U2703

IRLR2703 IRF | Alldatasheet

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/G73/G82/G76/G82/G47/G85/G50/G55/G48/G51 /G72/G69/G88/G70/G69/G84/G174/G32/G80/G111/G119/G101/G114/G32/G77/G79/G83/G70/G69/G84 S D G Parameter Typ. Max. Units R θJC Junction-to-Case ––– 3.3 R θJA Case-to-Ambient (PCB mount)** ––– 50 °C/W R θJA Junction-to-Ambient ––– 110 Thermal Resistance VDSS = 30V R DS(on) = 0.045Ω ID = 23A/G133 /G68/G101/G115/G99/G114/G105/G112/G116/G105/G111/G110 7/30/03 www.irf.com 1 D-Pak TO-252AA I-Pak TO-251AA /G108Logic-Level Gate Drive /G108Ultra Low On-Resistance /G108Surface Mount (IRLR2703) /G108Straight Lead (IRLU2703) /G108Advanced Process Technology /G108Fast Switching /G108Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. /G32/G42/G42/G32/G32/G32/G87/G104/G101/G110/G32/G109/G111/G117/G110/G116/G101/G100/G32/G111/G110/G32/G49/G34/G32/G115/G113/G117/G97/G114/G101/G32/G80/G67/G66/G32/G40/G70/G82/G45/G52/G32/G111/G114/G32/G71/G45/G49/G48/G32/G77/G97/G116/G101/G114/G105/G97/G108/G32/G41/G32/G46._ /G32/G32/G32/G32/G32/G32/G32/G70/G111/G114/G32/G114/G101/G99/G111/G109/G109/G101/G110/G100/G101/G100/G32/G102/G111/G111/G116/G112/G114/G105/G110/G116/G32/G97/G110/G100/G32/G115/G111/G108/G100/G101/G114/G105/G110/G103/G32/G116/G101/G99/G104/G110/G105/G113/G117/G101/G115/G32/G114/G101/G102/G101/G114/G32/G116/G111/G32/G97/G112/G112/G108/G105/G99/G97/G116/G105/G111/G110/G32/G110/G111/G116/G101/G32/G35/G65/G78/G45/G57/G57/G52 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23 /G133 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 16 A IDM Pulsed Drain Current /G129 96 PD @T C = 25°C Power Dissipation 45 W Linear Derating Factor 0.30 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy/G130 77 mJ IAR Avalanche Current/G129 14 A EAR Repetitive Avalanche Energy/G129 4.5 mJ dv/dt Peak Diode Recovery dv/dt /G131 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) /G65/G98/G115/G111/G108/G117/G116/G101/G32/G77/G97/G120/G105/G109/G117/G109/G32/G82/G97/G116/G105/G110/G103/G115 /G80/G68/G45/G32/G57/G49/G51/G51/G53/G68

/G73/G82/G76/G82/G47/G85/G50/G55/G48/G51 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) /G129 ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 14A, VGS = 0V/G32/G132 trr Reverse Recovery Time ––– 65 97 ns T J = 25°C, IF = 14A Q rr Reverse RecoveryCharge ––– 140 210 nC di/dt = 100A/µs /G32/G132/G135 ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD ) Source-Drain Ratings and Characteristics 23 /G133 /G65 /G130 VDD = 15V, starting TJ = 25°C, L =570µH RG = 25Ω, IAS = 14A. (See Figure 12) /G129/G32Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) /G132 Pulse width ≤ 300µs; duty cycle ≤ 2%. /G134 This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. /G135 Uses IRL2703 data and test conditions./G131ISD ≤ 14A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS , TJ ≤ 175°C Notes: /G133/G32Caculated continuous current based on maximum allowable junction temperature; Package limitation current = 20A. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V V GS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––0.030 ––– V/°C Reference to 25°C, ID = 1mA VGS(th) Gate Threshold Voltage 1.0 ––– ––– V V DS = VGS , ID = 250µA gfs Forward Transconductance 6.4 ––– ––– S V DS = 25V, ID = 14A/G135 ––– ––– 25 µA VDS = 30V, VGS = 0V ––– ––– 250 V DS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 V GS = -16V Q g Total Gate Charge ––– ––– 15 I D = 14A Q gs Gate-to-Source Charge ––– ––– 4.6 nC V DS = 24V Q gd Gate-to-Drain ("Miller") Charge ––– ––– 9.3 V GS = 4.5V, See Fig. 6 and 13 /G132/G135 td(on) Turn-On Delay Time ––– 8.5 ––– V DD = 15V tr Rise Time ––– 140 ––– ns ID = 14A td(off) Turn-Off Delay Time ––– 12 ––– R G = 12Ω, VGS = 4.5V tf Fall Time ––– 20 ––– R D = 1.0Ω, See Fig. 10/G32/G132/G135 Between lead, 6mm (0.25in.) from package and center of die contact/G134 C iss Input Capacitance ––– 450 ––– V GS = 0V C oss Output Capacitance ––– 210 ––– pF V DS = 25V C rss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz, See Fig. 5 /G135 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH IGSS S D G LS Internal Source Inductance ––– 7.5 ––– RDS(on) Static Drain-to-Source On-Resistance LD Internal Drain Inductance ––– /G32 4.5/G32/G32/G32 ––– IDSS Drain-to-Source Leakage Current Ω

