UD3KB100 ASEMI | Alldatasheet
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J unction High Current Capability High Reliability Mechanical D a ta Moun ting Pos ition: Any Marking: Type Number D3K All Di m ensions in mm Ter m inals: Plated Leads Solderable per VOLTAGE RANG 50 to 1000 Volts V Maximum Ra t ings and Electrical Characteristics A =25°C unl ess otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol UD3K B05 Unit Peak Repet itive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 50 100 200 400 600 800 1000 V RMS Revers e Voltage V R(RMS) 35 70 140 280 420 560 700 V Av erage Rec tified Output Current ( N o t e 1 ) @ T A = 50°C I O 3.0 A Non-Repet i t ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM A Forward Vol t age (per element) @I F FM 1.05 V P e a k R e v e r s e C u r r e n t @ T A = 25° C A t Rated DC Blocking Voltage @T A = 100°C I RM 500 µA Ty pi cal Thermal Resistance (Note 3) R /G01 JA W Operat i ng and S torage Temperature Range T T STG -55 t o +150 C Not Leads maintained at ambient temperature at a distance of 9.5mm from the case. 3. Thermal resistance junction to ambient mounted on PC board with 12mm copper pad. UD3K B10 UD3K B20 UD3K B40 UD3K B60 UD3K B80 UD3K B100 ASEMI Bridge Rectifier Component Index, file number SZXEC1902259902 This series is SGS listed under the Recognized
www.asemi99.com 2018.11 Rev.3.1 Rating and Characteristic Curves ( TA=25 Unless otherwise noted ) C o UD3KB05 THRU UD3KB100 CURRENT 3.0 Ampere VOLTAGE RANG 50 to 1000 Volts 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I , INSTANTANEOUS FWD CURRENT (A) F V , INST A NTANEOUS FWD VOLTAGE (V) Fig. 2 T ypical Fwd Characteristics F T = 150°C J T = 25°C J Pulse W idth = 300 µs 100 100 I , PEAK FWD SURGE CURRENT (A) FSM NUM B ER OF CYCLES AT 60 Hz Fi g . 3 M a x Non-Repetitive P eak Fwd Sur g e Curre n t T = 150 c Single Half Sine Wave (JEDEC Method) j 100 0 1 C , JUNCTION CAPACITANCE (pF) j V , REVERSE VOLT AGE (V) Fig . 4 Typical Junction Capacitance R T = 25°C f 1MHz j 0.01 0.1 1.0 100 1000 10,000 0 20 40 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TE D PEAK REVERSE VOLTAGE (%) Fi g . 5 Typical Reverse Characteristi cs T = 125°C j T = 100°C j T 25°C j T = 150°C j 1.0 2.0 3.0 0 75 150 225 I , AVERAGE RECTIFIED CURRENT (A) O T, TE MP ERATURE (°C) Fi g . 1 Forward Current Deratin g Curve ASEMI Bridge Rectifier