TSX561 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 28
Technical content
Datasheet sections
- 1 Pin connections
- 2 Absolute maximum ratings and operating conditions
- 3 Electrical characteristics
- 4 Application information
- 4.1 Operating voltages
- 4.2 Rail-to-rail input
- 4.3 Input offset voltage drift over temperature
- 4.4 Long term input offset voltage drift
- 4.5 PCB layouts
- 4.6 Macromodel
- 5 Package information
- 5.1 SOT23-5 package information
- 5.2 DFN8 2x2 package information
- 5.3 MiniSO8 package information
- 5.4 SO8 package information
- 5.5 QFN16 3x3 package information
- 5.6 TSSOP14 package information
- 6 Ordering information
- 7 Revision history
Features
- Low power consumption: 235 µA typ. at 5 V
- Supply voltage: 3 V to 16 V
- Gain bandwidth product: 900 kHz typ.
- Low offset voltage – “A” version: 600 µV max. – Standard version: 1 mV max.
- Low input bias current: 1 pA typ.
- High tolerance to ESD: 4 kV
- Wide temperature range: -40 to +125 °C
- Automotive qualification
- Tiny packages available –S O T 2 3 - 5 – DFN8 2 mm x 2 mm, MiniSO8, SO8 – QFN16 3 mm x 3 mm, TSSOP14 Benefits
- Power savings in power-conscious
applications
- Easy interfacing with high impedance sensors
Related products
- See TSX63x series for reduced power consumption (45 μA, 200 kHz)
- See TSX92x series for higher gain bandwidth products (10 MHz)
- Industrial and automotive signal conditioning
- Active filtering
- Medical instrumentation
- High impedance sensors
Description
The TSX56x, TSX56xA series of operational amplifiers benefit from STMicroelectronics® 16 V CMOS technology to offer state-of-the-art accuracy and performance in the smallest industrial packages. The TSX56x, TSX56xA have pinouts compatible with industrial standards and offer an outstanding speed/power consumption ratio, 900 kHz gain bandwidth product while consuming only 250 µA at 16 V. Such features make the TSX56x, TSX56xA ideal for sensor interfaces and industrial signal conditioning. The wide temperature range and high ESD tolerance ease use in harsh automotive applications. 627 VLQJOH GXDO 0LQL62 GXDO 76623 TXDG ')1[ GXDO 4)1[ TXDG Table 1. Device summary
1 Pin connections
Figure 1. Pin connections for each package (top view)
2 Absolute maximum ratings and operating conditions
Table 2. Absolute maximum ratings (AMR)
- All voltage values, except differential voltage , are with respect to network ground terminal.
- The differential voltage is the non-inverting input term inal with respect to the inverting input terminal.
- V CC - Vin must not exceed 18 V, Vin must not exceed 18 V.
- Input current must be limited by a resistor in series with the inputs.
- Short-circuits can c ause excessive heating and destructive dissipation.
- Human body model: 100 pF discharged through a 1.5 k Ω resistor between two pins of the device, done for
all couples of pin combinations with other pins floating.
- Machine model: a 200 pF cap is charged to the spec ified voltage, then discharged directly between two
combinations with other pins floating.
- Charged device model: all pins plus package ar e charged together to the specified voltage and then
discharged directly to ground. Table 3. Operating conditions
3 Electrical characteristics
Table 4. Electrical characteristics at VCC+ = +3.3 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 °C, and
- See Section 4.3: Input offset voltage drift over temperature on page 15.
Table 5. Electrical characteristics at VCC+ = +5 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 °C, and
- See Section 4.3: Input offset voltage drift over temperature on page 15.
- Typical value is based on the V io drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and
assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.
Table 6. Electrical characteristics at VCC+ = +16 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 °C, and
- See Section 4.3: Input offset voltage drift over temperature on page 15.
- Typical value is based on the V io drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and
assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.
TSX56x, TSX56xA Application information
4 Application information
4.1 Operating voltages
The amplifiers of the TSX56x and TSX56xA series can operate from 3 V to 16 V. Their parameters are fully specified at 3.3 V, 5 V and 16 V power supplies. However, the parameters are very stable in the full V CC range. Additionally, the main specifications are guaranteed in extended temperature ranges from -40 to +125 ° C.
4.2 Rail-to-rail input
The TSX56x and TSX56xA devices are built with two complementary PMOS and NMOS input differential pairs. The devices have a rail-to-rail input, and the input common mode range is extended from V CC- - 0.1 V to VCC+ + 0.1 V. However, the performance of these devices is clearly optimized for the PMOS differential pairs (which means from V CC- - 0.1 V to VCC+ - 1.5 V). Beyond VCC+ - 1.5 V, the operational amplifiers are still functional but with degraded performance, as can be observed in the electrical characteristics section of this datasheet (mainly Vio and GBP). These performances are suitable for a number of applications needing to be rail-to-rail. The devices are designed to prevent phase reversal.
