UDN302

UDN302_15 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD UDN302 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-278.B P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET „ DESCRIPTION The UDN302 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON)=55mΩ @ VGS=-4.5V * RDS(ON)=80mΩ @ VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Gate 1.Source 3.Drain „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UDN302L-AE3-R UDN302G-AE3-R SOT-23 S G D Tape Reel „ MARKING NC03 L: Lead Free G: Halogen Free

UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 5 0 2 - 2 7 8 . B „ ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS -20 V Gate-Source Voltage V GSS ±12 V Continuous Drain Current I D -2.4 A Pulsed Drain Current I DM -10 A Maximum Power Dissipation P D 0.5 W Junction Temperature T J +150 ℃ Storage Temperature T STG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction-to-Ambient θJA 250 ℃/W Junction-to-Case θJC 75 ℃/W „ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=-250µA -20 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=-250µA, Referenced to 25°C -12 mV/°C Drain-Source Leakage Current I DSS V DS=-16V, VGS=0V -1 µA Gate-Source Leakage Current I GSS V GS=±12V, VDS=0V ±100 nA ON CHARACTERISTICS(Note) Gate Threshold Voltage V GS(TH) V DS =VGS, ID =-250µA -0.6 -1.0 -1.5 V Gate Threshold Voltage Temperature Coefficient ΔVGS(TH)/ΔTJ ID=-250 µA, Referenced to 25°C 3 mV/°C VGS=-4.5V, ID=-2.4A 44 55Static Drain-Source On-Resistance R DS(ON) VGS=-2.5V, ID=-2A 64 80 mΩ On-State Drain Current ID(ON) V GS=-4.5V, VDS=-5V -10 A Forward Transconductance g FS V DS=-5V, ID=-2.4A 10 S DYNAMIC PARAMETERS Input Capacitance C ISS 882 pF Output Capacitance C OSS 211 pF Reverse Transfer Capacitance C RSS VDS=-10V, VGS=0V, f=1.0MHz 112 pF SWITCHING PARAMETERS (Note) Total Gate Charge Q G 9 14 nC Gate Source Charge Q GS 2 nC Gate Drain Charge Q GD VDS=-10V, ID=-2.4A, VGS= - 4 . 5 V 3 nC Turn-ON Delay Time t D(ON) 13 23 ns Turn-ON Rise Time t R 11 20 ns Turn-OFF Delay Time t D(OFF) 25 40 ns Turn-OFF Fall-Time t F VDD=-10V, ID=-1A, VGS=-4.5V RG=6Ω 15 27 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage V SD V GS=0V, IS=-0.42A (Note) -0.7 -1.2 V Maximum Body-Diode Continuous Current I S -0.42 A Note: Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 5 0 2 - 2 7 8 . B „ TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, VTH (V) Drain Current vs. Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage, BVDSS(V) 250 100 150 200 300 350 400 450 03 0 10 20 4 0 250 100 150 200 300 Drain-Source On-State Resistance Characteristics Drain to Source Voltage, VDS (mV) 1500 10050 200 3.0 1.0 2.0 2.5 0.5 1.5 ID=-2.4A VGS=-4.5V ID=-2A VGS=-2.5V

UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 5 0 2 - 2 7 8 . B UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.