U1620G_18 THINKISEMI | Alldatasheet

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Technical content

U1620G/U1630G/U1640G/U1660G

16.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Pb Rev.08T Features ¬ Latest GPP EPI P/G Technology Good Soft Recovery Characteristics Ideally Suited for Automatic Assembly Low Forward Voltage High Surge Current Capability Low Leakage Current

Applications

Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS/LED SMPS/HID Positive Negative Common Cathode Common Anode Doubler Tandem Polarity Series Tandem Polarity Suffix "RG" Suffix "DG" Suffix "SG"Suffix "G" Maximum Ratings and Electrical Characteristics A =25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol U1620G Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 200 300 400 600 V RMS Reverse Voltage V R(RMS) 140 210 280 420 V Average Rectified Output Current Total Device C = 1 0 0 ° C Per Diode I O 16.0 8.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) I FSM Forward Voltage per diode @I F FM P e a k R e v e r s e C u r r e n t @ T C = 25°C At Rated DC Blocking Voltage @T C = 100°C I RM 5.0 100 µA Reverse Recovery Time (Note 1) t rr Typical Junction Capacitance (Note 2) C J 70 50 pF Thermal Resistance Junction to Ambient (Note 3) Thermal Resistance Junction to Lead (Note 3) R ǀJA R ǀJC 1.5 °C/W Operating and Storage Temperature Range T T STG -55 to +150 °C Note: 1. Measured with I F = 0.5A, I R = 1.0A, I RR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on PCB with minimum recommended pad sizes per diode. Unit : inch (mm) D2PAK/TO-263 Case Case Case Case = 8.0A V 0.98 1.3 1.7 V 150 A nS U1630G U1640G U1660G

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.08T T C , CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 15 30 45 60 75 90 105 120 135 150 3.2 6.4 9.6 12.8 I (AV) , AVERAGE FORWARD RECTIFIED CURRENT (A) Resistive or Inductive Load V F , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 0.1 1.0 100 I F , INSTANTANEOUS FORWARD CURRENT (A) NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve 10 100 120 150 I FSM , PEAK FORWARD SURGE CURRENT (A) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics 20 40 60 80 100 120 140 0.01 0.1 1.0 100 1000 I R , INSTANTANEOUS REVERSE CURRENT (µA) Single Half-Sine-Wave JEDEC Method 0.1 V R , DC REVERSE VOLTAGE (V) Fig. 6 Typical Junction Capacitance 1 10 100 C J , JUNCTION CAPACITANCE (pF) f = 1MHz 120 160 200 I F(AV) , AVERAGE FORWARD CURRENT (A) Fig. 5 Forward Power Dissipation 8 12 16 P D , POWER DISSIPATION (W) 4 20 DC, T J = 150°C U1630G U1640G U1660G U1620G T C = 25°C T C = 125°C T C = 100°C U1620G U1630G/U1640G/U1660G U1630G U1640G U1660G U1620G A =25°C unless otherwise noted) RATINGS AND CHARACTERISTICS CURVES U1620G thru U1660G