U62H64 ZMD | Alldatasheet
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April 20, 2004 1 U62H64 The U62H64 is a static RAM manu- factured using a CMOS process technology with the following ope- rating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell. The circuit is activated by the rising edge of E2 (at E1 = L), or the falling edge of E1 (at E2 = H). The address and control inputs open simultaneously. According to the information of W and G, the data inputs, or outputs, are active. In a Read cycle, the data outputs are activated by the falling edge of G , afterwards the data word read will be available at the outputs DQ0 - DQ7. After the address change, the data outputs go High-Z until the new read infor- mation is available. The data out- puts have no preferred state. If the memory is driven by CMOS levels in the active state, and if there is no change of the address, data input and control signals W or G , the operating current (at I O = 0 mA) drops to the value of the operating current in the Standby mode. The Read cycle is finis hed by the falling edge of E2 or W , or by the rising edge of E1, respectively. Data retention is guaranteed down to 2 V. With the exception of E1 and E2, all inputs consist of NOR gates, so that no pull-up/pull-down resistors are required. This gate circuit allows to achieve low power standby requirements by activation with TTL-levels too. ! Fast 8192 x 8 bit static CMOS RAM ! 35 ns Access Time ! Bidirectional data inputs and data outputs ! Three-state outputs ! Data retention mode at Vcc > 2V ! Data retention current at 2 V: < 3 µA (K-Type) < 50 µA (A-Type) ! Standby current < 5 µA (K-Type) < 100 µA (A-Type) ! TTL/CMOS-compatible ! Automatic reduction of power dissipation in long Read or Write cycles ! Power supply voltage 5 V ! Operating temperature ranges -40 to 85 °C -40 to 125 °C ! QS 9000 Quality Standard ! ESD protection > 2000 V (MIL STD 883C M3015.7) ! Latch-up immunity > 200 mA ! Package: SOP28 (300 mil) Pin Description Signal Name Signal Description A0 - A12 Address Inputs DQ0 - DQ7 Data In/Out E1 Chip Enable 1 E2 Chip Enable 2 G Output Enable W Write Enable VCC Power Supply Voltage VSS Ground n.c. not connected Pin Configuration 1n.c. VCC28 2A12 W (WE)27 4A6 A825 5A5 A924 3A7 E2 (CE2)26 6A4 A1123 7A3 G (OE)22 8A2 A1021 12DQ1 DQ517 9A1 E1 (CE1)20 10A0 DQ719 11DQ0 DQ618 13DQ2 DQ416 14VSS DQ315 SOP Top View Automotive Fast 8K x 8 SRAM Features Description
April 20, 20042 U62H64 Block Diagram * H or L Operating Mode E1 E2 W G DQ0 - DQ7 Standby/not selected * L * * High-Z H * * * High-Z Internal Read L H H H High-Z Read L H H L Data Outputs Low-Z Write L H L * Data Inputs High-Z Truth Table Memory Cell Array
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April 20, 2004 3 U62H64 a Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at condition above those indicated in the operational sections of this specificati on is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability b Maximum voltage is 7 V c Not more than 1 output should be shorted at the same time. Duration of the short circuit should not exceed 30 s. Absolute Maximum Ratings a Symbol Min. Max. Unit Power Supply Voltage V CC -0.3 7 V Input Voltage V I -0.3 V CC + 0.5 b V Output Voltage V O -0.3 V CC + 0.5 b V Operating Temperature K-Type A-Type Ta -40 -40 125 Storage Temperature T stg -65 150 °C Output Short-Circuit Current at VCC = 5 V and VO = 0 V c |IOS|2 0 0 m A Characteristics All voltages are