TVSF0603 MICROSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Transient Protection Products Group 8700 East Thomas Rd., PO Box 1390, Scottsdale AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 http://www.microsemi.com/tvs Page 1Copyright  2004 TVSF0603.PDF 02-04-2004 REV A WWW.Microsemi .COM TVSF0603 “FemtoFarad” Polymer ESD Suppressor T RANSIENT P ROTECTION P RODUCTS DESCRIPTIONDESCRIPTION DESCRIPTIONDESCRIPTION The “FemtoFarad” product family is specifically for ESD bidirectional protection of vulnerable electronic components, especially at IO ports. Continued shrinking of on- chip component geometries of sub-micron sizes have reduced levels of ESD at which upset and failure occurs to the extent that protection is mandatory for reliability of power and data line interfaces. The sub-picofarad capacitance of this series provides excellent performance up through six GHz with minimal attenuation without linear or harmonic distortion well into the GHz range. In the off-state, this FemtoFarad, polymeric based technology is virtually invisible to circuit performance. Its proven structure is thick film on a rugged ceramic base that is ideal for automated assembly. Subsequent paragraphs and charts describe the outstanding performance and reliability of FemtoFarad components and many other features that make them the designer’s choice for ESD protection. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATURES KEY FEATURES KEY FEATURES KEY FEATURES /square4 Exceeds surge per IEC 61000-4-2 /square4 Small 0603 footprint /square4 Linear performance at MHz levels /square4 Ultra-low capacitance /square4 Ultra-low-standby current /square4 Fast response time /square4 Bidirectional APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT APPLICATIONS/BENEFITAPPLICATIONS/BENEFITSS SS /square4 High speed data line protection /square4 Low signal distortion/attenuation /square4 ESD protection for mobile/cell phones /square4 Protects sensitive high frequency components Part Ratings and Characteristics Performance Characteristics Min Typ Max Units Continuous dc operating voltage - - 24 V Clamping voltage 3 - 35 60 V Trigger voltage 4 - 125 - V ESD Threat voltage capability 5 - 8 15 kV Capacitance (@ 1 MHz) - 0.15 0.25 pF Standby current (@ 12 V) 0.01 <0.1 - nA Peak current 3, 5 - 30 45 A Operating temperature -56 +25 +85 °C ESD pulse withstand 3 20 >500 2 - # pulses TTVVSSFF00660033 Notes: 1. Continuous operation with 12 volts or more under extreme temperature and humidity may cause increasing leakage current and/or shifting device resistance. However, even under severe environmental test, characteristics of the device did not change up to 6 V dc o peration. 2. Some shifting in characteristics may occur when tested over several hundred ESD pulses at very rapid rate of 1 pulse per second or faster. 3. Per IEC 61000-4-2, 30 A @ 8 kV, level 4, clamp measurement made 30 ns after initiation of pulse, all tests in contact discharge mode. 4. Trigger measurement made using Transmission Line Pulse (TLP) method. 5. FemtoFarad devices are capable of withstanding up to a 15 kV, 45 A ESD pulse. Device ratings are given at 8 kV per Note 1, unle ss otherwise specified. Environmental Specifications:

  • Moisture Resistance, steady state: MIL-STD-883, method 1004.7, 85% RH, 85ºC, 240 hrs.
  • Thermal shock: MIL-STD-202, Method 107G, -65°C to 125°C, 30 min. cycle, 10 cycles
  • Vibration: MIL-STD-202F, Method 201A,(10 to 55 to 10 Hz, 1 min. cycle, 2 hrs each in X-Y-Z)
  • Chemical resistance: ASTM D-543, 4 hrs @ 40°C, 3 solutions (H2O, detergent solution, defluxer)
  • Operating temperature characteristics, measurement at +25°C, +85°C and –56°C
  • Full load voltage: 14.4 V dc, 1000 hrs, 25°C
  • Solder leach resistance and terminal adhesion: Per EIA-576
  • Solderability: MIL-STD-202, Method 208 (95% coverage)

Transient Protection Products Group 8700 East Thomas Rd., PO Box 1390, Scottsdale AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 http://www.microsemi.com/tvs Page 2Copyright  2004 TVSF0603.PDF 02-04-2004 REV A WWW.Microsemi .COM TVSF0603 “FemtoFarad” Polymer ESD Suppressor T RANSIENT P ROTECTION P RODUCTS Definition of Terms: Clamp Voltage – The voltage at which the TVSF0603 device stabilizes during the transition from high to low impedance. This is the voltage experienced by the circuit, after stabilizing, for the duration of the ESD transient. Trigger Voltage – The voltage at which the TVSF0603 device begins to conduct. When the ESD threat voltage reaches this level, the TVSF0603 device begins the transition from high impedance to low impedance, shunting the ESD energy to ground. Threat Voltage – The voltage that the test equipment is set to operate (i.e., the voltage across the discharge capacitor). Peak Current – The maximum instanteneous current level that a device will receive. IEC-61000-4-2 states that the peak current should be 30 A at 8 kV ESD and 45 A at 15 kV ESD. Product Dimension EIA SIZE L W H T R TVSF0603 mm (inches) 1.60 ± 0.10 (.063 ± .004) 0.80 ± 0.10 (.031 ± .004) 0.50 ± 0.10 (.020 ± .004) 0.30 ± 0.20 (.012 ± .008) 0.70 ± .10 (.028 ± .004) Tape-and-Reel Specification W L HT R Recommended Solder Pad Outline (per IPC-SM-782) 0.6 min (.023 min) 1.1 ref (.043 ref) 1.0 max (.039 max) 9.0±1.5 (.354±.059) 2.0±0.75 (.079±.030) 60.0±1.5 (2.362±.059) 178.0±2.0 (7.008±.080)21±0.8 (.827±.032) 2.0±0.5 (.080±.020) 13.0±0.5 (.512±.020) B 4.0±0.10 (.059±.004) 4.0±0.10 (.157±.004) 2.0±0.05 (.079±.002) 8.0±0.30 (.315±.012) 1.75±0.10 (.069±.004) 3.5±0.05 (.138±.002) mm (inches) Dimension 0603 A 1.80±0.20 (.071±.008) B .90±.20 (.035±.008) A PPAACCKKAAGGEEDDAATTAA

