TSX711 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 31
Technical content
Datasheet sections
- 1 Package pin connections
- 2 Absolute maximum ratings and operating conditions
- 3 Electrical characteristics
- 4 Electrical characteristic curves
- 5 Application information
- 5.1 Operating voltages
- 5.2 Input pin voltage ranges
- 5.3 Rail-to-rail input
- 5.4 Rail-to-rail output
- 5.5 Input offset voltage drift over temperature
- 5.6 Long term input offset voltage drift
- 5.7 High values of input differential voltage
- 5.8 Capacitive load
- 5.9 PCB layout recommendations
- 5.10 Optimized application recommendation
- 5.11 Application examples
- 5.11.1 Oxygen sensor
- 5.11.2 Low-side current sensing
- 6 Package information
- 6.1 SOT23-5 package information
- 6.2 MiniSO8 package information
- 6.3 SO8 package information
- 7 Ordering information
- 8 Revision history
Features
Low input offset voltage: 200 µV max. Rail-to-rail input and output Low current consumption: 800 µA max. Gain bandwidth product: 2.7 MHz Low supply voltage: 2.7 - 16 V Unity gain stable Low input bias current: 50 pA max. High ESD tolerance: 4 kV HBM Extended temp. range: -40 °C to 125 °C Automotive qualification
Related products
See the TSX7191 and TSX7192 for higher speeds with similar precision See the TSX561 and TSX562 for low-power See the TSX631 and TSX632 for micro- power features See the TSX921 and TSX922 for higher speeds
Applications
Battery-powered instrumentation Instrumentation amplifier Active filtering DAC buffer High-impedance sensor interface Current sensing (high and low side)
Description
The TSX711, TSX711A, and TSX712 series of operational amplifiers (op amps) offer high precision functioning with low input offset voltage down to a maximum of 200 µV at 25 °C. In addition, their rail-to-rail input and output functionality allow these products to be used on full range input and output without limitation. This is particularly useful for a low-voltage supply such as 2.7 V that the TSX71x is able to operate with. Thus, the TSX71x has the great advantage of offering a large span of supply voltages, ranging from 2.7 V to 16 V. They can be used in multiple applications with a unique reference. Low input bias current performance makes the TSX71x perfect when used for signal conditioning in sensor interface applications. In addition, low- side and high-side current measurements can be easily made thanks to rail-to-rail functionality. High ESD tolerance (4 kV HBM) and a wide temperature range are also good arguments to use the TSX71x in the automotive market segment.
1 Package pin connections
Figure 1: Pin connections (top view)
Absolute maximum ratings and operating conditions TSX711, TSX711A, TSX712
2 Absolute maximum ratings and operating conditions
