30ATU06 THINKISEMI | Alldatasheet
Document overview
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Technical content
30.0 Amperes,600Volts SwitchMode Single Fast Recovery Epitaxial Diode
- Ultrafast Recovery Time
- Soft Recovery Characteristics
- Low Recovery Loss
- Low Forward Voltage
- High Surge Current Capability
- Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE 30ATU06 using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. 30ATU06 © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.08T Absolute Maximum Ratings Parameter Symbol Test Conditions Values Units Repetitive peak reverse voltage VRRM 600 V Continuous forward current IF(AV) Tc =110°C 30 ASingle pulse forward current IFSM Tc =25°C 240 Maximum repetitive forward current IFRM Square wave, 20kHZ 60 Operating junction Tj 175 °C Storage temperatures Tstg -55 to +175 °C TO-220AB(TO-220C-3L) Unit:mm 9.19 ±0.20 φ3.60 ±0.20 9.90 ±0.20 2.80 ±0.20 15.70 ±0.20 13.08 ±0.20 3.02 ±0.20 2.54typ 6.50 ±0.20 0.80 ±0.20 1.27 ±0.20 1.52 ±0.20 1.30 ±0.20 4.50 ±0.20 0.50 ±0.20 2.40 ±0.20 2.54typ LEFT PIN RIGHT PIN Note: Pins Left & Right must be electrically connected at the printed circuit board. BOTTOM SIDE HEAT SINK Internal Configuration
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.08T Thermal characteristics Electrical performance (typic) Electrical characteristics (Ta=25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ. Max. Units Breakdown voltage Blocking voltage VBR, VR IR=100µA 600 VForward voltage (Per Diode) VF IF=30A 1.30 1.60 IF=30A, Tj =125°C 1.05 1.40 Reverse leakage current(Per Diode) IR VR= VRRM 20 µA Tj=150°C, VR=600V 200 Reverse recovery time(Per Diode) trr IF=0.5A, IR=1A, IRR=0.25A 38 50 ns IF=1A,VR=30V, di/dt =200A/us 28 35 Paramter Symbol Typ Units Junction-to-Case RθJC ℃/W1.50 30ATU06