Transient Protection Products Group 8700 East Thomas Rd., PO Box 1390, Scottsdale AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 http://www.microsemi.com/tvs Page 3Copyright  2004 TVSF0603.PDF 02-04-2004 REV A WWW.Microsemi .COM TVSF0603 “FemtoFarad” Polymer ESD Suppressor T RANSIENT P ROTECTION P RODUCTS Part Numbering Part Numbering TVSF devices are not individually marked, but labeled on the tape-and-reel unit. Components are symmetrically bi-directional, hence no polarity marking is required. Pick-and- Place Assembly TVSF devices have a slightly rounded top that is inherent in their fabrication. This slight radius does not hinder standard pi ck-and- place assembly methods. Test Methods Multiple test methods are often required for surge characterization and withstand verification. Results may vary according to test method since secondary effects of the Electrical and Magnetic (E and H) fields on instrumentation and non-shielded circuits may produce undesired results. This is particularly observed below 3 kV where rise times in the 100 ps range have been reported pr oducing electromagnetic conditions equivalent to 30 kV/ns. ESD Open Air / Contact Discharge This fast rise pulse, characterized in IEC 61000-4-2, can produce peak currents up to 45A with voltage levels of 15 kV. Contac t discharge is the recommended method of test because of its repeatability; however, real world ESD events are open-air human bod y discharges. Air discharges introduce pre-corona discharge with E and H fields that allow energy to leak through narrow vents a nd radiate from isolated circuit and enclosure segments. A TVSF device may be very capable of providing protection from ESD, but its function can be nullified by poor board layout and inadequate shielding. ESD surges on a conductor have been observed to elect ro- magnetically bypass suppressors causing circuit upset or failure. Shielding may be required for supplementing suppressor prote ction devices. Transmission Line Pulse (TLP) The Transmission Line Pulse tester implements a controlled impedance cable to deliver a square-wave current pulse. The advanta ge of this technique is that the constant current of the square wave allows the behavior of the protection structure to be more accur ately studied. The actual implementation of this technique produces a waveform that has a slightly slower rise time than the ESD pulse but can be correlated to deliver approximately the same surge current and energy. This controlled impedance pulse provides a more accurat e depiction of the trigger voltage of the device because of the reduced voltage overshoot caused by a fast-rising transient and t he reactive components of the test fixture. FemtoFarad TVSF 0603 -TR1 Device Designator Device Configuration Tape-and-Reel 5,000 pcs DDEESSCCRRIIPPTTIIOONN

Transient Protection Products Group 8700 East Thomas Rd., PO Box 1390, Scottsdale AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 http://www.microsemi.com/tvs Page 6Copyright  2004 TVSF0603.PDF 02-04-2004 REV A WWW.Microsemi .COM TVSF0603 “FemtoFarad” Polymer ESD Suppressor T RANSIENT P ROTECTION P RODUCTS Device Applications TVSF devices protect signal line circuits from ESD by placing them in a shunt-connected manner from line to ground as illustrat ed below. These devices are not applicable on lines where lightning or load-switching transients are present. TVSF devices are ideal for use in computers and computer-related equipment, such as modems, keyboards, and printers. They also find applications in portable ele ctronic equipment such as mobile telephones, test equipment, and card scanners. Typical Applications Note: Although diode symbols are shown in opposite directions to represent the polymer ESD suppressor, it is not a semiconductor diode. It is instead a polymer based thick film material on a ceramic substrate creating a bi-directional response in a reliable surface mount package. DDEESSCCRRIIPPTTIIOONN RF Amplifier Antenna TVFS0603 USB CONTROLLER USB PORT Data Data TVSF0603 (2)

Transient Protection Products Group 8700 East Thomas Rd., PO Box 1390, Scottsdale AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 http://www.microsemi.com/tvs Page 7Copyright  2004 TVSF0603.PDF 02-04-2004 REV A WWW.Microsemi .COM TVSF0603 “FemtoFarad” Polymer ESD Suppressor T RANSIENT P ROTECTION P RODUCTS NNOOTTEESS