TWL2203

TWL2203 TI | Alldatasheet

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POWER SUPPLY MANAGEMENT IC SLVS185 – FEBRUARY 2000 1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 /C0068Li-Ion Battery Charging Control /C0068Over-Voltage Shutdown /C0068Seven Low-Dropout Low-Noise Linear Voltage Regulators (LDO) /C0068Voltage Detectors (With Power-Off Delay) /C0068Four-Channel Analog Multiplexer /C0068Three General-Purpose Operational Amplifiers /C0068Ringer Driver /C0068Power Supply Switch for Accessories /C0068Low Quiescent Current /C006848-pin TQFP 14 15 RINGON RING VOUT6 DET_DELAY VOUT2 V CC VSUP VOUT4 VOUT5 VOUT3 VOUT1 EN3 VREF MUXOUT MUXIN0 MUX0 MUX1 MUXIN1 MUXIN2 MUXIN3 OP1I– OP1I+ OP2I– OP2I+ 17 18 19 20 TCOUT VB CH VG2 47 46 45 44 4348 42 VEXT IADJ VG1 ICH+ VOUT7 EN4 EN1 EN2 OP1O OP3O GND DET2 VCH DET1 40 39 3841 21 22 23 24 GNDRING ICH- ENOP_MUX OP3I– OP3I+ OP2O PFB PACKAGE (TOP VIEW)

description

The TWL2203 incorporates a complete power-management system for a cellular telephone that uses lithium-ion cells. The device includes circuitry to control the gate voltage of two P-channel MOSFETs. The MOSFETs perform constant-voltage/constant-current charging (CVCC). The TWL2203 has seven low-drop linear voltage regulators (LDO) to regulate the battery power supply to the different sections of the phone, a battery voltage monitor, a ringer driver, an analog multiplexer, and three general-purpose operational amplifiers for signal conditioning. The TWL2203 is packaged in TI’s 48-pin thin-quad flat package (PFB). Copyright  2000, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. MicroStar is a trademark of Texas Instruments Incorporated. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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TA PLASTIC THIN-QUAD FLAT PACKAGE (PFB) –30°C to 85°C TWL2203PFB functional block diagram M U X 4.2 V Regulation CVCC Charge Switch Control Trickle Charge Current Control Current Limit Control Over- Voltage Shutdown VDET1 VREF LDO REG 7 EN4VDET2 VEXT DET1 VREF DET2 DET_DELAY Power Switch EN3 EN2 EN1 LDO REG 1 VOUT1 LDO REG 2 VOUT2 LDO REG 3 VOUT3 LDO REG 4 VOUT4 LDO REG 5 VOUT5 LDO REG 6 VOUT6 Ringer DriveRING RINGON MUXOUT MUXIN0 MUXIN1 MUXIN2 MUXIN3 MUX0 MUX1 ENOP_MUX OP1I+ OP1I– OP1O OP12+ OP12– OP2O OP12+ OP13– OP3O VG1 VCH IADJ ICH+ ICH- VG2 TCOUT CH VB VSUP VCC VOUT7 VOUT2

POWER SUPPLY MANAGEMENT IC SLVS185 – FEBRUARY 2000 3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 Terminal Functions TERMINAL NAME NO. I/O DESCRIPTION NAME QFB CH 39 I CMOS signal input set to logic high to enable battery-charging function DET_DELAY 33 I/O Delay programming pin for VDET2 DET1 21 O Voltage detector CMOS output DET2 19 O Voltage detector output with 40-kW pull–up resistor EN1 23 I Set to logic high to enable LDO regulators 1–4 and power supply switch EN2 24 I Set to logic high to enable LDO regulator 5 EN3 25 I Set to logic high to enable LDO regulator 6 EN4 22 I Set to logic high to enable LDO regulator 7 ENOP_MUX 42 I Set to logic high to enable the op amps and the analog multiplexer GND 18 Ground for most sections of the device GNDRING 37 Ringer ground IADJ 47 I/O Terminal for gain control of battery-charging current monitor ICH– 43 I Current-sense input/trickle charge, input/power supply to LDO regulator 7, and reference. ICH+ 45 I Current-sense input MUX0 4 I Analog multiplexer channel selector bit-input (logic high is true) MUX1 5 I Analog multiplexer channel selector bit-input (logic high is true) MUXIN0 3 I Analog multiplexer input 0 MUXIN1 6 I Analog multiplexer input 1 MUXIN2 7 I Analog multiplexer input 2 MUXIN3 8 I Analog multiplexer input 3 MUXOUT 2 O Analog multiplexer output OP1I– 9 I Op amp 1 negative input OP1I+ 10 I Op amp 1 positive input OP1O 15 O Op amp 1 output OP2I– 11 I Op amp 2 negative input OP2I+ 12 I Op amp 2 positive input OP2O 16 O Op amp 2 output OP3I– 14 I Op amp 3 negative input OP3I+ 13 I Op amp 3 positive input OP3O 17 O Op amp 3 output RING 35 I Ringer drive input RINGON 36 I Ringer enable (logic high to enable) TCOUT 41 O Trickle-charge output VB 40 I Battery voltage input for charging control VCC 31 Power supply to most of the device VCH 20 I External power supply input for voltage detection VEXT 48 I External voltage input VG1 46 O MOSFET M1 gate drive VG2 38 O MOSFET M2 gate drive VOUT1 26 O LDO REG 1 output 1 VOUT2 32 O LDO REG 2 output 2

