U440 LINEAR | Alldatasheet
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Technical content
FEATURES
Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +135 °C Maximum Power Dissipation Continuous Power Dissipation (Total) 500mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -25V Gate to Source -25V Gate to Gate ±50V MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS U/SST440 10 GS2GS1 VV − Differential Gate to Source Cutoff Voltage U/SST441 20 mV VDG = 10V, ID = 5mA VV∆ GS2GS1 − Differential Gate to Source Cutoff Voltage Change with Temperature 20 µV/°C VDG = 10V, ID = 5mA TA = -55 to +125°C DSS2 DSS1 I I Gate to Source Saturation Current Ratio 0.07 VDS = 10V, VGS = 0V fs2 fs1 g g Forward Transconductance Ratio2 0.97 VDS = 10V, ID = 5mA, f = 1kHz CMRR Common Mode Rejection Ratio 85 dB VDG = 5 to 10V, ID = 5mA ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage -25 V IG = -1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage -1 -3.5 -6 V VDS = 10V, ID = 1nA IDSS Gate to Source Saturation Current3 6 15 30 mA VDS = 10V, VGS = 0V IGSS Gate Leakage Current -1 -500 VGS = -15V, VDS = 0V IG Gate Operating Current -1 -500 pA VDG = 10V, ID = 5mA SST SERIES SOIC NC NC U SERIES BOTTOM VIEW TO -71 Linear Integrated Systems U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 ELECTRICAL CHARACTERISTICS CONTINUED @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS gfs Forward Transconductance 4.5 6 9 mS gos Output Conductance 70 200 µS VDS = 10V, ID = 5mA, f = 1kHz Ciss Input Capacitance 3 Crss Reverse Transfer Capacitance 1 pF VDS = 10V, ID = 5mA, f = 1MHz en Equivalent Input Noise Voltage 4 nV/√Hz VDS = 10V, ID = 5mA, f = 10kHz 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio otherwise under any patent or patent rights of Linear Integrated Systems. n or SOIC DIMENSIONS IN INCHES 0.2284 0.2440 0.189 0.196 0.0075 0.0098 0.021 0.014 0.018 0.050 0.0040 0.0098 0.150 0.157 TO-71 Six Lead 0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.
6 LEADS
0.046 0.036 45° 0.048 0.028 0.100 0.050