Table 1: Absolute maximum ratings (AMR) Symbol Parameter Value Unit VCC Supply voltage (1) 18 V Vid Differential input voltage (2) ±VCC mV Vin Input voltage (VCC-) - 0.2 to (VCC+) + 0.2 V Iin Input current (3) 10 mA Tstg Storage temperature -65 to 150 °C Rthja Thermal resistance junction to ambient (4) (5) SOT23-5 250 °C/W MiniSO8 190 SO8 125 Tj Maximum junction temperature 150 °C ESD HBM: human body model (6) 4000 V MM: machine model (7) 100 CDM: charged device model (8) 1500 Latch-up immunity 200 mA Notes: (1)All voltage values, except the differential voltage are with respect to the network ground terminal. (2)Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. See Section 5.7 for the precautions to follow when using the TSX711, TSX711A, and TSX712 with a high differential input voltage. (3)Input current must be limited by a resistor in series with the inputs. (4)Rth are typical values. (5)Short-circuits can cause excessive heating and destructive dissipation. (6)According to JEDEC standard JESD22-A114F. (7)According to JEDEC standard JESD22-A115A. (8)According to ANSI/ESD STM5.3.1 Table 2: Operating conditions Symbol Parameter Value Unit VCC Supply voltage 2.7 to 16 V Vicm Common mode input voltage range (VCC-) - 0.1 to (VCC+) + 0.1 Toper Operating free air temperature range -40 to 125 °C
3 Electrical characteristics
Table 3: Electrical characteristics at VCC+ = 4 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 ° C, and RL > 10 kΩ connected to VCC/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit Vio (TSX711, TSX712) Input offset voltage Vicm = VCC/2 200 μV Tmin < Top < 85 °C 365 Tmin < Top < 125 °C 450 Vio (TSX711A) Vicm = VCC/2 100 Tmin < Top < 85 °C 265 Tmin < Top < 125 °C 350 ΔVio/ΔT Input offset voltage drift (1) 2.5 µV/°C ΔVio Long term input offset voltage drift (2) T = 25 °C Iib Input bias current (1) Vout = VCC/2 1 50 pA Tmin < Top < Tmax 200 Iio Input offset current (1) Vout = VCC/2 1 50 Tmin < Top < Tmax 200 RIN Input resistance TΩ CIN Input capacitance 12.5 pF CMRR (TSX711, TSX711A) Common mode rejection ratio 20 log (ΔVic/ΔVio) Vicm = -0.1 to 4.1 V, Vout = VCC/2 84 102 dB Tmin < Top < Tmax 83 Vicm = -0.1 to 2 V, Vout = VCC/2 100 122 Tmin < Top < Tmax 94 CMRR (TSX712) Vicm = -0.1 to 4.1 V, Vout = VCC/2 80 98 Tmin < Top < Tmax 78 Vicm = -0.1 to 2 V, Vout = VCC/2 91 103 Tmin < Top < Tmax 86 Avd Large signal voltage gain RL= 2 kΩ, Vout = 0.3 to 3.7 V 110 136 Tmin < Top < Tmax 96 RL= 10 kΩ, Vout = 0.2 to 3.8 V 110 140 Tmin < Top < Tmax 96 VOH High level output voltage (voltage drop from VCC+) RL= 2 kΩ to VCC/2 28 50 mV Tmin < Top < Tmax RL= 10 kΩ tο VCC/2 6 15 Tmin < Top < Tmax
Symbol Parameter Conditions Min. Typ. Max. Unit VOL Low level output voltage RL= 2 kΩ tο VCC/2 23 50 mV Tmin < Top < Tmax RL= 10 kΩ tο VCC/2 5 15 Tmin < Top < Tmax Iout (TSX711, TSX711A) Isink Vout = VCC 35 45 mA Tmin < Top < Tmax 20 Isource Vout = 0 V 35 45 Tmin < Top < Tmax 20 Iout (TSX712) Isink Vout = VCC 25 37 Tmin < Top < Tmax 15 Isource Vout = 0 V 35 45 Tmin < Top < Tmax 20 ICC Supply current per amplifier No load, Vout = VCC/2 570 800 μA Tmin < Top < Tmax 900 GBP Gain bandwidth product RL = 10 kΩ, CL = 100 pF 1.9 2.7 MHz ɸm Phase margin RL = 10 kΩ, CL = 100 pF Degrees Gm Gain margin RL = 10 kΩ, CL = 100 pF dB SRn Negative slew rate Av = 1, Vout = 3 VPP, 10 % to 90 % 0.6 0.85 V/μs Tmin < Top < Tmax 0.5 SRp Positive slew rate Av = 1, Vout = 3VPP, 10 % to 90 % 1.0 1.4 Tmin < Top < Tmax 0.9 en Equivalent input noise voltage f = 1 kHz f = 10 kHz THD+N Total harmonic distortion + noise f =1 kHz, Av = 1, RL= 10 kΩ, BW = 22 kHz, Vin= 0.8 VPP 0.001 Notes: (1)Maximum values are guaranteed by design. (2)Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration (see Section 5.6).