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Terminal Functions (Continued) TERMINAL NAME NO. I/O DESCRIPTION NAME QFB VOUT3 27 O LDO REG 3 output 3 VOUT4 29 O LDO REG 4 output 4 VOUT5 28 O LDO REG 5 output 5 VOUT6 34 O LDO REG 6 output 6 VOUT7 44 O LDO REG 7 output 7 VREF 1 O Voltage-reference bypass output VSUP 30 O Power-supply switch output detailed description battery-charging control The battery charging control block in the device is a part of the lithium-ion battery (Li-Ion) charging system of the phone. It is capable of regulating the external power source to charge the lithium-ion battery according to the battery-charging requirements. More information on battery-charging control is presented in the application information section. The MOSFET driver and its feedback-control circuit are enabled/disabled by a CMOS control signal provided by the phone’s microprocessor. The maximum-charging current is set by external resistors for design flexibility. overvoltage shutdown The device shuts down the charging circuit in the presence of an overvoltage condition. low-dropout linear voltage regulators The device has seven separate low-dropout linear-voltage regulators. A single enable signal controls four of the regulators. The last three regulators are controlled by their own enable signals. voltage detectors (with power-off delay) The device has two voltage detectors. The voltage detectors monitor the voltage level of the external power and VCC . The external power detector (VDET1) has a CMOS output. The VCC detector (VDET2) activates on the falling edge and has user-adjustable power-off delay. There is an internal pullup resistor on the output. analog multiplexer The device has a four-channel analog multiplexer with two-bit channel-selector signal input and a shutdown function. In the shutdown mode, all the input and output terminals are in the high-impedance state. operational amplifiers The device has three rail-to-rail operational amplifiers with common shutdown control. power supply switch for external phone accessories The device provides current-limited voltage supply to the external phone accessories via the external-interface connector. The power supply switch is controlled by the same enable signal (EN1) that controls the four regulators—LDO1-LDO4. The external phone accessories are resistive in nature. ringer driver The device is capable of driving a ringer. It is controlled by a CMOS signal, and uses an N-channel low-side driver.

