UF28150J MACOM | Alldatasheet

Document overview

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Technical content

150 WATTS, 100 - 500 MHz, 28 V

  • N-Channel Enhancement Mode Device
  • Applications
  • 150 Watts CW
  • Common Source Gemini Configuration
  • RESFET Structure
  • Internal Input Impedance Matching
  • Gold Metallization ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Units Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS 20 V Drain-Source Current I DS 28 A Dissipation @25°C P D 233 W Storage Temperature Tstg -55 to +150 °C Junction Temperature Tj 200 °C Thermal Resistance θjc 0.75 °C/W ELECTRICAL CHARACTERISTICS AT 25°C (*per side) Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BVDSS 60 - V I D=40 mA, VGS=0.0 V* Drain-Source Leakage Current IDSS - 4.0 mA V DS=28.0 V, VGS=0.0 V* Gate-Source Leakage Current IGSS - 2.0 µA VGS=20 V, VDS=0.0 V* Gate Threshold Voltage V GS(th) 2.0 6.0 V V DS=10.0 V, IDS=200 mA* Forward Transconductance G m 1.0 - S V DS=10.0 V, IDS=2000 mA (pulsed)* Input Capacitance C ISS 200 pF V DS=28.0 V, f=1.0 MHz (Reference Only)* Reverse Capacitance C RSS 50 pF V DS=28.0 V, f=1.0 MHz* Output Capacitance C OSS 14 pF V DS=28.0 V, f=1.0 MHz* Power Gain G P 10 - dB V DD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz Collector Efficiency η 50 - % V DD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz Load Mismatch Tolerance VSWR - 3.0:1 - V DD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz TYPICAL OPTIMUM DEVICE IMPEDANCE F (MHz) Z in (Ω) Z load (Ω) 935 4.6 + j8.0 2.3 + j3.1 960 4.7 + j7.8 2.4 + j3.1 M/A-COM POWER TRANSISTORS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501 (310) 320-6160 • FAX (310) 618-9191 M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96

TYPICAL BROADBAND PERFORMANCE CURVES - UF28150J Output Power vs Input Power Output Power vs Drain Voltage Power Input (W) 100 02468 1 0

960 MHz

935 MHz

Vds = 26 V Idq = .40 A Power Output (W) Drain Voltage (V) 100 19 21 23 25 27 29 Frequency = 960 MHz Idq = .40 A Pin = 8.0 W Power Output (W) Gain vs. Frequency Efficiency vs. Frequency Frequency (MHz) 9.5 10.5 11.5 932 936 940 944 948 952 956 960 964 Gain (dB) Frequency (MHz) 932 936 940 944 948 952 956 960 964 Vds = 26 V Idq = .40 A Po = 80 W Efficiency (%) Gain vs. Temperature Capacitance vs. Voltage Case Temperature (C) 20 40 60 80 100 120 Vds = 26 V Idq = .40 A Po = 80 W F = 960 MHz Gain (dB) Drain Voltage (V) 0 5 10 15 20 25 30 35 Crss Coss F = 1 MHz M/A-COM POWER TRANSISTORS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501 (310) 320-6160 • FAX (310) 618-9191 M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96

RF MOSFET Power Transistor, 15OW, 28V UF2815OJ v2.00 Typical Device Impedance Frequency (MHz) 100 300 500 Z,, (OHMS) Z LoAD (OHMS) 2.7 - j 5.8 2.6 - j 0.55 V,,=28 V, I,,=400 ?A, PouT=150.0 Watts Z,, is the series equivalent input impedance of the device from gate to gate. Z LOAD is the optimum series equivalent load impedance as measured from drain to drain. . . RF Test Fixture ‘V, BIAS RFDPIJT RFDJTPUT m cl &wR c7. Y c4 & ls 17 cl6 RI n T.3345 16 u L34 Ru mhls Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 l Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020