Table 4: Electrical characteristics at VCC+ = 10 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 °C, and RL > 10 kΩ connected to VCC/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit Vio (TSX711, TSX712) Input offset voltage Vicm = VCC/2 200 μV Tmin < Top < 85 °C 365 Tmin < Top < 125 °C 450 Vio (TSX711A) Vicm = VCC/2 100 Tmin < Top < 85 °C 265 Tmin < Top < 125 °C 350 ΔVio/ΔT Input offset voltage drift (1) 2.5 μV/°C ΔVio Long term input offset voltage drift (2) T = 25 °C Iib Input bias current (1) Vout = VCC/2 1 50 pA Tmin < Top < Tmax 200 Iio Input offset current (1) Vout = VCC/2 1 50 Tmin < Top < Tmax 200 RIN Input resistance TΩ CIN Input capacitance 12.5 pF CMRR (TSX711, TSX711A) Common mode rejection ratio 20 log (ΔVic/ΔVio) Vicm = -0.1 to 10.1 V, Vout = VCC/2 90 102 dB Tmin < Top < Tmax 86 Vicm = -0.1 to 8 V, Vout = VCC/2 105 117 Tmin < Top < Tmax 95 CMRR (TSX712) Vicm = -0.1 to 10.1 V, Vout = VCC/2 88 100 Tmin < Top < Tmax 84 Vicm = -0.1 to 8 V, Vout = VCC/2 98 106 Tmin < Top < Tmax 92 Avd Large signal voltage gain RL= 2 kΩ, Vout = 0.3 to 9.7 V 110 140 Tmin < Top < Tmax 100 RL= 10 kΩ, Vout = 0.2 to 9.8 V 110 Tmin < Top < Tmax 100 VOH High level output voltage (voltage drop from VCC+) RL= 2 kΩ ο VCC/2 45 70 mV Tmin < Top < Tmax RL= 10 kΩ ο VCC/2 10 30 Tmin < Top < Tmax VOL Low level output voltage RL= 2 kΩ ο VCC/2 42 70 Tmin < Top < Tmax RL= 10 kΩ ο VCC/2 9 30 Tmin < Top < Tmax
Symbol Parameter Conditions Min. Typ. Max. Unit Iout (TSX711, TSX711A) Isink Vout = VCC 50 70 mA Tmin < Top < Tmax 40 Isource Vout = 0 V 50 69 Tmin < Top < Tmax 40 Iout (TSX712) Isink Vout = VCC 30 39 Tmin < Top < Tmax 15 Isource Vout = 0 V 50 69 Tmin < Top < Tmax 40 ICC Supply current per amplifier No load, Vout = VCC/2 630 850 μA Tmin < Top < Tmax 1000 GBP Gain bandwidth product RL = 10 kΩ, CL = 100 pF 1.9 2.7 MHz ɸm Phase margin RL = 10 kΩ, CL = 100 pF Degrees Gm Gain margin RL = 10 kΩ, CL = 100 pF dB SRn Negative slew rate Av = 1, Vout = 8 VPP, 10 % to 90 % 0.8 1 V/μs Tmin < Top < Tmax 0.7 SRp Positive slew rate Av = 1, Vout = 8 VPP, 10 % to 90 % 1.0 1.3 Tmin < Top < Tmax 0.9 en Equivalent input noise voltage f = 1 kHz f = 10 kHz THD+N Total harmonic distortion + noise f = 1 kHz, Av = 1, RL= 10 kΩ, BW = 22 kHz, Vin= 5 VPP 0.0003 Notes: (1)Maximum values are guaranteed by design. (2)Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration (see Section 5.6).