POWER SUPPLY MANAGEMENT IC SLVS185 – FEBRUARY 2000 5POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 DISSIPATION-RATING TABLE – FREE-AIR TEMPERATURE PACKAGE TA <25°C POWER RATING OPERATING FACTOR ABOVE T A = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING PFB 1962 mW 15.7 mW/°C 1256 mW 1020 mW absolute maximum ratings over operating free-air temperature (unless otherwise noted)† † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. recommended operating conditions PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Supply voltage VCC In regulation 2.85 3.75 4.25 VSupply voltage, VCC In transient condition 2.85 6 V VEXT Allowable range 0 5.5 12 VVEXT Normal charging operation 4.6 5.5 6 V VCH 2.1 6 V High-level logic input, VIH 2.1 V Low-level logic input, VIL 0.9 V electrical characteristics over recommended operating junction temperature range, VCC = 3.75 V and VEXT = 5.5 V (unless otherwise specified) current table, TA = –40°C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Shutdown current EN1 = EN2 = EN3 = EN4 = ENOP_MUX = VCH = CH = RINGON = VEXT = GND 50 90 Quiescent current LDOreg. 1–4, power-switch quiescent current EN1 = VOUT2, EN2 = EN3 = EN4 = ENOP_MUX = VCH = CH = RINGON = VEXT = GND 210 350 Quiescent current LDOreg. 1–5, power-switch quiescent current EN1 = EN2 = VOUT2, EN3 = EN4 = ENOP_MUX = VCH = CH = RINGON = VEXT = GND 240 400 Quiescent current LDOreg. 1–6, power-switch quiescent current EN1 = EN2 = EN3 = VOUT2, EN4 = ENOP_MUX = VCH = CH = RINGON = VEXT = GND 270 450 mA Quiescent current LDOreg. 1–7, power-switch quiescent current EN1 = EN2 = EN3 = EN4 = VOUT2, ENOP_MUX = VCH = CH = RINGON = VEXT = GND 300 500 Quiescent current LDOreg. 1–7, Power-switch, MUX, op amp quiescent current EN1 = EN2 = EN3 = EN4 = ENOP_MUX = VOUT2, VCH = CH = RINGON = VEXT = GND 470 800 Quiescent current LDOreg. 1–4, Power-switch, MUX, op amp quiescent current EN1 = ENOP_MUX = VOUT2, EN2 = EN3 = EN4 = RINGON = VCH = CH = VEXT = GND 370 700 LDOreg. 1–7, Power-switch, MUX, op amp, charger quiescent current VCH = 4.8 V, EN1 = EN2 = EN3 = EN4 = ENOP_MUX = CH = VOUT2, RINGON = GND 2.5 4.0 mA

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battery charging control, TA = 0°C to 50°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Constant voltage VB Charge current = 50 mA, EN1 = CH = VOUT2, EN2 = EN3 = EN4 = ENOP_MUX = GND, VEXT = 5 – 6 V 4.15 4.20 4.25 V Voltage drop across sense resistor ICH+ – ICH–CH = VCC 85 100 115 mV Precharge current (VR6 threshold) TCOUT – VB, VB<Vtc 75 125 175 mV Vtc Precharge threshold 3.30 3.40 3.50 V Ipc Precharge capability VB = 3.5 V, TCIN = 4.15 V, R6 =2 W, Current limit control is disabled 50 mA over-voltage shutdown, TA = 0°C to 50°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Vchco Over-voltage cutoff point for VCH 4.7 5.4 6 V Vgco Over-voltage cutoff point for VEXT 6.5 7.5 8.5 V

POWER SUPPLY MANAGEMENT IC SLVS185 – FEBRUARY 2000 7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating junction temperature range, VCC = 3.75 V and VEXT = 5.5 V (unless otherwise specified) (continued) LDO regulator 1 (LCD Module), TA = –20°C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Dropout voltage IOUT1 = 1 mA 100 mV Maximum current VCC = 3.75 V, VOUT1 = 2.85 V 5 mA Current limit VOUT1 shorted to GND 7.5 mA Ripple rejection f = 400 Hz, IOUT1 = 1 mA 50 dB LDO regulator 2 (Digital), TA = –30°C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Output voltage VOUT2 IOUT2 = 5 mA to 150 mA, VCC = 3.3 V to 4.2 V, EN1 = 3 V2.825 3 3.175 V Dropout voltage IOUT2 = 80 mA 250 mV Maximum current VCC = 3.75 V, VOUT2 = 2.85 V 200 mA Current limit VOUT2 shorted to GND 300 mA Ripple rejection f = 400 Hz, IOUT2 = 100 mA 50 dB LDO regulator 3 (TCX0), TA = –30°C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Output voltage VOUT3 IOUT3 = 1 mA to 3 mA, V CC = 3.3 V to 4.2 V, EN1 = 3 V2.825 3 3.175 V Dropout voltage IOUT3 = 3 mA 100 mV Maximum current VCC = 3.75 V, VOUT3 = 2.85 V 5 mA Current limit VOUT3 shorted to GND 7.5 mA Ripple rejection f = 400 Hz, IOUT3 = 3 mA 60 dB LDO regulator 4 (Audio), TA = –30°C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Output voltage VOUT4 IOUT4 = 5 mA to 40 mA, V CC = 3.3 V to 4.2 V, EN1 = 3 V2.825 3 3.175 V Dropout voltage IOUT4 = 40 mA 250 mV Maximum current VCC = 3.75 V, VOUT4 = 2.85 V 75 mA Current limit VOUT4 shorted to GND 112 mA Ripple rejection f = 400 Hz, IOUT4 = 30 mA 60 dB

