TXDV408 STMICROELECTRONICS | Alldatasheet

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Technical content

TXDV 408 ---> 808 March 1995 ALTERNISTORS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360° conduction angle) Tc = 90 °C8 A ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 2.5 ms 115 A tp = 8.3 ms 85 tp = 10 ms 80 I2tI 2t value tp = 10 ms 32 A 2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 500mA diG /dt = 1A/µs Repetitive F = 50 Hz

20 A/ µs

Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TO220AB (Plastic) A2 G .VERY HIGH COMMUTATION : > 28 A/ms (400Hz) .INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) .dV/dt : 500 V/µs min

DESCRIPTION

Symbol Parameter TXDV Unit 408 608 808 VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 600 800 V ABSOLUTE RATINGS (limiting values)

FEATURES

The TXDV 408 ---> 808 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge cur- rent capability, this family is well adapted to power control on inductive load (motor, transformer...)

GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 °C/W Rth (j-c) DC Junction to case for DC 4 °C/W Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 3 °C/W Symbol Test Conditions Quadrant Value Unit IGT VD =12V (DC) RL=33Ω Tj=25°C I-II-III MAX 100 mA VGT VD =12V (DC) RL=33Ω Tj=25°C I-II-III MAX 1.5 V VGD VD =V DRM RL=3.3kΩ Tj=110°C I-II-III MIN 0.2 V tgt V D =V DRM IG = 500mA dIG /dt = 3A/µs Tj=25°C I-II-III TYP 2.5 µs IL IG =1.2 IGT Tj=25°C I-III TYP 100 mA II 200 IH * I T= 500mA gate open Tj=25 °C MAX 100 mA VTM *I TM = 11A tp= 380µs Tj=25 °C MAX 1.8 V IDRM IRRM VDRM Rated VRRM Rated Tj=25°C MAX 0.01 mA Tj=110°C MAX 2 dV/dt * Linear slope up to VD =67%V DRM gate open Tj=110°C MIN 500 V/ µs (dI/dt)c * (dV/dt)c = 200V/µs Tj=110 °C MIN 7 A/ms (dV/dt)c = 10V/µs2 8 * For either polarity of electrode A2 voltage with reference to electrode A1. PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).

ELECTRICAL CHARACTERISTICS

TXDV 408 ---> 808

O =1 8 0 o =1 2 0 o =9 0 o =6 0 o =3 0 o T(RMS)I( A ) P(W) Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) 0 20 40 60 80 100 120 140 -90 -85 -95 -100 -115 -105 -125 -110 -120 P( W ) T a m b(C ) o Tcase ( C)o Rth = 0 C/W 2C / W 4C / W 6C / W o o o o Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 1 2 0 1 3 0 =1 8 0 o Tcase( C)o I( A )T(RMS) Fig.3 : RMS on-state current versus case temperature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.1 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig.4 : Relative variation of thermal impedance versus pulse duration. Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. TXDV 408 ---> 808

Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). Fig.9 : Safe operating area. TXDV 408 ---> 808

Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. I A G D B C F P N O M L J H REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 10.20 10.50 0.401 0.413 B 14.23 15.87 0.560 0.625 C 12.70 14.70 0.500 0.579 D 5.85 6.85 0.230 0.270 F 4.50 0.178 G 2.54 3.00 0.100 0.119 H 4.48 4.82 0.176 0.190 I 3.55 4.00 0.140 0.158 J 1.15 1.39 0.045 0.055 L 0.35 0.65 0.013 0.026 M 2.10 2.70 0.082 0.107 N 4.58 5.58 0.18 0.22 O 0.80 1.20 0.031 0.048 P 0.64 0.96 0.025 0.038 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. TXDV 408 ---> 808