4.3 Input offset voltage drift over temperature
The maximum input voltage drift over the temperature variation is defined as the offset variation related to the offset value measured at 25 °C. The operational amplifier is one of the main circuits of the signal conditioning chain, and the amplifier input offset is a major contributor to the chain accuracy. The signal chain accuracy at 25 °C can be compensated during production at application level. The maximum input voltage drift over temperature enables the system designer to anticipate the effects of temperature variations. The maximum input voltage drift over temperature is computed in Equation 1. Equation 1 with T = -40 °C and 125 °C. The datasheet maximum value is guaranteed by measurement on a representative sample size ensuring a C pk (process capability index) greater than 2. ΔVio
4.4 Long term input offset voltage drift
To evaluate product reliability, two types of stress acceleration are used:
- Voltage acceleration, by changing the applied voltage
- Temperature acceleration, by changing the die temperature (below the maximum junction temperature allowed by the technology) with the ambient temperature. The voltage acceleration has been defined based on JEDEC results, and is defined using Equation 2. Equation 2 Where: AFV is the voltage acceleration factor β is the voltage acceleration constant in 1/V, constant technology parameter (β = 1) VS is the stress voltage used for the accelerated test VU is the voltage used for the application The temperature acceleration is driven by the Arrhenius model, and is defined in Equation 3. Equation 3 Where: AFT is the temperature acceleration factor Ea is the activation energy of the technology based on the failure rate k is the Boltzmann constant (8.6173 x 10-5 eV.K-1) TU is the temperature of the die when VU is used (K) TS is the temperature of the die under temperature stress (K) The final acceleration factor, AF, is the multiplication of the voltage acceleration factor and the temperature acceleration factor (Equation 4). Equation 4 AF is calculated using the temperature and voltage defined in the mission profile of the product. The AF value can then be used in Equation 5 to calculate the number of months of use equivalent to 1000 hours of reliable stress duration. AFV e β VS VU–()⋅ AFT e Ea TU TS ⎛⎞⋅ AF AFT AFV×=
TSX56x, TSX56xA Application information Equation 5 To evaluate the op-amp reliability, a follower stress condition is used where VCC is defined as a function of the maximum operating voltage and the absolute maximum rating (as recommended by JEDEC rules). The Vio drift (in µV) of the product after 1000 h of stress is tracked with parameters at different measurement conditions (see Equation 6). Equation 6 The long term drift parameter (ΔVio), estimating the reliability performance of the product, is obtained using the ratio of the Vio (input offset voltage value) drift over the square root of the calculated number of months (Equation 7). Equation 7 where Vio drift is the measured drift value in the specified test conditions after 1000 h stress duration.
4.5 PCB layouts
For correct operation, it is advised to add 10 nF decoupling capacitors as close as possible to the power supply pins.
4.6 Macromodel
Accurate macromodels of the TSX56x, TSX56xA devices are available on the STMicroelectronics’ website at www.st.com. These models are a trade-off between accuracy and complexity (that is, time simulation) of the TSX56x and TSX56xA operational amplifiers. They emulate the nominal performance of a typical device within the specified operating conditions mentioned in the datasheet. They also help to validate a design approach and to select the right operational amplifier, but they do not replace on-board measurements. Months A F 1000 h× 12 months 24 h 365.25 days×()⁄×= VCC maxVop with Vicm VCC 2⁄== ΔVio Vio drift months()
5 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
5.1 SOT23-5 package information
Figure 23. SOT23-5 package mechanical drawing Table 7. SOT23-5 package mechanical data
5.2 DFN8 2x2 pack age information
Figure 24. DFN8 2x2 package mechanical drawing Table 8. DFN8 2x2 package mechanical data
5.3 MiniSO8 package information
Figure 25. MiniSO8 package mechanical drawing Table 9. MiniSO8 package mechanical data
5.4 SO8 package information
Figure 26. SO8 package mechanical drawing Table 10. SO8 package mechanical data
5.5 QFN16 3x3 package information
Figure 27. QFN16 3x3 package mechanical drawing
Table 11. QFN16 3x3 package mechanical data
5.6 TSSOP14 package information
Figure 28. TSSOP14 package mechanical drawing Table 12. TSSOP14 package mechanical data
6 Ordering information
Table 13. Order codes
- Qualified and characterized according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC Q001
- Qualification and characterization acco rding to AEC Q100 and Q003 or equivalent, advanced screening according to AEC
Q001 and Q 002 or equivalent are ongoing.
7 Revision history
Table 14. Document revision history 06-Jun-2012 1 Initial release. Added TSX562, TSX564, TSX562A, and TSX564A devices. MiniSO8, QFN16, and TSSOP14 package). Updated Table 1 (updated ESD MM values). Minor corrections throughout document. data of the DFN8 2x2 and QFN16 3x3 packages. Added Benefits and Related products. Table 7: SOT23-5 package mechanical data. Added SO8 package for dual version TSX562 and TSX562A. TSX562AIYDT; updated automotive grade status.