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electrical characteristics over recommended operating junction temperature range, VCC = 3.75 V and VEXT = 5.5 V (unless otherwise specified) (continued) LDO regulator 5 (RX), TA = –30°C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Output voltage VOUT5 IOUT5 = 10 mA to 30 mA, VCC = 3.3 V to 4.2 V, EN1 = 3 V2.825 3 3.175 V Dropout voltage IOUT5 = 20 mA 250 mV Maximum current VCC = 3.75 V, VOUT5 = 2.85 V 40 mA Current limit VOUT5 shorted to GND 60 mA Ripple rejection f = 400 Hz, IOUT5 = 20 mA 60 dB LDO regulator 6 (TX), TA = –30°C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Output voltage VOUT6 IOUT6 = 30 mA to 70 mA, VCC = 3.3 V to 4.2 V, EN1 = 3 V2.825 3 3.175 V Dropout voltage IOUT6 = 50 mA 250 mV Maximum current VCC = 3.75 V, VOUT6 = 2.85 V 70 mA Current limit VOUT6 shorted to GND 105 mA Ripple rejection f = 400 Hz, IOUT6 = 50 mA 60 dB LDO regulator 7 (PLL), TA = –30°C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Output voltage VOUT7 IOUT7 = 10 mA to 25 mA, VCC = 3.3 V to 4.2 V, EN1 = 3 V2.825 3 3.175 V Dropout voltage IOUT7 = 20 mA 250 mV Maximum current VCC = 3.75 V, VOUT7 = 2.85 V 30 mA Current limit VOUT7 shorted to GND 45 mA Ripple rejection f = 400 Hz, IOUT7 = 20 mA 60 dB Output noise voltage (RMS) BW = 300 Hz – 50 kHz 100‡ mV † With external filtering VDET1, TA = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCH Threshold voltage of CH 2.85 3 3.15 V Hysteresis voltage of CH 100 mV VODET1 Output voltage VCH > THRESHOLDV 0 0.3 V VODET2 Output voltage VCH < THRESHOLDV VOUT2 0.3 V TCDET1 Temp. coefficient of VODET1 ±100 ppm/°C

POWER SUPPLY MANAGEMENT IC SLVS185 – FEBRUARY 2000 9POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating junction temperature range, VCC = 3.75 V and VEXT = 5.5 V (unless otherwise specified) (continued) VDET2, TA = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Threshold voltage of VCC 2.85 3 3.15 V Hysteresis voltage of VCC 100 mV VODET1 Output voltage VCH > THRESHOLDV 0 0.3 V VODET2 Output voltage VCH < THRESHOLDV VOUT2 V TCDET2 Temperature coefficient of VDET2 ±100 ppm/°C TDELAY2 Delay of VDET2 Cdet_delay = 0.1 mF 35 50 75 ms power switch, TA = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VSUP Output voltage ISUP = 0 mA – 50 mA, VCC = 3.75 V 3.45 3.60 3.75 V VON On voltage VCC = 3.3 V – 5 V, ISUP = 30 mA 300 mV IMAX Maximum current VCC = 3.75 V ,VSUP = 0 V 200 mA IMIN Minimum current VCC = 3.75 V, VSUP = 3.45 V 70 mA analog multiplexer, TA = –30°C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Sine-wave distortion 1 kHz, 1 Vpp, 1.5 VDC offset 0.1% FMAX Frequency response (switch on) –3 dB gain 1 MHz Feed-through attenuation (switch off)f = 250 kHz –40 dB Crosstalk (control input to signal output)Tr = Tf = 50 ns 100 mV Crosstalk (between switches) f = 250 kHz –50 dB DC CHARACTERISTICS R ON On resistance 700 1200 W DR ON Difference of ON resistance between switches 10 W IOFF Input/output leakage current ±400 nA IZ Switch input leakage current ±400 nA IIN Control-input current ±1 mA Iq Quiescent current 10 mA AC CHARACTERISTICS Phase difference between input and output1 kHz (spec is flexible, dependent on the design) 50 ns Output enable time tpzl, tpzh 100 ns Output disable time tplz, tphz 150 ns C IN Control input capacitance All pins 10 pF C IOS Input terminal capacitance 15 pF C IS Output terminal capacitance 50 pF C IOS Feed-through capacitance 2 pF

