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UNISONIC TECHNOLOGIES CO., LTD UD4606Q Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R211-021.B DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD4606Q provides excellent R DS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications. FEATURES * N-Channel: 30V/6.9A R DS(ON) = 22.5 mΩ (typ.) @ VGS=10V, ID=6.9A RDS(ON) = 34.5 mΩ (typ.) @ VGS=4.5V, ID=5A * P-Channel: -30V/-6A RDS(ON) = 37.5 mΩ (typ.) @ VGS=-10V, ID=-6A RDS(ON) = 44 mΩ (typ.) @ VGS=-4.5V, ID=-5A * Reliable and rugged SYMBOL SOP-8 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 1234567 8 UD4606QG-S08-R SOP-8 S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel
UNISONIC TECHNOLOGIES CO., LTD 2 of 10 www.unisonic.com.tw QW-R211-021.B MARKING UTC UD4606QG 2 341 5678 Date Code Lot Code
UNISONIC TECHNOLOGIES CO., LTD 3 of 10 www.unisonic.com.tw QW-R211-021.B ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) N-CHANNEL PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 30 V Gate-Source Voltage V GSS ±20 V Continuous Drain Current (Note2) I D 6.9 A Pulsed Drain Current (Note2) I DM 30 A Power Dissipation P D 2 W Junction Temperature T J +150 ° С Storage Temperature T STG -55 ~ +150 ° С P-CHANNEL PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GSS ±20 V Continuous Drain Current (Note 2) I D -6 A Pulsed Drain Current (Note 2) I DM -30 A Power Dissipation P D 2 W Junction Temperature T J +150 ° С Storage Temperature T STG -55 ~ +150 ° С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface Mounted on 1in 2 pad area, t≤10sec THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient (Note) θJA 67 80 ° С/W Note: Surface Mounted on 1in 2 pad area, t≤10sec
UNISONIC TECHNOLOGIES CO., LTD 4 of 10 www.unisonic.com.tw QW-R211-021.B ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) N-CHANNEL PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250uA 30 V Drain-Source Leakage Current I DSS V DS=24V, VGS=0V 1 uA Gate-Source Leakage Current I GSS V DS=0V, VGS=±20V 100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250uA 1 1.9 3 V Drain-Source On-State Resistance R DS(ON) VGS=10V, ID=6.9A 22.5 28 m Ω VGS=4.5V, ID=5A 34.5 42 m Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VGS=0V,VDS=15V,f=1.0MHz 680 pF Output Capacitance C OSS 102 pF Reverse Transfer Capacitance C RSS 77 pF SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) t D(ON) VDS=15V, VGS=10V, RG=3Ω, RL=2.2Ω 4.6 ns Turn-ON Rise Time t R 4.1 ns Turn-OFF Delay Time t D(OFF) 20.6 ns Turn-OFF Fall Time t F 5.2 ns Total Gate Charge (Note2) Q G VDS=15V, VGS=10V, ID=6.9A 13.8 nC Gate-Source Charge Q GS 1.82 nC Gate-Drain Charge Q GD 3.2 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) V SD I S=1A, VGS=0V 0.76 1 V Diode Continuous Forward Current (Note3) I S 3 A Reverse Recovery Time t RR IDS=6.9A, dI/dt=100A/μs 16.5 ns Reverse Recovery Charge Q RR 7.8 nC
UNISONIC TECHNOLOGIES CO., LTD 5 of 10 www.unisonic.com.tw QW-R211-021.B LECTRICAL CHARACTERISTICS(Cont.) P-CHANNEL PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=-250uA -30 V Drain-Source Leakage Current I DSS V DS=-24V, VGS=0V -1 uA Gate-Source Leakage Current I GSS V DS=0V, VGS=±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=-250uA -1.2 -2 -2.4 V Drain-Source On-State Resistance (Note2) R DS(ON) VGS=-10V, ID=-6A 37.5 45 m Ω VGS=-4.5V, ID=-5A 44 58 m Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VGS=0V,VDS=-15V,f=1.0MHz 920 pF Output Capacitance C OSS 190 pF Reverse Transfer Capacitance C RSS 122 pF SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) t D(ON) VDS=-15V, VGS=-10V, RG=3Ω, RL=2.7Ω 7.7 ns Turn-ON Rise Time t R 5.7 ns Turn-OFF Delay Time t D(OFF) 20.2 ns Turn-OFF Fall Time t F 9.5 ns Total Gate Charge (Note2) Q G VDS=-15V, VGS=-10V, ID=-6A 18.5 nC Gate-Source Charge Q GS 2.7 nC Gate-Drain Charge Q GD 4.5 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) V SD I S=-1A, VGS=0V -0.76 -1 V Diode Continuous Forward Current (Note3) I S -4.2 A Reverse Recovery Time t RR IDS=-6A, dI/dt=100A/μs 20 ns Reverse Recovery Charge Q RR 8.8 nC Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300µs, duty cycle ≤2%. 3. Surface Mounted on 1in 2 pad area, t≤10sec.
