TVB270SC_04 MACOM | Alldatasheet

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Raychem Circuit Protection

308 Constitution Drive

Menlo Park, CA 94025-1164 Phone: 800-227-4856 Fax: 800-227-4866 SiBar Thyristor Surge Protectors PRODUCT: TVB270SC DOCUMENT: SCD 24271 PCN: 179059 REV LETTER: D REV DATE: AUGUST 24, 2004 PAGE NO.: 1 OF 2 Specification Status: RELEASED PHYSICAL DESCRIPTION A B C D** H J K MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX P S REF MIN MAX mm: 0.51 5.21 5.59 *Rounded off approximation ** D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P Other Physical Characteristics Form Factor: SMB (Surface Mount, JEDEC DO-214AA Package) Lead Material: Tin/Lead Finish Encapsulation Material: Epoxy, meets UL94 V-0 requirements Solderability: per MIL-STD-750, Method 2026 Solder Heat Withstand: per MIL-STD-750, Method 2031 Solvent Resistance: per MIL-STD-750, Method 1022 Mechanical Shock: per MIL-STD-750, Method 2016 Vibration: per MIL-STD-750, Method 2056 Tape and Reel packaging per EIA 481-1 Agency Recognition: UL Precedence: Th is specification takes precedence over documents referenced herein. CAUTION: Operation beyond t he rated voltage or current may result in rupture, electrical arcing or flame. Materials Information ELV Compliant © 2004 Tyco Electronics Corporation. All rights reserved. Marking: Date Code Device Code REBD Raychem Logo

Raychem Circuit Protection Menlo Park, CA 94025-1164 Phone: 800-227-4856 Fax: 800-227-4866 SiBar Thyristor Surge Protectors PRODUCT: TVB270SC DOCUMENT: SCD 24271 PCN: 179059 REV LETTER: D REV DATE: AUGUST 24, 2004 PAGE NO.: 2 OF 2 DEVICE RATINGS @ 25º C (Both Polarities) Parameter Symbol Value Units Repetitive Off-State Voltage, Maximum at ID = 5 µA VDM 270 V Non-Repetitive Peak Telcordia GR-1089 CORE 10x1000 µs Impulse Current TIA-968 lightning Type A Metallic 10/560 µs Double exponential TIA-968 lightning Type A Longit. 10/160 µs Waveform Telcordia GR-1089 Intrabuilding 2/10 µs (Notes 1 and 2) IEC61000-4-5 (Voc 1.2/50us) 8/20 µs ITU-T K.20/K.21 (Voc 10/700us) 5/310 µs TIA-968 lightning Type B (Voc 9/720us) 5/320 µs IPP IPP2 IPP3 IPP4 IPP5 IPP6 IPP7 100 150 200 500 400 100 100 A A A A A A A Critical Rate of Rise of On-State Current Power Pulse Amplifier, C=30µF, V=600V Maximum 2x10 µsec waveform, VOC=2.5kV, ISC=500A peak di/dt di/dt 500 330 A/µs A/µs DEVICE THERMAL RATINGS Storage Temperature Range TSTG -55 to 150 ºC Operating Temperature Range Blocking or conducting state TA -40 to 125 ºC Overload Junction Temperature Maximum; Conducting state only TJ +150 ºC Maximum Lead Temperature for Soldering Purpose; for 10 seconds TL +260 ºC ELECTRICAL CHARACTERISTICS Both polarities (TJ @ 25ºC unless otherwise noted) Characteristics Symbol Min Typ Max Units Breakover Voltage (+25°C) (dv/dt = 0.4kVµs, ISC=900mA,VDC = 500V (both polarities)) VBO ---- 310 365 V Breakover Voltage Temperature Coefficient dVBO/dTJ ---- 0.1 ----- %/ºC Off-State Current (VD1=50V) (VD2=VDM) ID1 ID2=IDM ---- ---- ----- ----- 2.0 5.0 µA µA On-State Voltage (IT=1A) (PW ≤ 300 µsec, Duty Cycle ≤ 2% (Note 2)) Breakover Current IBO ---- ----- 800 mA Holding Current (Note 2) IH 150 ---- ---- mA Peak Onstage Surge Current (Measured @ 60Hz, 1 cycle, 600V) ITSM 60 ---- ---- A Critical Rate of Rise of Off-State Voltage (Linear waveform, VD = 0.8 X Rated VBO, TJ= +25ºC) dv/dt 2000 ---- ---- V/µs Capacitance (f=1.0 Mhz, 50Vdc bias, 1Vrms) (f=1.0 Mhz, 2Vdc bias, 1Vrms) ---- ---- 110 ---- ---- pF pF Note 1. Allow cooling before test second polarity Note 2. Measured under pulse conditions to reduce heating VOLTAGE-CURRENT CHARACTERISTIC