UF28100V MACOM | Alldatasheet
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Features
l N-Channel Enhancement &lode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C I Parameter ( Symbol 1 Rating ( Units Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance V DS 65 V V GS 20 V ‘DS 12 A PD 250 W TJ 200 “C T sic -55 to +150 “C 8 IP 0.7 “crw Electrical Characteristics at 25°C v2.00 Parameter Drain-Source Breakdown Voltage Drain-Source LeakageCurrent Gate-Source Leakage Current Symbol Min Max Units lest Conditions BV,,, 65 - V V,.=O.O V. I& 5.0 mA I DSS 3.0 mA V,,=28.0 V, V,,=O.O V’ , , ‘GSS ) 3.0 ] fl 1 v,,=2ov, vDs=o.o v I I Gate Threshold Voltage V GSIW 2.0 6.0 V V,,=lO.O V, 1,,=300.0 mA‘ ForwardTransconductance GM 1.5 - S V,,=10.0 V, 1,,=3000.0 mA, AV,,=l .O V, 80 us Pulse’ input Capacitance c - 15s 135 pF V,,=28.0 V, F=l .O MHz’ Output Capacitance C ass 90 PF V,,=28.0 V, F=l .O MHz’ Reverse Capacitance C RSS 24 pF V,,=28.0 V, F=l .O MHz’ Power Gain GP 10 - dB V,,=28.0 V, 1,,=600.0 mA, P,,$OO.O W, F=SOO MHz Drain Efficiency 50 - % V,,=28.0 V, 1,,=600.0 mA, P,,,=lOO.O W. F=500 MHZ Load Mismatch Tolerance VSWR-T - 3O:l - V,,=28.0 V, lDD=800.0 mA, PbbylOO.0 W, F=500 MHz - Per Side Specifications Subject to Change Wiihout Notice. M/A-COM, Inc. NoFth America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, lOOW, 28V UF281 OOV v2.00 Typical Broadband Performance Curves EFFICIENCY vs FREQUENCY P,,=lO W I,,=600 mA (Push-Pull Device) POWER OUTPUT vs SUPPLY VOLTAGE 120 P&O W I,,=600 mA F&O0 MHz loo 100 200 300 400 500 14 16 20 24 26 22 FREQUENCY (MHz) SUPPLY VOLTAGE(V) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=600 mA (Push-Pull Device) 2 4 6 8 10 12 POWER INPUT(W) Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 w Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, IOOW, 28V UF281 OOV v2.00 Typical Device Impedance Frequency (MHz) 100 300 500 5, (OHMS) Z,,,, (OHMS) 2.25 - j 1.75 7.5 + j 1 .O V,,=28 V, I,,=690 mA, P,,,=lOO.O Watts Z,, is the series equivalent input impedance of the device from gate to gate. Z LOAD is.tQe optimum series equivalent load impedance as measured from drain to drain. RF Test Fixture 0 0 0 Cl.c6 c2.Q c6.c7 c%ClO Cl1 Cl2 Rl .R4 rum Ll K Tl BOARD JlJ2 J3J4JS HEATSINK PARTS LlS.1 CHlP CAPACITOR. 2.OpF ATC B CHIP CAPACITOR. 5OOCPF CHIP CAPAC~OF!. 37pF ATC B CHIP CAPACITOR. 25OpF ATC B CHIP CAPACTTOR. .015uF CHIP CAPACTTOR. 5KvF ATC B CHIP CAPAClTOR. O.BpF ATC B ELECTROLtllC CAPACITCR, 5ouF 50 VOLTS RESISTOR. 27 OHM 25 WA-i-f RESISTOR 22K OHM 25 WATT INDUCTOR. 5 TURNS OF NO. 18 AWG ON ‘.lO INDUCTOR. 10 TURNS OF NC. 22 AWG ON R4 ,:, BALUN TRANSFORMER 50 0”M SEMI-RIGID COAX ‘.OBS X 3’ LONG ,:I BALUN TRANSFORMER. 25 C+iM SEMI-RIGID COAX ‘.070’ X 2.5’ LONG 13 BALUN TRANSFORMER. 10 OHM SEMI-RIGIG COAX ‘.070.X 2.5’ LONG ,:, BALUN TRANSFORMER. 50 OHM SEMI-RIGID COAX ‘.OW X 4’ LONG uF261oov ROGERS 5870. .Ml’lliICK CONNECTOR TYPE-N BANANA JACK FINNED ALUMINUM, DIN 7305OlB2-03 Specifications Subject to Change Without Notice. WA-COM, Inc. 9-295 North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020