Table 5: Electrical characteristics at VCC+ = 16 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 °C, and RL > 10 kΩ connected to VCC/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit Vio (TSX711, TSX712) Input offset voltage Vicm = VCC/2 200 μV Tmin < Top < 85 °C 365 Tmin < Top < 125 °C 450 Vio (TSX711A) Vicm = VCC/2 100 Tmin < Top < 85 °C 265 Tmin < Top < 125 °C 350 ΔVio/ΔT Input offset voltage drift (1) 2.5 μV/°C ΔVio Long term input offset voltage drift (2) T = 25 °C 500 Iib Input bias current (1) Vout = VCC/2 1 50 pA Tmin < Top < Tmax 200 Iio Input offset current (1) Vout = VCC/2 1 50 Tmin < Top < Tmax 200 RIN Input resistance TΩ CIN Input capacitance 12.5 pF CMRR (TSX711, TSX711A) Common mode rejection ratio 20 log (ΔVic/ΔVio) Vicm = -0.1 to 16.1 V, Vout = VCC/2 94 113 dB Tmin < Top < Tmax 90 Vicm = -0.1 to 14 V, Vout = VCC/2 110 116 Tmin < Top < Tmax 96 CMRR (TSX712) Vicm = -0.1 to 16.1 V, Vout = VCC/2 94 107 Tmin < Top < Tmax 90 Vicm = -0.1 to 14 V, Vout = VCC/2 100 107 Tmin < Top < Tmax 90 SVRR Supply voltage rejection ratio 20 log (ΔVcc/ΔVio) Vcc = 4 to 16 V 100 131 Tmin < Top < Tmax 90 Avd Large signal voltage gain RL= 2 kΩ, Vout = 0.3 to 15.7 V 110 146 Tmin < Top < Tmax 100 RL= 10 kΩ, Vout = 0.2 to 15.8 V 110 149 Tmin < Top < Tmax 100 VOH High level output voltage (voltage drop from VCC+) RL= 2 kΩ (TSX711, TSX711A) 100 130 mV RL= 2 kΩ (TSX712) 70 130 Tmin < Top < Tmax 150 RL= 10 kΩ 16 40 Tmin < Top < Tmax
Symbol Parameter Conditions Min. Typ. Max. Unit VOL Low level output voltage RL= 2 kΩ 70 130 mV Tmin < Top < Tmax 150 RL= 10 kΩ 15 40 Tmin < Top < Tmax Iout (TSX711, TSX711A) Isink Vout = VCC 50 71 mA Tmin < Top < Tmax 45 Isource Vout = 0 V 50 68 Tmin < Top < Tmax 45 Iout (TSX712) Isink Vout = VCC 30 40 Tmin < Top < Tmax 15 Isource Vout = 0 V 50 68 Tmin < Top < Tmax 45 ICC Supply current per amplifier No load, Vout = VCC/2 660 900 μA Tmin < Top < Tmax 1000 GBP Gain bandwidth product RL = 10 kΩ, CL = 100 pF 1.9 2.7 MHz ɸm Phase margin RL = 10 kΩ, CL = 100 pF Degrees Gm Gain margin RL = 10 kΩ, CL= 100 pF dB SRn Negative slew rate Av = 1, Vout = 10 VPP, 10 % to 90 % 0.7 0.95 V/μs Tmin < Top < Tmax 0.6 SRp Positive slew rate Av = 1, Vout = 10 VPP, 10 % to 90 % 1 1.4 Tmin < Top < Tmax 0.9 en Equivalent input noise voltage f = 1 kHz f = 10 kHz THD+N Total harmonic distortion + Noise f = 1 kHz, Av = 1, RL= 10 kΩ, BW = 22 kHz, Vin= 10 VPP 0.0002 Notes: (1)Maximum values are guaranteed by design. (2)Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration (see Section 5.6).
4 Electrical characteristic curves
Figure 2: Supply current vs. supply voltage Figure 3: Input offset voltage distribution at VCC = 16 V Figure 4: Input offset voltage distribution at VCC = 4 V Figure 5: Input offset voltage vs. temperature at VCC = 16 V Figure 6: Input offset voltage drift population Figure 7: Input offset voltage vs. supply voltage at VICM = 0 V -40 -20 0 20 40 60 80 100 120 -600 -400 -200 200 400 600 Vio limit Vcc=16V Vicm=8V Input offset voltage (µV) Temperature (°C)
Figure 32: Channel separation (TSX712)
5 Application information
5.1 Operating voltages
The TSX711, TSX711A, and TSX712 devices can operate from 2.7 to 16 V. The parameters are fully specified for 4 V, 10 V, and 16 V power supplies. However, the parameters are very stable in the full VCC range. Additionally, the main specifications are guaranteed in extended temperature ranges from -40 to 125 °C.