/G73/G82/G76/G82/G47/G85/G50/G55/G48/G51 www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.1 100 1000 0.1 1 10 100 I , Drain-to-Source Current (A)D V , Drain-to-Source Voltage (V)DS A 20µs PULSE WIDTH T = 25°CJ VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 0.1 100 1000 0.1 1 10 100 I , Drain-to-Source Current (A)D V , Drain-to-Source Voltage (V)DS A 20µs PULSE WIDTH T = 175°C VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V J 0.1 100 23456789 1 0 T = 25°CJ GSV , Gate-to-Source Voltage (V) DI , Drain-to-Source Current (A) T = 175°CJ A V = 15V 20µs PULSE WIDTH DS 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 JT , Junction Temperature (°C) R , Drain-to-Source On ResistanceDS(on) (Normalized) V = 10VGS A I = 24AD /G50/G51/G65

/G73/G82/G76/G82/G47/G85/G50/G55/G48/G51 4 www.irf.com Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage /G70/G105/G103/G32/G56/G46._/G32/G32/G77/G97/G120/G105/G109/G117/G109/G32/G83/G97/G102/G101/G32/G79/G112/G101/G114/G97/G116/G105/G110/G103/G32/G65/G114/G101/G97 200 400 600 800 1000 1 10 100 C, Capacitance (pF) DSV , Drain-to-Source Voltage (V) A V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd C iss C oss C rss 048 1 2 1 6 2 0 Q , Total Gate Charge (nC)G V , Gate-to-Source Voltage (V)GS A FOR TEST CIRCUIT SEE FIGURE 13 V = 24V V = 15V I = 14A DS DS D 100 T = 25°CJ V = 0VGS V , Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD A T = 175°CJ 100 1000 1 10 100 V , Drain-to-Source Voltage (V)DS I , Drain Current (A) OPERATION IN THIS AREA LIMITED BY R D DS(on) 10µs 100µs 1ms 10ms A T = 25°C T = 175°C Single Pulse C J

/G73/G82/G76/G82/G47/G85/G50/G55/G48/G51 www.irf.com 5 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms /G86/G68/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32≤ 1 /G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32≤ 0.1 % /G82/G68 /G86/G71/G83 /G82/G71 /G52/G46._/G53/G86 -/G86/G68/G68 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 0.01 0.1 t , Rectangular Pulse Duration (sec)1 thJC D = 0.50 0.01 0.02 0.05 0.10 0.20 SINGLE PULSE (THERMAL RESPONSE) A Thermal Response (Z ) P DM Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T J DM thJC C 25 50 75 100 125 150 175 T , Case Temperature( C) I , Drain Current (A) D LIMITED BY PACKAGE

/G73/G82/G76/G82/G47/G85/G50/G55/G48/G51 6 www.irf.com Q G Q GS Q GD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors /G49/G48/G32/G86 Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS R G IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20V 120 160 25 50 75 100 125 150 175 J E , Single Pulse Avalanche Energy (mJ)AS A Starting T , Junction Temperature (°C) V = 15V I TOP 5.7A 9.9A BOTTOM 14A DD D

