UD2KB05_V01 ZSELEC | Alldatasheet
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ad Free: For RoHS / Lead Free Version UD2KB05 – UD2KB100 MIL-ST D-202, Method 208MIL-STD-202, Method 208 Weight: 1.7 grams (approx.) P o l a r i t y : A s M a r k e d o n B o d y I d e a l f o r P r i n t e d C i r c u i t B o a r d s H i g h S u r g e C u r r e n t C a p a b i l i t y L o w F o r w a r d V o l t a g e D r o p C a s e : M o l d e d P l a s t i c 2.0 A BRIDGE RECTIFIER Feat ures ! Diff used Junction ! High Current Capability ! High Reliability M echanical Data ! Moun ting Pos ition: Any ! Marking: Type Number M aximum Ra tings and Electrical Characteristics @T A=2 5°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol UD2K B05 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR( RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current ( N o t e 1 ) @ TA = 50°C IO 2. 0 A Non-Repetit ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M 50 A Forward Voltage (per element) @IF = 2.0A V FM P e ak R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 500 µA Typical Thermal Resistance (Note 3) R /G01JA 35 K/W Operating and S torage Temperature Range Tj, TST G -55 to +150 °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. 3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad. 1 of 2 Z ibo Seno Electronic Engineering Co., Ltd. Terminals: Plated Leads Solderable per UD2K B10 UD2K B20 UD2K B40 UD2K B60 UD2K B80 UD2K B100 www.senocn.com UD2KB05 – UD2KB100 V1.0 D3K D3K Dim Min Max A 13.5 14.6 B 3.00 3.60 C 10.2 D 13.0 14.4 E 2.20 F 6.70 7.30 G 3.51 H 0.30 0.55 I 1.20 /c198 1.42 /c198 J 0.66 0.86 O 1.80 2.40 P 3.00 All Dimensions in mm 1.20 11.0 4.11 3.40
0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I , INST ANTANEOUS FWD CURRENT (A) F V , INSTA NTANEOUS FWD VOLTAGE (V) Fig. 2 T ypical Fwd Characteristics F T = 150°CJ T = 25°CJ Pulse W idth = 300 µs 100 1 10 100 I , P EAK FWD SURGE CURRENT (A) FSM NUM B ER OF CYCLES AT 60 Hz Fig. 3 Ma x Non-Repetitive P eak Fwd Surge Curren t T = 150° c Single Half Sine Wave (JEDEC Method) j 100 11 0 1 00 C , JUNCTION CAP ACITANCE (pF) j V , REVERSE VOLT AGE (V) Fig . 4 Typical Junction Capacitance R T = 25°C 1MHz j 0.01 0.1 1.0 100 1000 10,000 0 20 40 60 80 100 120 140 I , INST ANT ANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TE D PEAK REVERSE VOLTAGE (%) Fig. 5 TypicalReverse Characteristi cs T = 125°Cj T = 100°Cj T = 25°Cj T = 150°Cj 1.0 2.0 3.0 0 75 150 225 I , A VERAGE RECTIFIED CURRENT (A) O T, TEMP ERATURE (°C) Fig. 1 ForwardCurrent Derating Curve 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. UD2KB05 – UD2KB100 www.senocn.com UD2KB05 – UD2KB100