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Raychem Circuit Protection SiBar Thyristor Surge Protectors 339 SiBar Thyristor Surge Protectors Raychem Circuit Protection’s SiBar thyristor surge protection devices are designed to help pro- tect sensitive telecommunication equipment from the hazards caused by lightning, power con- tact, and power induction. These devices have a high electrical surge capability to help protect against transient faults and a high off-state impedance, rendering them virtually transparent during normal system operation. SiBar thyristor surge protectors are designed to assist telecom- munication and computer tele- phony equipment in meeting the applicable requirements and industry specifications. Benefits:
- Helps provide protection for sensitive telecom electronic equipment
- Low leakage current
- Low power dissipation
- Fast, reliable operation
- No wear-out mechanisms
- Helps designers meet world- wide telecom standards
- Helps reduce warranty and service costs
- Easy installation
- Helps improve power efficiency of equipment Features:
- Bidirectional transient voltage protection
- High off-state impedance
- Low on-state voltage
- High surge capability
- Short-circuit failure mode
- Surface-mount technology
- Lead-free leads available on all parts Applications:
- Modems
- Fax machines
- PBX systems
- Phones
- POS systems
- Analog and digital linecards
- Other customer premise and network equipment requiring protection Surge Capability, Maximum Off-State Voltage, Package Size Devices in this section are grouped by: 339_04RaychemTycoX 9/14/04 11:52 AM Page 339
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Selection Guide for SiBar Thyristor Surge Protectors Step 1.Determine the circuit’s operating parameters. Fill in the following information about the circuit: Maximum DC supply voltage (V Step 2.Calculate the maximum operating voltage of your system. Maximum operating voltage = V DC Max. + (1.414 x VAC Max.) Refer to Table V1 to select a SiBar thyristor device with a maximum off- state voltage (VDM ) rating that is close to, but greater than, the maxi- mum operating voltage of your system. Step 3.Verify that the system voltage damage threshold is greater than the rated maximum breakover voltage (VBO ). Refer to Table V1 to confirm that the maximum breakover voltage of the device you selected in Step 2 is less than the system voltage damage threshold.
Raychem Circuit Protection SiBar Thyristor Surge Protectors 341 Step 4.Verify that the maximum fault current of the system and its duration or the fault current defined in the industry specification(s) are less than the surge current rating of the device selected. For help in determining which indus- try specifications may apply, refer to the Protection Application Guide on the next page. Refer to Table V2 for SiBar thyristor surge current ratings applicable to TIA 968-A (FCC Part 68), Telcordia GR-1089, ITU K.20, K.21, K.45 industry specifications. Step 5.Verify that the maximum system operating current is less than the minimum hold current rating (I H ) in Table V1 for the device selected. Using Figure V4, verify that IH is greater than the maximum system operating current over the entire ambient operating temperature range. (As with I H , VDM and VBO also vary with ambient temperature, to a lesser degree. Figures V2 and V3 can be used to determine that the device selected continues to meet your requirements over the ambient operat- ing temperature range.) Step 6.Verify that the dimensions in Table V4 for the SiBar thyristor device are compatible witht the application’s space requirements. Selection Guide for SiBar Thyristor Surge Protectors continued
342 SiBar Thyristor Surge Protectors Raychem Circuit Protection
