. 18 AWG ON .125 DIAMETER 9 TURNS OF NO. 18 AWG ON 15 OHM 2 W. 10% RESISTOR UF28150J F (MHz) ZIN (Ω) ZLOAD (Ω) 100 3.7 - j5.9 3.0 - j0.7 300 2.7 - j5.9 2.6 - j0.55 500 2.5 - j2.9 2.5 - j0.5 VDD = 28V, IDQ = 400mA, POUT = 150W TYPICAL OPTIMUM DEVICE IMPEDANCES