UDN-6510A ETC1 | Alldatasheet
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UDN-6510A/R AND UDN-6514A/R HIGH- VOLTAGE SOURCE DRIVERS at eeinneneniniS UDN-6510A/R AND UDN-6514A/R HIGH-VOLTAGE SOURCE DRIVERS © TTL/MOS-Compatible Inputs ao ‘© High Output-Breakdown Voltage Raa ‘© 40 mA Output-Current Capability ree ‘© Low Power Dissipation Ce) {> Ms} «© Reliable Monolithic Construction 2 = a FASY. EFFECTIVE INTERFACE for low-level 2 a TTL or MOS circuitry and high-voltage loads is 7 ee available with Sprague UDN-6510A /R and UDN- cs axa] 65144 /R bipolar integrated circuits. These eight- He who channel devices drive the anodes of gas-discharge displays or the grids and anodes of large, multi- Brae New AveAin Late dot-matrix vacuum-fluorescent display shifters and PNP /NPN driver stages. Driver inputs " erate with open-drain PMOS or CMOS, or with Types UDN-6510A and UDN-6510R supply an cpen-collector or anderd PAE om output-voltage swing of up to 100 V with a maximum Vj, of 200 V. Typically, the output is Types UDN-6510R and UDN-6514R are fur- switched between +100 V and +180 V. nished in 18-pin dual in-line industrial-grade, her- ° metically sealed ceramic packages. Types UDN- Types UDN-6514A and UDN-6514R can switch 6510A and UDN-6514A are supplied in inexpensive output-voltage levels from ground to +135 V with 18-pin dual in-line plastic packages. To simplify appropriate pull-down circuitry and a maximum applications designs, all units have input connections supply voltage of +140 V. on one side of the package and output pins on the Each device in the series has eight independent other. All devices are rated for operation over the drivers made up of switched constant-current level temperature range of —20°C to +85°C. ABSOLUTE MAXIMUM RATINGS at Tl, = +25°C (Va = GROUND unless otherwise specified) Supply Voltage, Vj (UDN-6510A/R) 200 V (UDN-6514A/R) o MOV Output OFF Voltage (Vier = Veg), Vow (UDN-6510A/R) —100 ¥ Output Current, lax . . . —40 mA Package Power Dissipation, P, . See Graph Operating Temperature Range, T, —20°C to +85°C Storage Temperature Range, T, . —55°C to +150°C 2-7
UDN-6510A/R AND UDN-6514A/R HIGH-VOLTAGE SOURCE DRIVERS SS PACKAGE POWER DISSIPATION AS A FUNCTION OF TEMPERATURE PARTIAL SCHEMATIC ‘One Driver (All Types) é Vea 2 . 215 i. 5 yN Ey AK 10K 5K = OS ex Pur outeut 3 PON Fy ISS zo ies ET B 100 TS ) AMBIENT TEMPERATURE, Ta. IN °C Caution: The high input impedance of these devices makes them suscepti ble to static discharge damage associated with handling and testing. Techniques similar to those used for handling MOS devices should be employed. ELECTRICAL CHARACTERISTICS at T, = +25°C, Vpg = 200 V (UDN-6510A/R) or 140 V (UDN-6514A/R), all voltage measurements are referenced to ground (unless otherwise noted) Applicable Characteristic Symbol] Devices Test Conditions Output Leakage Current UON-6510A/R | Von = 100V, Va = O4V.,— +70] — — 15 | uA | [_UDN-OSTEAR [Van = OV, Vy =04VZ=70C[— — 5 | A] Output ON Voltage] Vor [_UDN-BSTOWR | Vy = 24 Vi yy = —25 mA [SS 17 TV [| UDN-ESTARIR Vy = 24 Ve ty = = 28 mA ST TV Input ON Current [Ny = 24 Vee Te | = __375 650 poly Current [Cait inputs open 00] One input = 3.5 V RECOMMENDED OPERATING CONDITIONS Vu [_wonesiowr[ ss 80 UDN-654AR [5g Outpt OFF Vote UON-SS1ONR | Refeenee Ve SSCS | [Input ON Votage [Vy [eT Output ON Curent Ton [A NOTE: Negative current is defined as coming out of the specified device pin
UDN-6510A/R AND UDN-6514A/R HIGH- VOLTAGE SOURCE DRIVERS ee TYPICAL PLASMA GAS-DISCHARGE DISPLAY APPLICATION EQUIVALENT CIRCUIT TIUCMOS DIGIT SELECT +180V FF label” lhl“ lh DIGIT Per sasye J FEE Ey osuoy | 2 == anv GD + # gee a a a 4 + Ga iliisz= = ia aococcocme CEO, 21, | LHe = sev sav os === €had=bal bel“) Sa eniet A ‘SWITCH Sp leSeleceCeSeces, if TUcHOS SEGMENT seLect Bag. We. A088 MULTIPLEXED DOT-MATRIX VACUUM-FLUORESCENT DISPLAY APPLICATION UON-65144 -—o} > fa} LLL —aA_s Li 2o—fa}—f> 115] SoG zo 4 | 7s ° fi) + | oe {3} Lo} = ~ siaov