To use this guide, follow the steps below: 1. Select your equipment type from the guide below. 2. Select the type of protection depending on the agency and regional specifications in the second column. Protection Application Guide for SiBar Thyristor Surge Protectors PolySwitch Resettable Devices Region/ SiBar Thyristor Key Device Selection Citeria Application Specification Surge Protectors 1 Small Footprint Low Resistance Fast Time-to-Trip Customer premises equipment, North America TVBxxxSA(-L) or TR600-150 TR600-150-RA TR600-150-RB IT equipment TIA-968-A (FCC Part 68), TVAxxxSA(-L) with TS600-170 TS600-200-RA TS600-170 UL 1950, Analog modems, V.90 modems, UL 1459 TR/TS; TVBxxxSC(-L) ISDN modems, xDSL modems, with TS/TR or fuse ADSL splitters, phone sets, fax machines, Europe/Asia/ TVBxxxSA(-L) TR250-120 TR250-180U TR250-120T-R2 answering machines, caller ID, internet South America TVAxxxSA(-L) TR250-145 TS250-130-RA TS250-130-RB appliances, PBX systems, POS terminals, ITU K.21 TS250-130 TSV250-130 wall plugs TSV250-130 Access network equipment (*) North America TVBxxxSC(-L) TR600-150-RA TR600-160-RA TR600-150-RB Remote terminals, line repeaters, Telcordia GR-1089 TS600-200-RA TS600-200-RA TS600-170 multiplexers, cross-connects, WAN equipment Europe/Asia/ TVBxxxSA(-L) TR250-120 TR250-180U TR250-120T-R2 South America TVAxxxSA(-L) TR250-145 TS250-130-RA TS250-130-RB ITU K.45 TS250-130 TSV250-130 TSV250-130 Central office switching equipment (*) North America TVBxxxSC(-L) TR600-150-RA TR600-160-RA TR600-150-RB Analog/POTS linecards, ISDN linecards, Telcordia GR-1089 TS600-200-RA TS600-200-RA TS600-170 xDSL modems, ADSL/VDSL splitters, T1/E1 linecards, multiplexers, Europe/Asia/ TVBxxxSA(-L) TR250-120 TR250-180U TR250-120T-R2 CSU/DSU, servers South America TVAxxxSA(-L) TR250-145 TS250-130-RA TS250-130-RB ITU K.20 TS250-130 TSV250-130 TSV250-130 Primary protection modules (*) North America N/A TR250-180U TR250-180U TR250-180U MDF modules, Network Interface Telcordia GR-974 Devices (NID) Europe/Asia/ N/A TGC250-120T TC250-145T TGC250-120T South America TR250-120T TR250-145-RA TR250-120T-R2 ITU K.20 TS250-130 TS250-130-RA TS250-130-RB TSV250-130 TSV250-130 Short-haul/intrabuilding communications North America TVBxxxSA(-L) TSL250-080 TR250-145 TSV250-130 equipment (*) Telcordia GR-1089 TVAxxxSA(-L) TR250-120 TR250-180U TR250-120T-R2 LAN equipment, VoIP cards, cable intrabuilding TS250-130 TS250-130-RA TSL250-080 telephony NIU’s, wireless local loop TSV250-130 handsets Europe/Asia/ TVBxxxSA(-L) TR250-120 TR250-180U TR250-120T-R2 South America TVAxxxSA(-L) TR250-145 TS250-130-RA TS250-130-RB ITU K.21 TS250-130 TSV250-130 TSV250-130 LAN intrabuilding power cross protection TVBxxxSA(-L) TSL250-080 TSL250-080 TSL250-080 LAN equipment, VoIP cards, IP phones TVAxxxSA(-L) TVAxxxSA IEEE 802.3 Power over LAN protection N/A miniSMDC014 SMD030-2018 SMD030-2018 Powered ethernet switches and terminals, SMD030 IP phones, wireless LAN base stations, microcellular base stations, VoIP cards Cable telephony powering systems N/A BBR550 BBR750 BBR550 Power passing taps Notes:This list is not exhaustive. Raychem Circuit Protection welcomes our customers’ input for additional application ideas. 1For more information on Raychem Circuit Protection PolySwitch resettable devices, refer to telecommunication and networking devices on page 301. *For improved line balance in these applications, resistance-matched parts are recommended. See Telecom and Networking section, page 301 for details. (-L) Lead-free leaded devices are also applicable for these applications.
Raychem Circuit Protection SiBar Thyristor Surge Protectors 343 Table V1. Product Electrical Characteristics for SiBar Thyristor Surge Protectors (-L: Lead-free leaded devices) TVA270SA 270 365 150 3.0 22 TVA270SA-L 270 365 150 3.0 22 TVB058SA-L 58 78 150 4.0 43 TVB170SA 170 265 150 4.0 20 TVB170SA-L 170 265 150 4.0 20 TVB200SA 200 320 150 4.0 20 TVB200SA-L 200 320 150 4.0 20 TVB270SA 270 365 150 4.0 20 TVB270SA-L 270 365 150 4.0 20 TVB300SA-L 300 400 150 4.0 20 TVB200SB-L 200 320 150 4.0 25 TVB270SB-L 270 365 150 4.0 25 TVB300SB-L 300 400 150 4.0 25 TVB170SC 170 265 150 4.0 50 TVB170SC-L 170 265 150 4.0 50 TVB200SC 200 320 150 4.0 50 TVB200SC-L 200 320 150 4.0 50 TVB270SC 270 365 150 4.0 50 TVB270SC-L 270 365 150 4.0 50 TVB300SC-L 300 400 150 4.0 50 Notes: All electrical characteristics are measured at 25°C. VDM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA. VBO Measured at 100V/µs. C1 measured at 1 MHz with a 50 VDC bias. Table V2. Surge Current Rating for SiBar