UF28100M MA-COM | Alldatasheet

Document overview

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Technical content

Features

  • N-channel enhancement mode device
  • DMOS structure
  • Lower capacitances for broadband operation
  • High saturated output power
  • Lower noise figure than competitive devices
  • RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Rating Drain-Source Voltage 65 Gate-Source Voltage 20 Drain-Source Current 12* Power Dissipation 250 Junction Temperature 200 Storage Temperature -55 to +150 Thermal Resistance 0.7 Symbol VDS VGS IDS PD TJ TSTG θJC Units V V A W °C/W ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BVDSS 65 - V VGS = 0.0 V , IDS = 15.0 mA Drain-Source Leakage Current IDSS - 3.0 mA VGS = 28.0 V , VGS = 0.0 V Gate-Source Leakage Current IGSS - 3.0 µA VGS = 20.0 V , VDS = 0.0 V Gate Threshold Voltage VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 300.0 mA Forward Transconductance GM 1.5 - S VDS = 10.0 V , IDS 3000.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 135 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 90 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 24 pF VDS = 28.0 V , F = 1.0 MHz Power Gain GP 10 - dB VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz Drain Efficiency ŋD 50 - % VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz Load Mismatch Tolerance VSWR-T - 30:1 - VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz Return Loss RL 10 - dB VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz F (MHz) ZIN (Ω) ZLOAD (Ω) 300 2.25-j1.75 7.5j1.0 VDD=28V, IDQ=600 Ma, POUT =100.0 W TYPICAL DEVICE IMPEDANCES ZIN is the series equivalent input impedance of the device from gate to gate. ZLOAD is the optimum series equivalent load impedance as measured from drain to drain. *Per side PACKAGE OUTLINE

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 UF28100M

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical Broadband Performance Curves SUPPLY VOLTAGE (V) POWER OUTPUT VS SUPPLY VOLTAGE PIN=10 W IDQ=600 mA F=500 MHz POPWER OUTPUT (W) 120 100 16 28 14 24 32 POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =600 mA (Push pull device) POWER OUTPUT (W) POWER INPUT (W) 300MHz 200MHz 120 100 1 10 8 4 0 12 500MHz EFFICIENCY VS FREQUENCY PIN=10W IDD =600 mA (Push pull device) EFFICIENCY (%) 200 400 FREQUENCY (MHz) 300 100 500 400MHz

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 UF28100M

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. TEST FIXTURE ASSEMBLY TEST FIXTURE SCHEMATIC