referenced to VSS = 0 V (ground). All characteristics are valid in the power supply voltage range and in the operating temperature range specified. Dynamic measurements are based on a rise and fall time of ≤ 5 ns, measured between 10 % and 90 % of V I,a s w e l l a s input levels of VIL = 0 V and VIH = 3 V. The timing reference level of all input and output signals is 1.5 V, with the exception of the tdis-times and ten-times, in which cases transition is measured ± 200 mV from steady-state voltage. d -2 V at Pulse Width 10 ns or -1 V at Pulse Width 50 ns Recommended Operating Conditions Symbol Conditions Min. Max. Unit Power Supply Voltage V CC 4.5 5.5 V Data Retention Voltage V CC(DR) 2.0 - V Input Low Voltage d VIL -0.3 0.8 V Input High Voltage V IH 2.2 V CC + 0.3 V
April 20, 20044 U62H64 Electrical Characteristics Symbol Conditions Min. Max. Unit Supply Current - Operating Mode Supply Current - Standby Mode (CMOS level) Supply Current - Standby Mode (TTL level) Supply Current - Data Retention Mode ICC(OP) ICC(SB) ICC(SB)1 ICC(DR) VCC VIL VIH tcW VCC VE1 = VE2 K-Type A-Type VCC VE1 = VE2 VCC(DR) VE1 = VE2 K-Type A-Type = 5.5 V = 0.8 V = 2.2 V =3 5 n s = 5.5 V = V CC - 0.2 V = 5.5 V = 2.2 V = 2.0 V = VCC(DR) - 0.2 V 100 (typ. 2) mA µA µA mA µA µA Output High Voltage Output Low Voltage VOH VOL VCC IOH VCC IOL = 4.5 V = -4.0 mA = 4.5 V = 8 . 0 m A 2.4 0.4 V V Output High Current Output Low Current I OH IOL VCC VOH VCC VOL = 4.5 V = 2 . 4 V = 4 . 5 V = 0.4 V 8.0 -4.0 mA mA Input High Leakage Current Input Low Leakage Current I IH IIL VCC VIH VCC VIL = 5 . 5 V = 5.5 V = 5.5 V = 0 V µA µA Output Leakage Current High at Three-State Outputs Low at Three-State Outputs I OHZ IOLZ VCC VOH VCC VOL = 5.5 V = 5 . 5 V = 5.5 V = 0 V µA µA
April 20, 2004 5 U62H64 Switching Characteristics Symbol Min. Max. Unit Alt. IEC Time to Output in Low-Z from E1 LOW or E2 HIGH G LOW W HIGH tLZCE tLZOE tLZWE ten(E) ten(G) ten(W) ns ns ns Cycle Time Write Cycle Time Read Cycle Time t WC tRC tcW tcR ns ns Access Time E1 LOW or E2 HIGH to Data Valid G LOW to Data Valid Address to Data Valid tACE tOE tAA ta(E) ta(G) ta(A) ns ns ns Pulse Widths Write Pulse Width Chip Enable to End of Write t WP tCW tw(W) tw(E) ns ns Setup Times Address Setup Time Chip Enable to End of Write Write Pulse Width Data Setup Time t AS tCW tWP tDS tsu(A) tsu(E) tsu(W) tsu(D) ns ns ns ns Data Hold Time Address Hold from End of Write t DH tAH th(D) th(A) ns ns Output Hold Time from Address Change t OH tv(A) 5n s E1 HIGH or E2 LOW to Output in High-Z W LOW to Output in High-Z G HIGH to Output in High-Z tHZCE tHZWE tHZOE tdis(E) tdis(W) tdis(G) ns ns ns LOW or E2 HIGH to Power-Up t PU 0n s E1 HIGH or E2 LOW to Power-Down t PD 35 ns Data Retention Mode E1 -Controlled 4.5 V VCC VCC(DR) ≥ 2 V VE2(DR) ≥ VCC(DR) - 0.2 V or VE2(DR) ≤ 0.2 V VCC(DR) - 0.2 V ≤ VE1(DR) ≤ VCC(DR) + 0.3 V 0 V trectDR Data Retention 2.2 V2.2 V Data Retention Mode E2-Controlled 0.8 V0.8 V 4.5 V 0 V VCC VE1(DR) ≥ VCC(DR) - 0.2 V or VE1(DR) ≤ 0.2 V VE2(DR) ≤ 0.2 V trectDR VCC(DR) ≥ 2 V Data Retention Chip Deselect to Data Retention Time t DR: min 0 ns Operating Recovery Time at V CC(DR) trec: min t cR