Thyristor Surge Protectors (-L: Lead-free leaded devices) IEC 61000-4-5*ITU K.20/21/45* ITSM Part I pp(A) I pp(A) I pp(A) I pp(A) I pp(A) I pp(A) I pp(A) Min. di/dt dV/dt Description 5 x 320 µs 10 x 560 µs 10 x 160 µs 10 x 1000 µs 2 x 10 µs 8 x 20 µs 5 x 310 µs (A) (A/µs) (V/µs) TVA270SA 90 70 100 50 150 150 90 22 500 2000 TVA270SA-L 90 70 100 50 150 150 90 22 500 2000 TVB058SA-L 55 55 70 50 150 150 55 22 500 2000 TVB170SA 90 70 100 50 150 150 90 22 500 2000 TVB170SA-L 90 70 100 50 150 150 90 22 500 2000 TVB200SA 90 70 100 50 150 150 90 22 500 2000 TVB200SA-L 90 70 100 50 150 150 90 22 500 2000 TVB270SA 90 70 100 50 150 150 90 22 500 2000 TVB270SA-L 90 70 100 50 150 150 90 22 500 2000 TVB300SA-L 90 70 100 50 150 150 90 22 500 2000 TVB200SB-L 100 100 150 80 250 250 100 30 500 2000 TVB270SB-L 100 100 150 80 250 250 100 30 500 2000 TVB300SB-L 100 100 150 80 250 250 100 30 500 2000 TVB170SC 100 150 200 100 500 400 150 60 500 2000 TVB170SC-L 100 150 200 100 500 400 150 60 500 2000 TVB200SC 100 150 200 100 500 400 150 60 500 2000 TVB200SC-L 100 150 200 100 500 400 150 60 500 2000 TVB270SC 100 150 200 100 500 400 150 60 500 2000 TVB270SC-L 100 150 200 100 500 400 150 60 500 2000 TVB300SC-L 100 150 200 100 500 400 150 60 500 2000 Notes: *Lightning current wave forms for applicable industry specification. ITSM, peak on-state surge current is measured at 60 Hz, one cycle. di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax=600V; C=30 µF). dV/dt: critical rate-of-rise of off-stage voltage (linear wave form, VD = rated VBO, Tj = 25°C). NEW NEW NEW NEW NEW NEW NEW NEW NEW NEW NEW NEW TIA-968-A (FCC Part 68)* Telcordia GR-1089* 343_04RaychemTycoX 9/15/04 8:12 AM Page 343
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Note: The voltage current (V-I) is useful in depicting the electrical characteristics of the SiBar thyristor surge protectors in relation to each other. Table V3. Parameter Definitions for SiBar Thyristor Surge Protectors Symbol Parameter Definition VBO Breakover voltage Maximum voltage across the device at breakdown measured under a specified voltage and current rate of rise. IBO Breakover current Instantaneous current flowing at the breakover voltage (V BO ). IH Hold current Minimum current required to maintain the device in the on-state. IT On-state current Current through the device in the on-state condition. VT On-state voltage Voltage across the device in the on-state condition at a specified current (I T). VDM Maximum off-state Maximum DC voltage that can be applied to the device while maintaining voltage it in the off-state condition. IDM Off-state current Maximum DC value of current that results from the application of the maximum off-state voltage. Ipp Peak pulse current Rated peak pulse current of specified amplitude and waveshape that may be applied without damage. di/dt, dv/dt Critical rate of rise of Maximum current and voltage rate of rise the device can withstand without damage. on-state current and voltage VDM VBOVT IDM IBO IH IT IPP I V Figure V1. Voltage-Current Characteristics
Raychem Circuit Protection SiBar Thyristor Surge Protectors 345 Figures V2–V5. Typical Electrical Characteristics vs. Temperature -50 -25 0 25 50 75 100 125 150 115% 120% 110% 105% 100% 95% 85% 90% Temperature (°C) Percentage of VDM at 25° C Figure V2. Off-state Voltage vs. Temperature -50 -25 0 25 50 75 100 125 150 200% 180% 160% 140% 120% 100% 80% 60% 40% 20% Temperature (°C) Hold current vs. temperature Percentage of IH at 25° C Figure V4. Hold Current vs. Temperature -50 -25 0 25 50 75 100 125 150 115% 110% 105% 100% 95% 90% Temperature (°C) Percentage of VBO at 25°C Figure V3. Breakover Voltage vs. Temperature 0.001 -25 0 25 50 75 100 125 150 Temperature (°C) IDM (mA) 0.01 0.1 100 Figure V5. Off-state Current vs. Temperature
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Table V4. Product Dimensions for SiBar Thyristor Surge Protectors in Millimeters (Inches) Dimension A B C D* H J K P S TVBxxxSC(-L) Notes: *D dimension is measured within dimension P . TVA series devices use industry standard SMA package type. TVB series devices use industry standard SMB package type. All devices are bidirectional and may be oriented in either direction for installation. A S KP J H C D B Figure V6. Physical Description for Dimensions Physical Description for Dimensions for SiBar Thyristor Surge Protectors 346_04RaychemTycoX 9/14/04 3:31 PM Page 346