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electrical characteristics over recommended operating junction temperature range, VCC = 3.75 V and VEXT = 5.5 V (unless otherwise specified) (continued) operational amplifiers, TA = –30°C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOS Input offset voltage Vcm = 1.5 V 2 10 mV IOPB Input bias current 50 250 na IOPOS Input offset current 5 50 nA R IN Input resistance DC resistance 100 M W CMMR Common-mode rejection ratio f = 400 Hz, Vcm = 1.5 V 65 75 dB VCM Input common voltage 0.1 2.9 V PSRR Power-supply rejection ratio f = 400 Hz, Vcm = 1.5 V 60 70 dB C IN Common-mode input capacitance 3 pF VO Output swing, high Output high, IO = 2.5 mA (source) 2.9 2.95 V VO Output swing, low Output low, IO = –2.5 mA (sink) 0.1 0.15 V IO Output current DC Current ±2.5 mA THD Total harmonic distortion f = 1 kHz, 20 dB closed-loop gain, IO = 0.5 mA 1% SR Slew rate 0.3† V/ms GBW Gain bandwidth product 300 kHz ringer driver, TA = –30°C to 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT R ON On resistance RINGON = V CC , IOUTRING = 100 mA, TA = 25°C 3 W TONRING Turnon time 10 ms TOFFRING Turnoff time 10 ms internal power supply PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VINTERNAL Output voltage ILOAD = 7.5 mA 3.1 3.25 3.4 V bandgap reference PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Output voltage 1.1812 1.192 1.2028 V Output noise voltage (RMS) BW = 300 Hz – 50 kHz 800 nV/Hz REFVALID Reference valid 5 mA thermal shutdown PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Trip point 160 190 °C Hysteresis temperature 15 °C

POWER SUPPLY MANAGEMENT IC SLVS185 – FEBRUARY 2000 11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 THERMAL INFORMATION The implementation of integrated circuits in low-profile and fine-pitch surface-mount packages requires special attention to power dissipation. Many system-dependent issues such as thermal coupling, airflow, added heat sinks and convection surfaces, and the presence of other heat-generating components affect the power- dissipation limits of a given component. Three basic approaches for enhancing thermal performance are listed below. /C0068Improving the power dissipation capability of the printed-circuit board design /C0068Improving the thermal coupling of the component to the printed-circuit board /C0068Introducing airflow into the system Using the given RqJA for this device, the maximum power dissipation can be calculated with the equation: P D (MAX )/C0043 TJ(MAX )/C0042TA R /C0113JA

APPLICATION INFORMATION

The output bypass capacitor of each LDO regulator should be selected from the list of ceramic capacitors shown below. The VCC bypass capacitors should be selected from the list of tantalum capacitors shown below. Tantalum capacitors have good temperature stability and offer good capacitance for their size. Care should be taken when using marginal quality tantalum capacitors, as the increase of the equivalent series resistance (ESR) at low temperatures can cause instability. For a given capacitance, ceramic capacitors are usually larger and more costly than tantalums. The capacitance of ceramic capacitors varies greatly with temperature. In addition, the ESR of ceramic capacitors can be low enough to cause instability. A low-value resistor can be added in series with the ceramic capacitor to provide a minimum ESR. ceramic (X7R or X5R) CAPACITANCE CASE SIZE ESR (MAX) 1 mF 0805 3.8 mW 2.2 mF 0805 4.5 mW 3.3 mF 0805 4.1 mW 2.2 mF 1206 3.4 mW 4.7 mF 1206 1.9 mW tantalum (6.3 V rating) CAPACITANCE CASE SIZE ESR (MAX) 4.7 mF A(3216) 6 W 6.8 mF A(3216) 6 W 10 mF A(3216) 4 W 10 mF P(0805) 6 W

