3GWJ2C42 TOSHIBA | Alldatasheet

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TOSHIBA 3GWJ2C42,U3GWJ2C42 TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 3GWJ2C42, U3GWJ2C42 SWITCHING TYPE POWER SUPPLY APPLICATION Unit in mm CONVERTER & CHOPPER APPLICATION 3GWJ2042 Zz sswax_ § e@ Average Output Rectified Current : I9=3A $2402 | «| _0.6MAX e@ Repetitive Peak Reverse Voltage : VRRM=40V ionemma @ Low Switching Losses and Output Noise. | | 3 06+0.15 Ty] | POLARITY MARKING 0.95Max_ ff j z @ Lot Number . 1 =] 4p-osMas [Month s\\s| 9 9 9 0 ® D a (Starting from Alphabet A)}] 3] * 3GWJ2 ba Year fe 2 1. ANODE ii]) Last Number of the Christian Era) 2. ANODE Tv UU 3. CATHODE JEDEC _- CHARACTERISTIC TOSHIBA 12-7B1A Repetitive Peak Reverse Voltage | Vrrm | 40 | V_ || UsGwWJ2c42 Average Output Rectified Current [| Io [| 3 | A | x Peak One Cycle Surge Forward I 15 (50Hz) A SAMA 3} cemaax Current (Sine Wave) FSM [16.5 (60Hz) ee Junction Temperature —40~125 aI ~ st a ELECTRICAL CHARACTERISTICS (Ta = 25°C) ossmax.{_ || ~ a CHARACTERISTIC sr conprtion|TyP. max untr] | 2") pili ee 6202 Peak Forward Bl Si een [vow fein | — [os] | _ Repetitive Peak nz Hi) 2. ANODE Reverse Current VRRM=40V 2.0 | mA 3. CATHODE Functi Capac VR=i0V, JEDEC — function Capacitance] ‘R=10V, i: TOSHIBA 12-7B2A Thermal Resistance Rih Gc) | DC 7 kovwi ‘ (Junction to Case) Weight : 0.55 Thermal Resistance . DC (250mm 6 (Junction to Ambient) th (a) | + 0.8mm Ceramic) | — | 125 for] Note 1: A value of one cell. Q61001EAA2 malfunction or fail du¢ to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your, designs, please ensure that TOSHIBA. products are, used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1998-03-04 1/3

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