Raychem Circuit Protection SiBar Thyristor Surge Protectors 347 Table V5. Physical Characteristics and Environmental Specifications for SiBar Thyristor Surge Protectors Lead material Tin/lead finish or matte tin finish(-L devices) Encapsulating material Epoxy, meets UL94V-0 requirements Solderability per MIL-STD-750, Method 2026 Solder heat withstand per MIL-STD-750, Method 2031 Solvent resistance per MIL-STD-750, Method 1022 Mechanical shock per MIL-STD-750, Method 2016 Vibration per MIL-STD-750, Method 2056 Storage temperature (°C) –55 to 150 Operating temperature (°C) –40 to 125 Junction temperature (°C) 150 Maximum lead temperature for soldering pupose; 10 seconds (°C) +260 Table V6. Reliability Tests for SiBar Thyristor Surge Protectors Test Conditions Duration High temperature, reverse bias +100˚C, 50 V DC bias 1000 hours High humidity, high temperature, reverse bias 85% RH, +85˚C, 50 V DC bias 1000 hours High temperature storage life +150˚C 1000 hours Temperature cycling -65˚C to +150˚C, 15 minute dwell 1000 cycles Autoclave 100% RH, +121˚C, 15 PSI 96 hours Table V7. Packaging and Marking Information for SiBar Thyristor Surge Protectors (-L: Lead-free leaded devices) Recommended Pad Layout (mil/inch) Part Tape and Reel Standard Part Dimension Dimension Dimension Agency Description Quantity Package Marking A (Nom.) B (Nom.) C (Nom.) Recognition NEW NEW NEW NEW NEW NEW 347_04RaychemTycoX 9/15/04 7:43 AM Page 347
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SiBar thyristor devices are com- patible with standard reflow and wave soldering techniques. Solder Reflow
- Recommended reflow methods: IR, vapor phase oven, hot air oven.
- Always preheat the device to prevent excessive thermal shock and stress.
- Recommended maximum paste thickness of 0.25mm (0.010 in.).
- Devices may be cleaned using standard industry methods and solvents. Solder Rework
- Use standard industry practices for the SiBar Thyristor Surge Protectors. Solder Reflow and Rework Recommendations for SiBar Thyristor Surge Protectors Preheating Soldering Cooling 300 250 200 150 100 30–90 5 120 Temperature (°C) Time (s) Figure V8 Agency Recognition for SiBar Thyristor Surge Protectors UL File # E179610 Part Numbering System for SiBar Thyristor Surge Protectors TV S Package type: A: SMA package B: SMB package V DM (max. off-state voltage indicator) Surge current rating A, B, C, refer to Table V2 A Lead-free leads (matte tin finish) -L270B Product Family Recommended Pad Layout for SiBar Thyristor Surge Protectors A B C B Figure V7. Recommended Pad Layout
Raychem Circuit Protection SiBar Thyristor Surge Protectors 349 Table V8. Tape and Reel Specifications for SiBar Thyristor Surge Protectors SiBar thyristor devices are supplied on tape and reel per EIA481-1 standard. (See Figures V9 and V10 for details.) TVB Series TVA Series Description Dimensions (mm) Tolerance (mm) Dimensions (mm) Tolerance (mm) E2 min. 9.85 — 9.85 — T max. 0.6 — 0.6 — Leader min. 390 — 390 — Trailer min. 160 — 160 — Cover tape Center lines of cavity T D 0 P2 Embossment F W P1T1 Figure V9. EIA Referenced Taped Component Dimensions for SiBar Thyristor Surge Protectors
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- Operation beyond the maximum ratings or improper use may result in device damage and possible electrical arcing and flame.
- The devices are intended for protection against occasional overvoltage fault conditions and should not be used when repeated fault conditions or prolonged trip events are anticipated.
- Device performance can be impacted negatively if devices are handled in a manner inconsistent with recommended electronic, thermal, and mechanical procedures for electronic components. WARNING: A W 2 (measured at hub) W 1 (measured at hub) N (hub dia.) Figure V10. EIA Referenced Reel Dimensions for SiBar Thyristor ProtectorsReel Dimension A max. 330 N min. 50 W1 12.4 + 2.0, -0 W2 max. 18.4