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Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201124 07/24/2019 Rev#A14 ECN# U421 U422 U423 U424 U425 U426

FEATURES

HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µS MIN LOW POWER OPERATION VGS(off)=2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise noted) Maximum Temperatures Storage Temperature -55 to +150°C Operating Junction Temperature -55 to +150°C Maximum Voltage and Current for Each Transistor NOTE 1 -VGSS Gate Voltage to Drain or Source 40V -VDSO Drain to Source Voltage 40V IG(f) Gate Forward Current 10mA Maximum Power Dissipation Total Device Dissipation TA = 25ºC 5002 mW ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC3 U421 U422 U423 U424 U425 U426 UNITS CONDITIONS │∆VGS1-2/∆T│max. Drift vs. Temperature 10 25 40 10 25 40 µV/ºC VDG = 10V ID = 30µA TA = -55ºC to +125ºC │VGS1-2│max. Offset Voltage 10 15 25 10 15 25 mV VDG =10V ID = 30µA GATE VOLTAGE IGTYP. High Temperature -250 -250 -250 -500 -500 -500 pA TA=+125ºC SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNITS CONDITIONS BVGSS Breakdown Voltage -40 -60 -- V VDS= 0V IG= -1nA BVGGO Gate-to-Gate Breakdown ±40 -- -- V IG1G2= ±1µA ID= 0A IS= 0A TRANSCONDUCTANCE gfs Full Conduction 300 -- 1500 µS VDS= 10V VGS= 0 f = 1kHz gfs Typical Operation 120 200 350 µS VDG= 10V ID= 30µA f = 1kHz DRAIN CURRENT 60 -- 1000 µA U421-3 VDS= 10V VGS= 0 IDSS Full Conduction 60 -- 1800 µA U424-6 SOIC TOP VIEW TO-78 TOP VIEW Case & Substrate U421, U422, U423, U424, U425, U426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201124 07/24/2019 Rev#A14 ECN# U421 U422 U423 U424 U425 U426 SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNITS CONDITIONS OUTPUT CONDUCTANCE gos Full Conduction -- -- 10 µS VDS= 10V VGS= 0 gos Operating -- 0.1 3.0 µS VDG= 10V ID= 30µA COMMON MODE REJECTION CMRR -20 log │V GS1-2/ΔVDS│ -- 90 -- dB ΔVDS= 10 to 20V ID=30µA CMRR -20 log │V GS1-2/ΔVDS│ -- 90 -- dB ΔVDS= 5 to 10V ID=30µA NOISE NF Figure -- -- 1.0 dB VDG= 10V, ID= 30µA, RG=10MΩ f= 10Hz en Voltage -- 20 70 nV/√Hz VDG= 10V ID= 30µA f= 10Hz

10 VDG= 10V ID= 30µA f= 1kHz

CISS Input -- -- 3.0 pF VDS= 10V VGS= 0 f= 1MHz CRSS Reverse Transfer -- -- 1.5 pF VDS= 10V VGS= 0 f= 1MHz TO-78 0.335 0.3700.305 0.335 0.016 0.019 0.165 0.185 0.040 MAX. DIM. A 0.016 0.021 DIM. B MIN. 0.500 0.200 0.100 0.100 0.028 0.034 45° 2 3 0.029 0.045 SEATING PLANE TO-71 Six Lead 0.230 0.209 DIA. DIA.0.195 0.175 0.030 MAX. 0.500 MIN. 0.150 0.115 0.019 0.016 DIA.

6 LEADS

0.046 0.036 45° 0.048 0.028 0.100 0.050 NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired 2. Derate 4mW/ºC above 25ºC 3. All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. 0.210 0.170 Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Linear Systems, founded in 1987, uses patented and proprietary processes and designs to create its high performance discrete semiconductors. Expertise brought to the company is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company founder John H. Hall. TO-71 TO-78 P-DIP SOIC Note: All Dimensions in inches 0.150 (3.81) 0.158 (4.01) 0.188 (4.78) 0.197 (5.00) 0.228 (5.79) 0.244 (6.20)