U1B TAYCHIPST | Alldatasheet
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Technical content
Surface Mount Ultrafast Plastic Rectifier U1B THRU U1D 100V-200V 1.0A Web Site: www.taychipst.com1 of 2
FEATURES
E-mail: sales@taychipst.com MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Mechanical Data
- Oxide planar chip junction Ultrafast recovery time Low forward voltage, low power losses High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Solder dip 260 °C, 40 s Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
- Oxide planar chip junction Ultrafast recovery time Low forward voltage, low power losses High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Solder dip 260 °C, 40 s Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MAXIMUM RATINGS (T A = 25 °C unless otherwise noted) PARAMETER SYMBOL U1B U1C U1D UNIT Device marking code U1B U1C U1D Maximum repetitive peak reverse voltage V RRM 100 150 200 V Maximum average forward rectified current (Fig. 1) I F(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM 30 A Operating junction and storage temperature range T J , T STG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage (1) I F = 0.6 A I F = 1.0 A T A = 25 °C V F 0.82 0.87 0.87 0.92 V I F = 0.6 A I F = 1.0 A T A = 100 °C 0.71 0.76 0.78 0.84 Reverse current (2) rated V R T A = 25 °C T A = 100 °C I R 5.0 100 µA Reverse recovery time I F = 0.5 A, I R = 1.0 A, I rr = 0.25 A T A = 25 °C t rr -1 5 n s I F = 0.6 A, dI/dt = 50 A/µs, V R = 30 V, I rr = 0.1 I RM T A = 25 °C T A = 100 °C t rr - ns Storage charge I F = 0.6 A, dI/dt = 50 A/µs, V R = 30 V, I rr = 0.1 I RM T A = 25 °C T A = 100 °C Q rr - nC Typical junction capacitance 4.0 V, 1 MHz C J 6.8 - pF