UF281OOM MACOM | Alldatasheet
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N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C pi Power Dissipation PD 250 W JunctionTemperature T, 200 “C Storage Temperature T STG -55 to +150 “C Thermal Resistance El JO 0.7 “Ciw Electrical Characteristics at 25°C I Parameter ( Symbol 1 Min 1 Max 1 Units 1 I4 &w t.74 .m4 1 ale II 505 a&b, am 1 a?4 P m a¶ ooc 1 ace Test Conditions 1 Drain-Source Breakdown Voltage BVDSS 65 - V V,,=O.O V, I,,=150 mA’ I Drain-Source LeakageCurrent Gate-Source Leakage Current Gate Threshold Voltage ForwardTransconductance input Capacitance Output Capacitance Reverse Capacitance Power Gain ‘OS5 ‘GSS V GSCTHI GM C ISS C OS.5 3.0 mA v,,=2a.o v. vo,=o.o v 3.0 pA v,,=20 v, v,,=o.o V’ 1.5 - S V,,=lO.O V, 1,,=3000.0 mA, ~v,,=l .O V, 80 ps Pulse’ 135 pF v,=2a.o v, F=l .o MHz’ 90 pF V,s=28.0 V, F=l .O MHz’ C RSS 24 pF v,,=2a.ov, F=I .OMHZ* 10 - dB V,,=28.0 V, 1,,=600.0 mA, P,,=lOO.O W. F=500 MHz Drain Efficiency Return Loss 50 - 10 - I % v,,=%.O V, 1,,=600.0 mA, P,,=lOO.O W, F=500 MHz * Per Side Specifications Subject to Change Without Notice. M/A-COM, inc. North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344) 869 595 Fax (800) 678-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, IOOW, 28V UF281OOM v2.00 Typical Broadband Performance Curves EFFICIENCY vs FREQUENCY 80. P,=lO W I,,=600 mA (Push-Pull Device) POWER OUTPUT vs SUPPLY VOLTAGE P,,,=lO W I,,=600 mA F=500 MHz loo t 100 200 300 400 so0 14 16 20 24 28 32 FREQUENCY (MHz) SUPPLY VOLTAGE (V) POWER OUTPUT vs POWER INPUT s 80 e i3 60 fs 5 40 V,,=28 V I,,=600 mA (Push-Pull Device) 0 1 2 4 6 8 10 12 POWER INPUT(W) Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 = Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
RF MOSFET Power Transistor, IOOW, 28v UF28100M v2.00 Typical Device Impedance Frequency (MHz) 100 Z,, (OHMS) Z,,,D (OHMS) ( 300 1 2.25 - j 1.75 1 7.5+j 1.0 I 500 1.5 + j 5.5 3.5 - j 3.5 I V,,=28 V, I,=600 mA, P,,,=lOO.O Watts Z,, is the series equivalent input impedance of the device from gate to gate. Z LcAD is the pptimum series equivalent load impedance as measured from drain to drain. RF Test Fixture Cl .c8 c2m c.5 c&c7 CS.ClO Cl1 Cl2 Rl.lU RR3 Ll BOARD JlJ2 J3.JdJ5 HEATSMK PARTS LIST CHIP CAPACITOR. 2.OpF ATC B CHIP CAPACITOR. EOXPF CHIP CAPACTTOR. S7pF ATC B CHIP CAPACITOR. 2WpF ATC B CHIP CAPACXTOR. .OlSuF CHIP CAPACTOR. 5BOpF ATC B CHIP CAPACITOR. O.BpF ATC 8 ELECTROLYI-IC CAPACTTOR. SOuF 54 VOLTS RESISTOR. 27 OHM 25 WAH RBSI.TOR. 22K OHM 25 WATT INDUCTOR. S TURNS OF NO. 18 AWG ON ‘.lO INDUCTOR. 1ONRNS OF NO. 27 AWG ON R4 ,:l BALUN TRANSFORMER 50 OIIM SEMI-RIGID WAX ‘.cesX3-LONG 61 BALUN TRANSFORMER. 25 OHM SEMI-RIGID COAX ‘370’ X 2.3 LONG 1:s BALUN TR*NsFoRMER 10 OHM SEMI-RIGIG COAX ‘370 X 25’ LONG 1:l BALUN TRAMFORMER. 50 OHM SEMI-RIGID COAX ‘.oBs x 4. LONG uF2s1ooM ROGERS 5870. .m?’ THICK CONNECIOR. TYPE ‘N BANANAJACK FINNED ALUMINUM. DiN 73XD1B2-03 Specifications Subject tD Change !ffiiDut Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 B Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020