UDF015N120 UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD UDF015N120 A d v a n c e Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2023 Unisonic Technologies Co., Ltd QW-R502-D146.a 0.15A, 1200V N-CHANNEL DEPLETION-MODE POWER MOSFET DESCRIPTION The UTC UDF015N120 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed. FEATURES * RDS(ON) ≤ 500 Ω @ VGS=0V, ID=75mA * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UDF015N120L-AA3-R UDF015N120G-AA3-R SOT-223 G D S Tape Reel UDF015N120L-T92-B UDF015N120G-T92-B TO-92 G D S Tape Box UDF015N120L-T92-K UDF015N120G-T92-K TO-92 G D S Bulk Note: Pin Assignment: G: Gate D : D r a i n S : S o u r c e (1) R: Tape Reel, B: Tape Box, K: Bulk (2) AA3: SOT-223, T92: TO-92 (3) G: Halogen Free and Lead Free, L: Lead Free UDF015N120G-AA3-R (1)Packing Type (2)Package Type (3)Green Package MARKING SOT-223 TO-92
UDF015N120 A d v a n c e Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw QW-R502-D146.a ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) V DSS 1200 V Drain-Gate Voltage (Note 2) V DGX 1200 V Gate-Source Voltage V GSS ± 2 0 V Drain Current Continuous I D 0 . 1 5 A Pulsed I DM 0 . 3 A Power Dissipation SOT-223 PD 0.8 W TO-92 0.625 W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond whic h the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ=+25°C~+150°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient SOT-223 θJA 150 °C/W TO-92 200 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=-5V 1200 V Drain-Source Leakage Current I D(OFF) V DS=1200V, VGS=-5V 0.1 μA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse V GS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate to Source Cut Off Voltage V GS(OFF) V DS=3V, ID=8µA -2.0 -4.5 V Drain-Source Leakage Current I DSS V DS=25V, VGS=0V 30 mA Static Drain-Source On-State Resistance R DS(ON) V GS=0V, ID=75mA 500 Ω SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD I SD=3.0mA, VGS=-10V 1 V Note: 1. Repetitive rating, pulse width limited by maximum junction temperature. 2. Pulse width ≤ 380μs; duty cycle ≤ 2%.
UDF015N120 A d v a n c e Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw QW-R502-D146.a UTC assumes no responsibility for equipment failures that resul t from using products at values that exceed, even momentarily, rated va lues (such as maximum ratings , operating condition ranges, or other parameters) listed in products specifications of any and all UT C products described or contained herein. UTC products are not designed for use in life support appliance s, devices or systems where malfunction of these products can be reasonably expected to result in perso nal injury. Reproduction in whole or in part is prohibited without the pr ior written consent of the cop yright owner. UTC reserves the right to make changes to information published in this document, includi ng without limitation specifications and product descriptions, at any time and without notice. This docu ment supersedes and replaces all information supplied prior to the publication hereof.