5.2 Input pin voltage ranges
The TSX711, TSX711A, and TSX712 devices have internal ESD diode protection on the inputs. These diodes are connected between the input and each supply rail to protect the input MOSFETs from electrical discharge. If the input pin voltage exceeds the power supply by 0.5 V, the ESD diodes become conductive and excessive current can flow through them. Without limitation this over current can damage the device. In this case, it is important to limit the current to 10 mA, by adding resistance on the input pin, as described in Figure 33: "Input current limitation". Figure 33: Input current limitation
5.3 Rail-to-rail input
The TSX711, TSX711A, and TSX712 devices have a rail-to-rail input, and the input common mode range is extended from (VCC-) - 0.1 V to (VCC+) + 0.1 V.
5.4 Rail-to-rail output
The operational amplifier output levels can go close to the rails: to a maximum of 40 mV above and below the rail when connected to a 10 kΩ resistive load to VCC/2. Vin R 16 V Vout
5.5 Input offset voltage drift over temperature
The maximum input voltage drift variation over temperature is defined as the offset variation related to the offset value measured at 25 °C. The operational amplifier is one of the main circuits of the signal conditioning chain, and the amplifier input offset is a major contributor to the chain accuracy. The signal chain accuracy at 25 °C can be compensated during production at application level. The maximum input voltage drift over temperature enables the system designer to anticipate the effect of temperature variations. The maximum input voltage drift over temperature is computed using Equation 1. Equation 1 Where T = -40 °C and 125 °C. The TSX711, TSX711A, and TSX712 datasheet maximum values are guaranteed by measurements on a representative sample size ensuring a Cpk (process capability index) greater than 1.3.
5.6 Long term input offset voltage drift
To evaluate product reliability, two types of stress acceleration are used: Voltage acceleration, by changing the applied voltage Temperature acceleration, by changing the die temperature (below the maximum junction temperature allowed by the technology) with the ambient temperature. The voltage acceleration has been defined based on JEDEC results, and is defined using Equation 2. Equation 2 Where: AFV is the voltage acceleration factor β is the voltage acceleration constant in 1/V, constant technology parameter (β = 1) VS is the stress voltage used for the accelerated test VU is the voltage used for the application The temperature acceleration is driven by the Arrhenius model, and is def ined in Equation 3. Equation 3 ∆Vio ∆T max Vio T Vio 25 T 25 °C– = °C AFV e β VS VU– AFT e Ea TU TS
Where: AFT is the temperature acceleration factor Ea is the activation energy of the technology based on the failure rate k is the Boltzmann constant (8.6173 x 10-5 eV.K-1) TU is the temperature of the die when VU is used (K) TS is the temperature of the die under temperature stress (K) The final acceleration factor, AF, is the multiplication of the voltage acceleration factor and the temperature acceleration factor (Equation 4). Equation 4 AF is calculated using the temperature and voltage defined in the mission profile of the product. The AF value can then be used in Equation 5 to calculate the number of months of use equivalent to 1000 hours of reliable stress duration. Equation 5 To evaluate the op amp reliability, a follower stress condition is used where VCC is defined as a function of the maximum operating voltage and the absolute maximum rating (as recommended by JEDEC rules). The Vio drift (in µV) of the product after 1000 h of stress is tracked with parameters at different measurement conditions (see Equation 6). Equation 6 The long term drift parameter (ΔVio), estimating the reliability performance of the product, is obtained using the ratio of the Vio (input offset voltage value) drift over the square root of the calculated number of months (Equation 7). Equation 7 Where Vio drift is the measured drift value in the specified test conditions after 1000 h stress duration. AF AFT AFV×= Months AF 1000 h× 12 months 24 h 365.25 days× ×= / VCC maxVop with Vicm VCC 2= = ∆Vio Viodrift month s
5.7 High values of input differential voltage
In a closed loop configuration, which represents the typical use of an op amp, the input differential voltage is low (close to Vio). However, some specific conditions can lead to higher input differential values, such as: operation in an output saturation state operation at speeds higher than the device bandwidth, with output voltage dynamics limited by slew rate. use of the amplifier in a comparator configuration, hence in open loop Use of the TSX711, TSX711A, or TSX712 in comparator configuration, especially combined with high temperature and long duration can create a permanent drift of V io.
