TYN408 STMICROELECTRONICS | Alldatasheet
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Technical content
&wTr SGS-THOMSON TXN/TYN 058 (G) ---> Jf icRortecvromes }= TXN/TYN 1008 (G) a SCR OE
FEATURES
« HIGH SURGE CAPABILITY « HIGH ON-STATE CURRENT A > K a» HIGH STABILITY AND RELIABILITY a = TXN Serie = INSULATED VOLTAGE = 2500Vams) (UL RECOGNIZED : £81734)
DESCRIPTION
The TYN/TXN 058 ---> TYN/TXN 1008 Family of G Silicon Controlled Rectifiers uses a high performance k* glass passivated chips technology. This general purpose Family of Silicon Controlled T0220AB Rectifiers is designed for power supplies up to (Plastic) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) [smoot [Paramore | ut | pene pemeng, —(ea||* (180° conduction angle) TYN | Tco=105°C HAV) Average on-state current TXN | Tc=100°C. A (180° conduction angle,single phase circuit) TYN | To=105°C. fv [rmaresrepmmennone fesm} = : (7) initial = 25°C ) feiom | we 0 ST Critical rate of rise of on-state current Alps Gate supply :1G = 100 mA diG/dt = 1 As Tstg Storage and operating junction temperature range - 40 to +150 °C Tj = 40 to+ 125 °C peers] from case [ ose [ 100 | 200 | 00 | soe | eve | 100s | VDRM Repetitive peak off-state voltage 800 v VARM Ti= 125°C April 1995 15 ms 7929237 OO7b5b0 397
TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) THERMAL RESISTANCES [symbon [Parmer |e | nt | Pw fs | GATE CHARACTERISTICS (maximum values) Pa (av)=1W-PGM = 10W (p= 20Hs) IFGM = 4A (p= 20 ps) VRGM = 5V.
ELECTRICAL CHARACTERISTICS
[eo [orion Aaa | ewe | ww [oe Vp=Vprm_ Ig = 40mA Tj-25°C | TYP ps dightt = 0.5Aus Pa deze id awe [| me | | th [tre tooma gatooven | thasrc | max | so [as | ma | [vr [imma pesens SCid awe [we te I vy Rated ~ |e dV/at Linear slope up to Vp=67%VDRM Tj= 110°C Vius gate open Vp=67%VpRM tM=16A VR=25V | T= 110°C | TYP 70 ditwat=30 A/ys dVp/dt= 50V/us S / Miri cai raiceri oh @@ 7929237 0076561 e23
TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) Po ak TXN aS a es (Insulated) Es ee ee ee | oo Px a a a J tooo ff XU TYN a ee (Uninsulated) Ee a a | a a a Fig.1 : Maximum average power dissipation versus Fig.2 : Correlation between maximum average power average on-state current (TXN). dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (TXN). Pw) Pw) Tease (°C) 8 8 0 5 | Now) ft INE NAY a KS x. 120 dt] Tt NIANY ET thio TAG Ao. “Tan NNT | ge ra-~ ee ee NN | JF cw tt + | | fT | Nf ae [faa gt ames | TT NA Lag 0 1 2 3 4 5 6 7 0 20 40 #60 80 100 120 140 Fig.3 : Maximum average power dissipation versus Fig.4 : Correlation between maximum average power average on-state current (TYN). dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (TYN). Pw) P(W) Tease (°C) 10 10 = It100 . Rih = O°C/W mali ttt yi Les oT ae) NN
6 Amok N YX /___|
Nye Sa: EEA | = 90° \\ ty . \\ a ee ee °F 1 2 3 4 5 6 7 8 % 20 «440 60 80 100 120 74075 . 3S TTT EE EEE wm 7929237 O07bSbe 1bT
TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) Fig.5 : Average on-state current versus case Fig.6 : Average on-state current versus case temperature (TXN). temperature (TYN). "TavyA) 'ayyA) TOT : [| | | TTT TT CON) LETT TEN TTT ATT TTP N ELLEN EEE EN EL [vee TEEN) TT Lee | TT M O40 20 30 40 50 GO 70 0 @0 100 110 120130 qo 20 80 40 50 60 70 80 00 100 110 120 130 Fig.7 : Relative variation of thermal impedance versus Fig.8 : Relative variation of gate trigger current versus pulse duration. junction temperature. zaRn 1 INT ere ees ir a a 25%) a 25%) eee ® " EES er 25) fam Sa 2 Naa LT | [| ana amo CO Ya 2 IN Paallil| CT V7 IN GT UT mas oa LL UN fl Wh BSN ai Cor ee CT ee | PSE ST a 06 i ? i Pe TTT col SHE TTI TTT) 163. 162 14 4Es0 1Es1 1Es2 5Es2 =40-80-20-10 © 10 20 90 40 60 0 70 60 80 100110 Fig.9 : Non repetitive surge peak on-state current Fig.10 : Non repetitive surge peak on-state current for versus number of cycles. a sinusoidal pulse with width : t < 10 ms, and corresponding value of I2t. ‘15m (A) Iysm (A). I't (Ata) 100 Tit] === 80 cc a OO EUAN a eel 60 400} [ HI] — ——=— = | = SSE EER ———— oo
40 His =e aaa
0 PLL Il ee
merce (ll Tm = LT Tee) 1 10 100 1000 1 2 5 10 577, SESSTHOMSON. we 7929237 0076563 OTL
TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) Fig.11 ; On-state characteristics (maximum values). "1M fA) 100. — _—— —_—_ ss a i tg «0.860 Ff Ft 0.0460 _ i ft 9 1 2 3 4 5 PACKAGE MECHANICAL DATA TO220AB Plastic lm Millimeters A Cs | Min. | Max. | Min. | Max. | i S s | A | 10.00 | 10.40 | 0.39 | 0.409 | | F | 350 | 420 | 0.137 | 0.165 | 9 | G | 265 | 2.95 | 0.104 | 0.116 - Wdhice 5 £ | 1 | 375 | 3.85 | 0.147 | 0.151 | fw | t | 049 | 070 | 0.019 | 0.027 ‘ooling method Recommended torque value -0.8 m.N. Marking : type number Maximum torque value : 1 m.N. Weight : 2.3 9 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Micro- electronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. > / Mi tereriouant) Me 75929237 OO7bSb4Y T32