UD8KB05_V01 ZSELEC | Alldatasheet
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! Diffus ed Junction ! High Current Capability ! High Reliability M echanic al Data ! Moun tin g Position: Any ! Marking: Type Number M aximum R atings and Electrical Characteristics @T A=25° C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol UD8K Unit P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR 50 100 200 400 600 800 1000 V RM S Reverse Voltage VR(RM S) 35 70 140 280 420 560 700 V A verage Rectified Output Current ( N o t e 1 ) @ TA = 50° C IO 8.0 A Non-Repetiti ve Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M 175 A Forward V oltage (per element) @IF = 8.0A V FM Pe a k R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @TA = 100° C IRM 500 µA T ypical Thermal Resistance (Note 3) R /G01JA 35 K Operating and St orage Temperature Range Tj, TST G -55 to +150 °C Note: 1. Leads m aintained at ambient temperature at a distance of 9.5mm from the case. 3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad 1 of 2 Z ibo Seno Electronic Engineering Co., Ltd. T erminals: Plated Leads Solderable per UD8K UD8K UD8K UD8K UD8K UD8K www.senocn.com UD6KB05 – UD8KB100 V B05 B10 B20 B40 B60 B80 B100 1.0 D3K D3K Dim Min Max A 13.5 14.6 B 3.00 3.60 C 10.2 D 13.0 14.4 E 2.20 F 6.70 7.30 G 3.51 H 0.30 0.55 I 1.20 /c198 1.42 /c198 J 0.66 0.86 O 1.80 2.40 P 3.00 All Dimensions in mm 1.20 11.0 4.11 3.40
UD8KB05 – UD8KB100 0.1 1.0 0 0.2 I , INST A NTANEOUS FWD CURRENT (A) F V , INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 T ypical Fwd Characteristics F T = 150° CJ T = 25° CJ Pu lse Width = 300 µs 100 125 1 10 100 I , P E AK FWD SURGE CURRENT (A) FSM N U MBER OF CYCLES AT 60 Hz Fig.3 Max Non-Repetitive P eak Fwd Surge C urrent T = 150°c Single Half Sine Wave (JEDEC Method) j 100 11 0 1 00 C , JUNCTION CAP ACIT ANCE (pF) j V , REVERSE VOL TAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1MHz j 0.01 0.1 1.0 100 1000 10,000 0 20 40 60 80 100 120 140 I , INSTANT ANEOUS REVERSE CURRENT (mA) R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typi cal Reverse Characteristics T = 125°Cj T = 100°Cj T = 25°Cj T = 150°Cj 1.0 2.0 3.0 0 75 150 225 I , A VERAGE RECTIFIED CURRENT (A) O TEMPERATURE (°C) Fig.1 Forward Current Derating Curve 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com UD8KB05 – UD86KB100 4.0 5.0 6.0 7.0 8.0 150 175