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REFERENCE DESCRIPTION MANUFACTURER VALUE PART NUMBER C1 Ceramic, 0805, X7R 100 pF C2 Ceramic, 0805, X7R 0.01 mF C3 Tantalum, 6.3 V, Case B, 20% Siemens Matsushita 10 mF B 45 196-E1106-M20 C4 Ceramic, 0805 0.01 mF C5 Tantalum, 6.3 V, Case B, 20% Siemens Matsushita 10 mF B 45 196-E1106-M20 Cldo1 Ceramic, 0805, X7R 0.22 mF Cldo2 Ceramic, 10 V, 1206, X5R, 20% Taiyo Yuden 4.7 mF LMK316BJ475ML Cldo3 Ceramic, 0805, X7R 0.22 mF Cldo4 Ceramic, 10 V, 1206, X5R, 20% Taiyo Yuden 3.3 mF LMK316BJ335ML Cldo5 Ceramic, 16 V, 0805, X5R, 20% Taiyo Yuden 2.2 mF LMK212BJ225MG Cldo6 Ceramic, 10 V, 1206, X5R, 20% Taiyo Yuden 4.7 mF LMK316BJ475ML Cldo7 Ceramic, 16 V, 0805, X5R, 20% Taiyo Yuden 2.2 mF LMK212BJ225MG Cvref Ceramic, 0805, X7R 1000 pF Cdet_delay Ceramic, 0805, X7R 0.1 mF D1 Schottky diode Rohm RB051L-40 L1 1 mH M1 Siliconix Si3455DV Fairchild FDC654P M2 Siliconix Si3441DV Siliconix Si3443DV Siliconix Si2305DS Fairchild FDC634P R1 1/4 W, 5% 0.1 W R2 0805, 1/10 W, 5% 10 kW R3 0805, 1/10 W, 5% 1 kW R4 0805, 1/10 W, 5% 560 W R5 0805, 1/10 W, 5% 6.8 kW R6 0805, 1/10 W, 5% 2.7 W R7 0805, 1/10 W, 5% 10 kW

POWER SUPPLY MANAGEMENT IC SLVS185 – FEBRUARY 2000 13POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 M U X R7 R4 C2 C3 M1 M2D1 4.2 V Regulation CVCC Charge Switch Control Trickle Charge Current Control Current Limit Control Lithium Ion Battery Over- Voltage Shutdown VDET1 VREF LDO REG 7 VOUT7 Cldo7 EN4 VDET2 VEXT DET1 VREF Cvref Cdet_Delay DET2 DET_DELAY C5C4 Power Switch EN3 EN2 EN1 LDO REG 1 VOUT1 Cldo1 LDO REG 2 VOUT2 Cldo2 LDO REG 3 VOUT3 Cldo3 LDO REG 4 VOUT4 Cldo4 LDO REG 5 VOUT5 Cldo5 LDO REG 6 VOUT6 Cldo6 Ringer DriveRING RINGON MUXOUT MUXIN0 MUXIN1 MUXIN2 MUXIN3 MUX0 MUX1 _ VEXT ENOP_MUX OP1I+ OP1I– OP1O OP12+ OP12– OP2O OP12+ OP13– OP3O VG1 VCH IADJ ICH+ ICH- VG2 TCOUT CH VB VSUP VOUT2

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battery-charging control (continued) The battery-charging control block in the device is a part of the Li-Ion battery charging system of the phone. The device controls the P-channel MOSFET to accomplish constant-voltage/constant-current charging (CVCC) within a ±1% tolerance in the charging termination voltage. The battery charging control consists of the two sections: /C0068CVCC charge-switch control with feedback loops for voltage and current control /C0068Trickle charge-current control When the voltage-detector output (DET1) is set high, the voltage-control loop is activated to regulate the voltage of ICH- to 4.2 V. Then, when the control signal input CH is set high, either the current-control loop or the trickle-charge control block is activated, depending upon battery voltage. When VB is below the threshold Vtc, the trickle-charge current control block directs the current to the battery via TCIN, trickle-charging current control, TCOUT, R6, and the battery. The measure of the voltage across sense resistor R6 is used for feedback-control of the rate of charging current. Once the battery voltage reaches the threshold Vtc, the CVCC charge-switch control block becomes active and controls the P-channel MOSFET M1. The feedback control ensures that the voltage ICH- does not exceed 4.2 V ± 0.05 V (4.2 V regulation), and the current draw of resistor R1 does not exceed the specified value (current-limit control). In this case, the charging current drains via R1, M2, and the battery. The maximum charging current is set by external resistors for design flexibility. analog multiplexer output table MUX1 MUX2 OUTPUT 0 0 MUXIN0 0 1 MUXIN1 1 0 MUXIN2 1 1 MUXIN3

POWER SUPPLY MANAGEMENT IC SLVS185 – FEBRUARY 2000 15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 MECHANICAL DATA PFB (S-PQFP-G48) PLASTIC QUAD FLATPACK 4073176/B 10/96 Gage Plane 0,13 NOM 0,25 0,45 0,75 Seating Plane 0,05 MIN 0,17 0,27 SQ 7,20 6,80 5,50 TYP SQ8,80 9,20 1,05 0,95 1,20 MAX 0,08 0,50 M0,08 0°–7° NOTES: A. All linear dimensions are in millimeters. B. This drawing is subject to change without notice. C. Falls within JEDEC MS-026

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