UF27520070A1 SMCDIODE | Alldatasheet

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DATA SHEET D0050, Rev. -  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com UF27520070A1 SILICON ULTRA FAST RECTIFIER DIE Applications:  Switching Power Supply  Converters  Free-Wheeling Diodes  Polarity Protection Diode Features:  Ultra low Reverse Leakage Current  Soft Reverse Recovery at Low and High Temperature  Very Low Forward Voltage Drop  Low Power Loss, High Efficiency  High Surge Capacity  Guard Ring for Enhanced Durability and Long Term Reliability  Guaranteed Reverse Avalanche Characteristics  Electrically / Mechanically Stable during and after Packaging Maximum Ratings: Characteristics Symbol Condition Max. Units PeakReverseVoltage VRM - 200 V AverageForwardCurrent IF(AV) 50% duty cycle@TC=100°C, rectangularwaveform 90 A PeakOneCycleNon- RepetitiveSurgeCurrent IFSM 8.3ms,Sinepulse 750 A JunctionTemperature TJ - 150 C StorageTemperature Tstg - -65to+150 C Electrical Characteristics: Characteristics Symbol Condition Max. Units ForwardVoltageDrop* VF1 @90A,Pulse,TJ=25C 1.0 V ReverseCurrent IR1 @VR =200V,Pulse, TJ =25C 60 μA ReverseRecoveryTime Trr IF=0.5A;IR=1.0A;IRR=0.25A 70 ns

DATA SHEET D0050, Rev. -  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com UF27520070A1 Mechanical Dimensions: In Inches (mm) Bottomside:Ni-1000nm±10% Ag-200nm±10% Top side:Al-5μm±10% Bottomsideiscathode,topsideisanode DimensionH=0.009±0.001(0.23±0.026)(Itcanbe customizedaccordingtocustomerrequirements) H A B DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentor anyothercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC -SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.. B A