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Document: SCD 27219 SiBar Thyristor Surge Protectors Status: Released © 2007 Tyco Electronics Corporation. All rights Reserved. 1 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVBxxxNSB-L Series Raychem Circuit Protection's SiBar thyristor surge protection devices are designed to help protect sensitive telecommunication equipment from the hazards caused by lightning, power contact, and power induction. These devices have a high electrical surge capability to help protect against transient faults and a high off-state impedance, rendering them vi rtually transparent during normal system operation. SiBar thyristor surge protectors are designed to assist telecommunication and computer telephony equipment in meeting the applicable requirements and industry specifications. Benefits:
- Helps provide protection for sensitive telecom electronic equipment
- Low leakage current
- Low power dissipation
- Fast, reliable operation
- No wear-out mechanisms
- Helps designers meet worldwide telecom standards
- Helps reduce warranty and service costs
- Easy installation
- Helps improve power efficiency of equipment Applications:
- Modems • Set top boxes
- Fax machines • POS systems
- Phones, answering machines • Analog an d digital linecards (xDSL, T1/E1...)
- PBX systems • Other customer pr emise and central office network equipment requiring protection Features:
- RoHS compliant
- Bidirectional crowbar transient voltage protection
- Voltage range: 58V- 320V with improved Vdrm/Vbo range
- High off-state impedance
- Low on-state voltage
- High surge capability
- Short-circuit failure mode
- Surface-mount technology
- DO-214AA SMB package
- 10 x 1000 μs 80A surge rating
- Helps equipment comply with TIA-968, Telcordia GR-1089 , IEC61000-4-5, ITU K.20/21/45
Document: SCD 27219 SiBar Thyristor Surge Protectors Status: Released © 2007 Tyco Electronics Corporation. All rights Reserved. 2 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVBxxxNSB-L Series Table SB2 – Surge Current Rating TIA-968 Telcordia GR-1089* IEC61000-4-5 ITU K.20/21/45* Type A Type B Part Number Ipp(A) 5 x 320 µs Ipp(A) 10 x 560 µs pp (A) 10 x 160 µs Ipp (A) 10 x 1000 µs Ipp (A) 2 x 10 µs Ipp (A) 8 x 20 µs IPP (A) 5 x 310 μs (VOC: 10 x 700μs) ITSM Min. (A) di/dt (A/µs) dV/dt (V/µs) TVBxxxNSB-L 100 100 150 80 250 250 100 30 500 2000 Notes: *Lightning current wave forms for applicable industry specification. I TSM, peak on-state surge current is measured at 60 Hz, one cycle. di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax = 600V; C = 30µF). dV/dt: critical rate-of-rise of off-stage voltage (linear wave form, V D = rated VBO, Tj = 25°C Table SB1 - Electrical Characteristics Part Number V DM Max. (V) V BO Max. (V) I H Min. (mA) V T Max. (V) C1 (Typ) 50VDC Bias C2 (Typ) 2VDC Bias Off-State Current VD2=VDM (μA) TVB058NSB-L 58 77 150 4 67 129 5 TVB065NSB-L 65 88 150 4 64 123 5 TVB075NSB-L 75 98 150 4 63 122 5 TVB090NSB-L 90 130 150 4 49 95 5 TVB120NSB-L 120 160 150 4 38 75 5 TVB140NSB-L 140 180 150 4 36 70 5 TVB170NSB-L 170 220 150 4 29 59 5 TVB180NSB-L 180 240 150 4 29 59 5 TVB190NSB-L 190 260 150 4 28 56 5 TVB220NSB-L 220 300 150 4 26 52 5 TVB275NSB-L 275 350 150 4 23 47 5 TVB320NSB-L 320 400 150 4 22 44 5 Notes: All electrical characteristics are measured at 25°C. V DM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA. V BO measured at 100V/µs. C1 measured at 1 MHz with a 50 V DC bias. C2 measured at 1MHz with a 2V DC bias.
Document: SCD 27219 SiBar Thyristor Surge Protectors Status: Released © 2007 Tyco Electronics Corporation. All rights Reserved. 3 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVBxxxNSB-L Series Table SB4 – Physical Characteristics and Environmental Specifications Lead material Matte tin finish (-L devices) Encapsulating material Epoxy, meets UL94V-0 requirements Solderability per MIL-STD-750, Method 2026 Solder heat withstand per MIL-STD-750, Method 2031 Solvent resistance per MIL-STD-750, Method 1022 Mechanical shock per MIL-STD-750, Method 2016 Vibration per MIL-STD-750, Method 2056 Storage temperature (°C) -55 to 150 Operating temperature (°C) -40 to 125 Junction temperature (°C) 175 Maximum Lead Temperature for Soldering Purpose; for 10s (°C) 260 Table SB3 – Dimensions in Millimeters A B C D* TVBxxxNSB-L H J K P S TVBxxxNSB-L Notes: *D dimension is measured within dimension P. TVB series devices use industry standard SMB package type. All devices are bidirectional and may be oriented in either direction for installation Table SB5 – Reliability Tests Test Conditions Duration High temperature, reverse bias +100°C, 50VDC bias 1000 hours High humidity, high temperature, reserse bias 85% RH, +85°C, 50VDC bias 1000 hours High temperature storage life +150°C 1000 hours Temperature cycling -65°C to +150°C, 15 minute dwell 1000 cycles Autoclave 100% RH, +121°C, 15 PSI 96 hours
Document: SCD 27219 SiBar Thyristor Surge Protectors Status: Released © 2007 Tyco Electronics Corporation. All rights Reserved. 4 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVBxxxNSB-L Series
Document: SCD 27219 SiBar Thyristor Surge Protectors Status: Released © 2007 Tyco Electronics Corporation. All rights Reserved. 5 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVBxxxNSB-L Series 308 Constitution Drive, MS R21/2A Tel (800) 227-7040 www.circuitproection.com Menlo Park, CA USA 94025-1164 (650) 361-6900 www.circuitprotection.com.hk (Chinese) Fax (650) 361-2508 www.circuitprotection.jp (Japanese) Raychem, PolySwitch, SiBar, TE Logo and Tyco Electronics are trademarks. All other trademarks and copyrights are property of their respective owners. Table SB6 – Packaging and Marking Information Recommended Pad Layout (millimeters/inchs) Part
Description
A (Nom.) Dimension B (Nom.) Dimension C (Nom.) Agency Recognition* *UL497B, File # E179610