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MOSFETs Silicon Carbide N-Channel MOS TW070J120BTW070J120BTW070J120BTW070J120B Start of commercial production 2020-08 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications

  • Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Chip design of 2nd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 70 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 4.2 to 5.8 V (VDS = 10 V, ID = 20 mA) (6) Enhancement mode. 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit TO-3P(N) 1: Gate 2: Drain (heatsink) 3: Source 2020-08-05 Rev.2.0 ©2020 Toshiba Electronic Devices & Storage Corporation
  1. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaaa = 25 = 25 = 25 = 25  unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Channel temperature Storage temperature Mounting torque ( Tc = 25  ) ( Tc = 100  ) ( Tc = 25  ) (Note 1) (Note 1) (Note 1) Symbol VDSS VGSS ID ID IDP PD Tch Tstg TOR Rating 1200 +25/-10 36.0 25.5 272 175 -55 to 175 0.8 Unit V A W N m Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 0.55 Unit  /W Note 1: Ensure that the channel temperature does not exceed 175  . Note: This transistor is sensitive to electrostatic discharge and should be handled with care. It should be used for switching applications. 2020-08-05 Rev.2.0 ©2020 Toshiba Electronic Devices & Storage Corporation
  1. 6. 6. 6. Electrical CharacteristicsElectrical CharacteristicsElectrical CharacteristicsElectrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 2) Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) Test Condition VGS = +25/-10 V, VDS = 0 V VDS = 1200 V, VGS = 0 V Ta = 175  , VDS = 1200 V, VGS = 0 V ID = 1 mA, VGS = 0 V VDS = 10 V, ID = 20 mA VGS = 20 V, ID = 18 A Ta = 150  , VGS = 20 V, ID = 18 A Min 1200 4.2 Typ. 0.2 3.0 Max ±0.5 5.8 Unit µA V mΩ Note 2: Please be sure to IGSS (VGS = 25 V) test before the Vth test. Characteristics Input capacitance Reverse transfer capacitance Output capacitance Coss stored energy Gate resistance Turn-on delay time Switching time (rise time) Turn-off delay time Switching time (fall time) Turn-on switching loss Turn-off switching loss Symbol Ciss Crss Coss Eoss rg td(on) tr td(off) tf Eon Eoff Test Condition VDS = 800 V, VGS = 0 V, f = 100 kHz VDS = OPEN, f = 100 kHz See Fig. 6.5.1 See Fig. 6.5.2 Min Typ. 1680 109 3.5 0.380 0.035 Max Unit pF µJ Ω ns mJ Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Qg Qgs1 Qgd Test Condition VDD ≈ 800 V, VGS = 20 V, ID = 18 A Min Typ. Max Unit nC Characteristics Diode forward current (DC) Diode forward current (pulsed) Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current (Note 3) (Note 3) Symbol IF IFP VDSF trr Qrr Irr Test Condition Tc = 25  Tc = 100  Tc = 25  Tc = 100  IDR = 10 A, VGS = -5 V Ta = 150  , IDR = 10 A, VGS = -5 V IDR = 10 A, VGS = 0 V, VDD = 800 V, -dIDR/dt = 1000 A/µs Min Typ. -1.35 -1.70 170 Max 29.6 -1.80 Unit A V ns nC A Note 3: Ensure that the channel temperature does not exceed 175  . 2020-08-05 Rev.2.0 ©2020 Toshiba Electronic Devices & Storage Corporation

VGS1 = -5 V RG1 = 0 Ω VGS2 = -5 V / +20 V (pulsed) RG2 = 4.7 Ω VDD ≈ 800 V ID = 10 A L = 100 µH 2020-08-05 Rev.2.0 ©2020 Toshiba Electronic Devices & Storage Corporation

  1. 7. 7. 7. Marking (Note)Marking (Note)Marking (Note)Marking (Note) Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2020-08-05 Rev.2.0 ©2020 Toshiba Electronic Devices & Storage Corporation
  1. 8. 8. 8. Characteristics Curves (Note)Characteristics Curves (Note)Characteristics Curves (Note)Characteristics Curves (Note) 2020-08-05 Rev.2.0 ©2020 Toshiba Electronic Devices & Storage Corporation

Rev.2.0 ©2020 Toshiba Electronic Devices & Storage Corporation

(Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum) (Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum) (Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum) (Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum)(Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2020-08-05 Rev.2.0 ©2020 Toshiba Electronic Devices & Storage Corporation

Package DimensionsPackage DimensionsPackage DimensionsPackage Dimensions Unit: mm Weight: 4.6 g (typ.) Package Name(s) TOSHIBA: 2-16C1S Nickname: TO-3P(N) 2020-08-05 Rev.2.0 ©2020 Toshiba Electronic Devices & Storage Corporation

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