TVA170NSA-L MACOM | Alldatasheet

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Document: SCD 27217 SiBar Thyristor Surge Protectors Status: Released © 2007 Tyco Electronics Corporation. All rights Reserved. 1 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series SiBar thyristor surge protection devices help protect sensitive telecommunication equipment from the hazards caused by lightning, power contact, and powe r induction. These devices have a high electrical surge capability to help protect against transient faults and a high off-state impedance, rendering them virtually transparent during normal system operation. SiBar thyristor surge protectors assist designers to meet telecommunication and computer telephony equipment requirements and industry specifications. Benefits:

  • Helps provide protection for sensitive telecom electronic equipment
  • Low leakage current
  • Low power dissipation
  • Fast, reliable operation
  • No wear-out mechanisms
  • Assists designers to meet worldwide telecom standards
  • Helps reduce warranty and service costs
  • Easy installation
  • Helps improve power efficiency of equipment Features:
  • RoHS compliant
  • Bidirectional crowbar transient voltage protection
  • Voltage range: 170V – 275V with improved Vdrm/Vbo range
  • High off-state impedance
  • Low on-state voltage
  • High surge capability
  • Short-circuit failure mode
  • Surface-mount technology
  • DO-214AC SMA package
  • 10 x 1000 μs 50A surge rating
  • Helps equipment comply with TIA-968, Telcordia GR-1089, IEC61000-4-5, ITU K.20/21/45 Applications:
  • Modems • Set top boxes
  • Fax machines • POS systems
  • Phones, answering machines • Analog an d digital linecards (xDSL, T1/E1...)
  • PBX systems • Other customer premise and cent ral office network equipment requiring protection

Document: SCD 27217 SiBar Thyristor Surge Protectors Status: Released © 2007 Tyco Electronics Corporation. All rights Reserved. 2 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series Table SB1 - Electrical Characteristics Part Number V DM Max. (V) V BO Max. (V) I H Min. (mA) V T Max. (V) C1 (Typ) 50VDC Bias C2 (Typ) 2VDC Bias Off-State Current VD2=VDM (μA) TVA170NSA-L 170 220 150 4 20 39 5 TVA220NSA-L 220 300 150 4 17 33 5 TVA275NSA-L 275 350 150 4 16 31 5 Notes: All electrical characteristics are measured at 25°C. V DM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA. V BO measured at 100V/µs. C1 measured at 1 MHz with a 50 V DC bias. C2 measured at 1MHz with a 2V DC bias. Table SB2 – Surge Current Rating TIA-968 Telcordia GR-1089* IEC61000-4-5 ITU K.20/21/45* Type A Type B Part Number Ipp(A) 5 x 320 µs Ipp(A) 10 x 560 µs pp (A) 10 x 160 µs Ipp (A) 10 x 1000 µs Ipp (A) 2 x 10 µs Ipp (A) 8 x 20 µs IPP (A) 5 x 310 μs (VOC: 10 x 700μs) ITSM Min. (A) di/dt (A/µs) dV/dt (V/µs) TVAxxxNSA-L 90 70 100 50 150 150 90 22 500 2000 Notes: *Lightning current wave forms for applicable industry specification. I TSM, peak on-state surge current is measured at 60 Hz, one cycle. di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax = 600V; C = 30µF). dV/dt: critical rate-of-rise of off-sta ge voltage (linear wave form, VD = rated VBO, Tj = 25°C

Document: SCD 27217 SiBar Thyristor Surge Protectors Status: Released © 2007 Tyco Electronics Corporation. All rights Reserved. 3 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series Table SB4 – Physical Characteristics and Environmental Specifications Lead material Matte tin finish (-L devices) Encapsulating material Epoxy, meets UL94V-0 requirements Solderability per MIL-STD-750, Method 2026 Solder heat withstand per MIL-STD-750, Method 2031 Solvent resistance per MIL-STD-750, Method 1022 Mechanical shock per MIL-STD-750, Method 2016 Vibration per MIL-STD-750, Method 2056 Storage temperature (°C) -55 to 150 Operating temperature (°C) -40 to 125 Junction temperature (°C) 175 Maximum Lead Temperature for Soldering Purpose; for 10s (°C) 260 Table SB3 – Dimensions in Millimeters A B C D TVAxxxNSA-L H J K P S TVAxxxNSA-L Notes: *D dimension is measured within dimension P. TVA series devices use industry standard SMA package type. All devices are bidirectional and may be oriented in either direction for installation Table SB5 – Reliability Tests Test Conditions Duration High temperature, reverse bias +100°C, 50VDC bias 1000 hours High humidity, high temperature, reverse bias 85% RH, +85°C, 50VDC bias 1000 hours High temperature storage life +150°C 1000 hours Temperature cycling -65°C to +150°C, 15 minute dwell 1000 cycles Autoclave 100% RH, +121°C, 15 PSI 96 hours

Document: SCD 27217 SiBar Thyristor Surge Protectors Status: Released © 2007 Tyco Electronics Corporation. All rights Reserved. 4 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series

Document: SCD 27217 SiBar Thyristor Surge Protectors Status: Released © 2007 Tyco Electronics Corporation. All rights Reserved. 5 Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series 308 Constitution Drive, MS R21/2A Tel (800) 227-7040 www.circuitproection.com Menlo Park, CA USA 94025-1164 (650) 361-6900 www.circuitprotection.com.hk (Chinese) Fax (650) 361-2508 www.circuitprotection.jp (Japanese) Raychem, PolySwitch, SiBar, TE Logo and Tyco Electronics are trademarks. All other trademarks and copyrights are property of their respective owners. Table SB6 – Packaging and Marking Information Recommended Pad Layout (millimeters/inchs) Part

Description

A (Nom.) Dimension B (Nom.) Dimension C (Nom.) Agency Recognition* * UL 497B, File # E179610 **UL Pending