5.8 Capacitive load
Driving large capacitive loads can cause stability problems. Increasing the load capacitance produces gain peaking in the frequency response, with overshoot and ringing in the step response. It is usually considered that with a gain peaking higher than 2.3 dB an op amp might become unstable. Generally, the unity gain configuration is the worst case for stability and the ability to drive large capacitive loads. Figure 34: "Stability criteria with a serial resistor at different supply voltage" shows the serial resistor that must be added to the output, to make a system stable. Figure 35: "Test configuration for Riso" shows the test configuration using an isolation resistor, Riso. Figure 34: Stability criteria with a serial resistor at different supply voltage 100 p 1n 10 n 100 n 100 1000 Vcc=2.7V Vcc=16V Unstable Stable Vicm=Vcc/2 Rl=10kΩ Gain=1 T=25°C Riso (Ω) Cload (F)
Figure 35: Test configuration for Riso
5.9 PCB layout recommendations
Particular attention must be paid to the layout of the PCB, tracks connected to the amplifier, load, and power supply. The power and ground traces are critical as they must provide adequate energy and grounding for all circuits. The best practice is to use short and wide PCB traces to minimize voltage drops and parasitic inductance. In addition, to minimize parasitic impedance over the entire surface, a multi-via technique that connects the bottom and top layer ground planes together in many locations is often used. The copper traces that connect the output pins to the load and supply pins should be as wide as possible to minimize trace resistance.
5.10 Optimized application recommendation
It is recommended to place a 22 nF capacitor as close as possible to the supply pin. A good decoupling will help to reduce electromagnetic interference impact. Cload VIN + VCC+ Riso 10 kΩ VCC- VOUT
5.11 Application examples
5.11.1 Oxygen sensor
The electrochemical sensor creates a current proportional to the concentration of the gas being measured. This current is converted into voltage thanks to R resistance. This voltage is then amplified by the TSX711, TSX711A, or the TSX712 (see Figure 36: "Oxygen sensor principle schematic"). Figure 36: Oxygen sensor principle schematic The output voltage is calculated using Equation 8: Equation 8 As the current delivered by the O2 sensor is extremely low, the impact of the Vio can become significant with a traditional operational amplifier. The use of a precision amplifier like the TSX711, TSX711A, TSX712 is perfect for this application. In addition, using the TSX711, TSX711A, TSX712 for the O2 sensor application ensures that the measurement of O2 concentration is stable, even at different temperatures, thanks to a small ΔVio/ΔT. -O2_ sensor R1 R2 VCC Vout I Vout I R Vio 1+×–×=
5.11.2 Low-side current sensing
Power management mechanisms are found in most electronic systems. Current sensing is useful for protecting applications. The low-side current sensing method consists of placing a sense resistor between the load and the circuit ground. The resulting voltage drop is amplified using the TSX711, TSX711A, or TSX712 (see Figure 37: "Low-side current sensing schematic"). Figure 37: Low-side current sensing schematic Vout can be expressed as follows: Equation 9 Assuming that Rf2 = Rf1 = Rf and Rg2 = Rg1 = Rg, Equation 9 can be simplified as follows: Equation 10 The main advantage of using a precision amplifier like the TSX711, TSX711A, or TSX712, for a low-side current sensing, is that the errors due to Vio and Iio are extremely low and may be neglected. Therefore, for the same