UNISONIC TECHNOLOGIES CO., LTD 6 of 10 www.unisonic.com.tw QW-R211-021.B TYPICAL CHARACTERISTICS N-CHANNEL Drain Current,ID (A) Drain Current,ID (A) Capacitance (pF) Drain to Source On- Resistance,RDS(ON) (mΩ) Gate to Source Voltage,VGS (V) 25℃ ID=5A 125℃ 246 8 1 0 On-Resistance vs. Gate-Source Voltage 25℃ 125℃ 1.0E-05 1.0E+00 1.0E+01 1.0E-04 1.0E-03 1.0E-02 1.0E-01 Body Diode Characteristics Body Diode Forward Voltage,VSD (V)
UNISONIC TECHNOLOGIES CO., LTD 7 of 10 www.unisonic.com.tw QW-R211-021.B TYPICAL CHARACTERISTICS(Cont.) Gate to Source Voltage,VGS (V) VDS=15V ID=6.9A 0246 81 0 12 14 Gate- Charge Characteristics TJ(Max)=150℃ TA=25℃ 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Power (W) Single Pulse Power Rating Junction- to-Ambient Gate Charge,QG (nC) Drain Current,ID (A) Normalized Transient Thermal Resistance,ZθJA
UNISONIC TECHNOLOGIES CO., LTD 8 of 10 www.unisonic.com.tw QW-R211-021.B TYPICAL CHARACTERISTICS(Cont.) P-CHANNEL Drain Current,-ID (A) Drain to Source Voltage,-VDS (V) Gate to Source Voltage,-VGS (V) 125℃ 25℃ VDS=-5V Transfer Characteristics -4V -4.5V -5V -6V -10V -3.5V VGS=-3V 0 1 23 4 5 On-Region Characteristics Drain Current,-ID (A) Drain to Source Voltage,-VDS (V)Drain Current,-ID (A) VGS=-10V VGS=-4.5V 0 5 10 15 20 25 On-Resistance vs. Drain Current and Gate Voltage CISS COSS CRSS 1500 1250 1000 750 500 250 0 5 10 15 20 25 30 Capacitance (pF) Capacitance Characteristics Drain to Source On- Resistance,RDS(ON) (mΩ) Drain to Source On- Resistance,RDS(ON) (mΩ) Reverse Drain Current,-IS (A)
UNISONIC TECHNOLOGIES CO., LTD 9 of 10 www.unisonic.com.tw QW-R211-021.B TYPICAL CHARACTERISTICS(Cont.) Gate to Source Voltage,-VGS (V) TJ(Max)=150℃ TA=25℃ 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Power (W) Single Pulse Power Rating Junction- to-Ambient VDS=-15V ID=-6A 048 12 16 20 Gate-Charge Characteristics Gate Charge,-QG (nC) Drain to Source Voltage,-VDS (V) Drain Current,-ID (A) 10μs100μs 1ms 10ms 0.1s 10sDC RDS(ON) Limited TJ(Max)=150℃ TA=25℃ 100.0 10.0 1.0 0.1 0.1 1 10 100 Maximum Forward Biased Safe Operating Area Single Pulse 0.1 0.01 Pulse Width (s) Normalized Maximum Transient Thermal Impedance Normalized Transient Thermal Resistance,ZθJA In descending order 02,0.01,single pulse D=TON/T TJ,PK=TA+PDM.Z θJA.RθJA RθJA=62.5℃/W PD TON T
UNISONIC TECHNOLOGIES CO., LTD 10 of 10 www.unisonic.com.tw QW-R211-021.B TYPICAL CHARACTERISTICS(Cont.) For N / P-CHANNEL 05 0 1 0 0 100Power Derating (%) Ambient Temperature, TA ( C) Power Derating 150 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.