/G73/G82/G76/G82/G47/G85/G50/G55/G48/G51 www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS =10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period Fig 14. For N-Channel HEXFETS /G42/G32/G86/G71/G83/G32/G61/G32/G53/G86/G32/G102/G111/G114/G32/G76/G111/G103/G105/G99/G32/G76/G101/G118/G101/G108/G32/G68/G101/G118/G105/G99/G101/G115 /G80/G101/G97/G107/G32/G68/G105/G111/G100/G101/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G100/G118/G47/G100/G116/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116 /G131 /G132/G130 /G82/G71 /G86/G68/G68

• /G100/G118/G47/G100/G116/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G82/G71
• /G73/G83/G68/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/G34/G68/G34 /G68/G46._/G85/G46._/G84/G67/G105/G114/G99/G117/G105/G116/G32/G76/G97/G121/G111/G117/G116/G32/G67/G111/G110/G115/G105/G100/G101/G114/G97/G116/G105/G111/G110/G115
• /G32/G76/G111/G119/G32/G83/G116/G114/G97/G121/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32 • /G71/G114/G111/G117/G110/G100/G32/G80/G108/G97/G110/G101 /G32/G32 • /G76/G111/G119/G32/G76/G101/G97/G107/G97/G103/G101/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32/G32/G32/G32/G32/G67/G117/G114/G114/G101/G110/G116/G32/G84/G114/G97/G110/G115/G102/G111/G114/G109/G101/G114 /G129 /G42

/G73/G82/G76/G82/G47/G85/G50/G55/G48/G51 8 www.irf.com /G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 /G84/G79/G45/G50/G53/G50/G65/G65/G32/G79/G117/G116/G108/G105/G110/G101 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32/G97/G114/G101/G32/G115/G104/G111/G119/G110/G32/G105/G110/G32/G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32/G40/G105/G110/G99/G104/G101/G115/G41 /G84/G79/G45/G50/G53/G50/G65/G65/G32/G40/G68/G45/G80/G65/G82/G75/G41 /G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 6.73 (.265) 6.35 (.250) - A - 1 2 3 6.22 (.245) 5.97 (.235) - B - 3X 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B 4.57 (.180) 2.28 (.090) 2X 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) MIN. 0.58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 10.42 (.410) 9.40 (.370) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA.

4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,

SOLDER DIP MAX. +0.16 (.006). INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE EXAMPLE : THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 9U1P FIRST PORTION OF PART NUMBER SECOND PORTION OF PART NUMBER 120 IRFR 9U 1P A

/G73/G82/G76/G82/G47/G85/G50/G55/G48/G51 www.irf.com 9 /G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 /G84/G79/G45/G50/G53/G49/G65/G65/G32/G79/G117/G116/G108/G105/G110/G101 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32/G97/G114/G101/G32/G115/G104/G111/G119/G110/G32/G105/G110/G32/G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32/G40/G105/G110/G99/G104/G101/G115/G41 /G84/G79/G45/G50/G53/G49/G65/G65/G32/G40/G73/G45/G80/G65/G82/G75/G41 /G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 6.73 (.265) 6.35 (.250) - A - 6.22 (.245) 5.97 (.235) - B - 3X 0.89 (.035) 0.64 (.025) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. SOLDER DIP MAX. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE FIRST PORTION OF PART NUMBE R SECOND PORTIO N OF PART NUMBER 120 9U 1P EXAMPLE : THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 9U1P IRFU

/G73/G82/G76/G82/G47/G85/G50/G55/G48/G51 10 www.irf.com WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 7/03 /G84 /G97/G112/G101/G32/G38/G32/G82/G101/G101/G108/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 /G84/G79/G45/G50/G53/G50/G65/G65 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32/G97/G114/G101/G32/G115/G104/G111/G119/G110/G32/G105/G110/G32/G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32/G40/G105/G110/G99/G104/G101/G115/G41 TR 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) TRR TRL NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. OUTLINE CONFORMS TO EIA-481. 16 mm

13 INCH