UF2810P MACOM | Alldatasheet
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Features
l N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation Absolute Maximum Ratings at 25°C L 1 1% 1 246 077 .097 N 1 3.61 1 4.37 1 J42 1 .I72 Electrical Characteristics at 25°C Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance * Per Side C oss 5 PF V,,=28.0 V, I==1 .O MHz’ 0, - 2.4 pF VDs=28.0 V, F=l .O MHz’ GP 10 - dB V,,=28.0 V, I,,,=1 00.0 mA, PO,,,=1 0.0 W, F=500 MHz VSWR-T - 203 - V,,=28.0 V, IDo= 00.0 mA, Poe1 0.0 W, F=500 MHz pecifications Subject to Change Without Notice. North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax (800) 618-8883 Fax +81 (03) 3226-1451 M/A-COM, Inc. m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, iOW, 28V UF281 OP v2.00 Typical Device impedance Frequency (MHz) 100 &., (OHMS) z LOAD (OHMS) 30.0 - i 150.0 70.0 + i 110.0 300 15.0 - j 90.0 55.0 + j 80.0 500 4.2 - j 46.0 48.0 + j 50.0 V,,=28 V, l,=jOO mA, P,,?lO.O Watts Z,, is the series equwalent input impedance of the device from gate to gate. Z LOAD is tbe optimum series equivalent load impedance as measured from drain to drain. RF Test Fixture P A R T S L I ST Cl0 27 PC c5 30 PF cl 6.8 pr ii36 15 PC 7, a 9 SQo PC cu. 12 13, 1% 17 .OfS uf us .louf Cl6 SOUfSOV. zL3 loo mr4 P5 v. UK Mw 25 V. Tt 2 3 250 5 SO Du SwdIGID COAX L4 lo 7 TURNS 5 NO. 22 AVG VIRE L7, 9 1s TURNS 5 NJ. 22 AVG vm ue 35’ OF SO OHN TRANSNISSIDN IDE l-3, 4 .7v 5 50 pE( T-W LINE LS,6 1~OFSOOHNlRANSNISSIONLIM 01 lF281OP Specifications Subject to Change Without Notice. MIA-COM, Inc. North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax (800) 618-8883 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020