April 20, 20046 U62H64 Test Configuration for Functional Check VIH VIL VSS VCC 5 V 481 255 30 pF e VO Input level according to the relevant test measurement Simultaneous measure- ment of all 8 output pins A10 A11 A12 W G DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 e In measurement of tdis(E), tdis(W), tdis(G), ten(E), ten(W), ten(G) the capacitance is 5 pF . All pins not under test must be connected with ground by capacitors. Capacitance Conditions Symbol Min. Max. Unit Input Capacitance VCC = 5.0 V VI = V SS CI 8p F Output Capacitance f = 1 MHz Ta = 25 °C CO 10 pF Date of manufacture (The first 2 digits indicating the year, and the last 2 digits the calendar week.) Leadfree Green Package Product specification Assembly location and trace code Internal Code Ordering Code Device Marking (example) ZMD U62H64SK 35L C 0425
1 ZZ G1
35 = 35 ns LS 35KU62H64 Type Package S = SOP28 (300 mil) Operating Temperature Range K = -40 to 85 °C A = -40 to 125 °C Leadfree Option blank = Standard Package G1 = Leadfree Green Package f Power Consumption blank = Standard (only A-Type) L = Low Power (only K-Type) f on special request Example
April 20, 2004 7 U62H64 Input Data Valid Output Data Valid Previous Data Valid tcR High-Z Addresses Valid Read Cycle 2 (during Read cycle: W = VIH, G-, E1- or E2-controlled) Ai G DQi Output tdis(E) tsu(A) ta(E) tsu(A) ten(E) ten(E) ten(G) ta(G) ta(E) tdis(E) tdis(G) tPD *tPU ICC(OP) ICC(SB) th(D) Read Cycle 1 (during Read cycle: E1 = G = VIL, E2 = W = VIH, Ai-controlled) Write Cycle 1 (W-controlled) ta(A) Output Data Valid tcR Addresses Valid tv(A) Ai DQi Output Ai W DQi G DQi Output tcW tsu(E) th(A) tw(W)tsu(A) tsu(E) tsu(D) tdis(W) ten(W) Addresses Valid High-Z Input * The same applies to E1 50 % 50 %
April 20, 20048 U62H64 High-Z Input Data Valid th(D) tsu(W) tw(E) tsu(D) tcW Addresses Valid tsu(A) tsu(E) th(A) ten(E) tdis(W) Ai W DQi Input G DQi Output tsu(A) undefined L- or H-level Write Cycle 2 (E1-controlled) Write Cycle 3 (E2-controlled) th(D) Ai W DQi Input G DQi Output tcW tw(E) th(A) tsu(W) tsu(E) tsu(D) tdis(W)ten(E) Addresses Valid Input Data Valid High-Z The information describes the type of component and shall not be considered as assured characteristic. Terms of delivery and rights to change design reserved.
Zentrum Mikroelektronik Dresden AG Grenzstraße 28 • D-01109 Dresden • P. O. B. 80 01 34 • D-01101 Dresden • Germany Phone: +49 351 8822 306 • Fax: +49 351 8822 337 • Email: memory@zmd.de • http://www.zmd.de April 20, 2004 U62H64 LIFE SUPPORT POLICY ZMD products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the ZMD product could create a situation where personal injury or death may occur. Components used in life-support devices or systems must be expressly authorized by ZMD for such purpose. LIMITED WARRANTY The information in this document has been carefully checked and is believed to be reliable. However Zentrum Mikroelektronik Dresden AG (ZMD) makes no guarantee or warranty concerning the accuracy of said information and shall not be responsible for any loss or damage of whatever nature resulting from the use of, or reliance upon it. The information in this document describes the type of component and shall not be considered as assured charac- teristics. ZMD does not guarantee that the use of any information contained herein will not infringe upon the patent, trade- mark, copyright, mask work right or other rights of third parties, and no patent or licence is implied hereby. This document does not in any way extent ZMDs warranty on any product beyond that set forth in its standard terms and conditions of sale. ZMD reserves terms of delivery and reserves the right to make changes in the products or specifications, or both, presented in this publication at any time and without notice.