accuracy, the shunt resistor can be chosen with a lower value, resulting in lower power dissipation, lower drop in the ground path, and lower cost. Particular attention must be paid on the matching and precision of Rg1, Rg2, Rf1, and Rf2, to maximize the accuracy of the measurement. Taking into consideration the resistor inaccuracies, the maximum and minimum output voltage of the operational amplifier can be calculated respectively using Equation 11 and Equation 12. Rshunt Rg1 Rg2 Rf1 5 V Vout Rf2 I In Ip Vout Rshun t I 1 Rg2 Rg2 Rf2+ 1 Rf1 Rg1 –× Ip Rg2 Rf2 Rg2 Rf2 Rf1 Rg1 ln Rf1 Vio 1 Rf1 Rg1 +––+= + + ×× + × Vout Rshunt I Rf Rg × Vio 1 Rf Rg – Rf Iio×+= +
Where: εrs is the shunt resistor inaccuracy (example, 1 % ) εr is the inaccuracy of the Rf and Rg resistors (example, 0.1 %) Maximum Vout Rshunt I× Rf Rg× 1 εrs 2εr+ + Vio 1 Rf Rg Rf lio×+×+×= + Minimum Vout Rshunt I× Rf Rg× 1 εrs– 2εr– Vio 1 Rf Rg Rf lio×+×–×= +
6 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
6.1 SOT23-5 package information
Figure 38: SOT23-5 package outline Table 6: SOT23-5 mechanical data Ref. Dimensions Millimeters Inches 0.15 0.006 1.90 0.075 e 0.95 0.037 K 0 degrees 10 degrees 0 degrees 10 degrees
6.2 MiniSO8 package information
Figure 39: MiniSO8 package outline Table 7: MiniSO8 mechanical data Ref. Dimensions Millimeters Inches A 1.1 0.043 A1 0 0.15 0 0.006 b 0.22 0.40 0.009 0.016 c 0.08 0.23 0.003 0.009 e 0.65 0.026 0.95 0.037 0.25 0.010 k 0° 8° 0° ccc 0.10 0.004
6.3 SO8 package information
Figure 40: SO8 package outline Table 8: SO8 mechanical data Ref. Dimensions Millimeters Inches A 1.75 0.069 A1 0.10 0.25 0.004 0.010 A2 1.25 0.049 b 0.28 0.48 0.011 0.019 c 0.17 0.23 0.007 0.010 e 1.27 0.050 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 1.04 0.040 k 0° 8° 0° ccc 0.10 0.004
7 Ordering information
Table 9: Order codes Order code Temperature range Package Packaging Marking TSX711ILT -40 to 125 °C SΟΤ23-5 Tape and reel K29 TSX711AILT K195 TSX711IYLT (1) -40 to 125 °C (automotive grade) K197 TSX711AIYLT (1) K198 TSX712IDT -40 to 125 °C SO8 TSX712 TSX712IST MiniSO8 K211 TSX712IYDT (1) -40 to 125 °C (automotive grade) SO8 TSX712Y TSX712IYST (1) MiniSO8 K212 Notes: (1)Qualification and characterization according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC Q001 & Q 002 or equivalent.
8 Revision history
Table 10: Document revision history Date Revision Changes 27-Feb-2014 1 Initial release 19-Mar-2014 2 Table 1: updated ESD data for MM (machine model) 25-Jul-2014 3 Table 3: updated Iout (Isink) values. Table 3, Table 4, and Table 5: updated Vio values, updated ΔVio/ΔT. Table 5: updated VOL values Table 6: updated “inches” dimensions 26-Jan-2016 4 TSX711 datasheet merged with TSX712 datasheet. Reworked the following sections: Cover image, Related products, Description, Section 1: "Package pin connections", Section 2: "Absolute maximum ratings and operating conditions", Section 3: "Electrical characteristics", Section 4: "Electrical characteristic curves", Section 5.1: "Operating voltages", Section 5.2: "Input pin voltage ranges", Section 5.3: "Rail-to- rail input", Section 5.4: "Rail-to-rail output", Section 5.5: "Input offset voltage drift over temperature", Section 5.7: "High values of input differential voltage", Section 5.11.1: "Oxygen sensor", Section 5.11.2: "Low-side current sensing", Section 7: "Ordering information". Added: Section 6.2: "MiniSO8 package information" and Section 6.3: "SO8 package information". 21-Mar-2017 5 Added part number TSX711A Table 9: "Order codes": updated footnotes with respect to TSX711IYLT, TSX711AIYLT, TSX712IYDT, and TSX712IYST.