TSU101 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 33
Technical content
Datasheet sections
- 1 Package pin connections
- 2 Absolute maximum ratings and operating conditions
- 3 Electrical characteristics
- 4 Application information
- 4.1 Operating voltages
- 4.2 Rail-to-rail input
- 4.3 Input offset voltage drift over temperature
- 4.4 Long term input offset voltage drift
- 4.5 Schematic optimization aiming for nanopower
- 4.6 PCB layout considerations
- 4.7 Using the TSU10x series with sensors
- 4.8 Fast desaturation
- 4.9 Using the TSU10x series in comparator mode
- 4.10 ESD structure of TSU10x series
- 5 Package information
- 5.1 SC70-5 (or SOT323-5) package mechanical data
- 5.2 SOT23-5 package mechanical data
- 5.3 DFN8 2x2 package information
- 5.4 MiniSO8 package information
- 5.5 QFN16 package information
- 5.6 TSSOP14 package information
- 6 Ordering information
- 7 Revision history
Features
- Submicro ampere current consumption: 580 nA typ per channel at 25 °C at VCC = 1.8 V
- Low supply voltage: 1.5 V - 5.5 V
- Unity gain stable
- Rail-to-rail input and output
- Gain bandwidth product: 8 kHz typ
- Low input bias current: 5 pA max at 25 °C
- High tolerance to ESD: 2 kV HBM
- Industrial temperature range: -40 °C to +85 °C Benefits
- 42 years of typical equivalent lifetime (for TSU101) if supplied by a 220 mAh coin type Lithium battery
- Tolerance to power supply transient drops
- Accurate signal conditioning of high impedance sensors
- Application performances guaranteed over industrial temperature range
- Fast desaturation
Applications
- Ultra long life battery-powered applications
- Power metering
- UV and photo sensors
- Electrochemical and gas sensors
- Pyroelectric passive infrared (PIR) detection
- Battery current sensing
- Medical instrumentation
- RFID readers
Description
The TSU101, TSU102, and TSU104 operational amplifiers offer an ultra low-power consumption of 580 nA typical and 750 nA maximum per channel when supplied by 1.8 V. Combined with a supply voltage range of 1.5 V to 5.5 V, these features allow the TSU10x series to be efficiently supplied by a coin type Lithium battery or a regulated voltage in low-power applications. The 8 kHz gain bandwidth of these devices make them ideal for sensor signal conditioning, battery supplied, and portable applications. 627 768 768 0LQL62 768 76623 768 ')1[ 768 4)1[ 768
1 Package pin connections
Figure 1. Pin connections for each package (top view)
2 Absolute maximum ratings and operating conditions
Table 1. Absolute maximum ratings (AMR)
- All voltage values, except the differential volt age are with respect to the network ground terminal.
- The differential voltage is the non-inverting input term inal with respect to the inverting input terminal.
- (Vcc+ - Vin) must not exceed 6 V, (Vin - Vcc-) must not exceed 6 V.
- The input current must be limited by a resistor in series with the inputs.
- Short-circuits can c ause excessive heating and destructive dissipation.
- Related to ESDA/JEDEC JS-001 Apr. 2010
- Related to JEDEC JESD22-A115C Nov.2010
- Related to JEDEC JESD22-C101-E Dec. 2009
- Related to JEDEC JESD78C Sept. 2010
Table 2. Operating conditions
3 Electrical characteristics
Table 3. Electrical characteristics at Vcc+ = 1.8 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 ° C, and
- Typical value is based on the V io drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and
assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.
Table 4. Electrical characteristics at Vcc+ = 3.3 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 ° C, and
- Typical value is based on the V io drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and
assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.
Table 5. Electrical characteristics at Vcc+ = 5 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 ° C, and
- Typical value is based on the V io drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and
assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.
- Based on evaluations performed only in conductive mode.
Figure 2. Supply current vs. supply voltage Figure 3. Supply current vs. input common Figure 4. Supply current in saturation mode Fi gure 5. Input offset voltage distribution Figure 6. Input offset voltage vs. common mode Figure 7. Input offset voltage vs. temperature at
3.3 V supply voltage
Figure 20. Output swing vs. input signal Figure 21. Triangulation of a sine wave Figure 22. Large signal response at 3.3 V Figure 23. Small signal response at 3.3 V supply
22 Follower configuration, T=25°C
Figure 24. Overshoot vs. capacitive load at Figure 25. Phase margin vs. capacitive load at
4 Application information
4.1 Operating voltages
The TSU101, TSU102, and TSU104 series of amplifiers can operate from 1.5 V to 5.5 V. Their parameters are fully specified at 1.8 V, 3.3 V, and 5 V supply voltages and are very stable in the full VCC range. Additionally, main specifications are guaranteed on the industrial temperature range from -40 to +85 ° C.
4.2 Rail-to-rail input
The TSU101, TSU102, and TSU104 series is built with two complementary PMOS and NMOS input differential pairs. Thus, these devices have a rail-to-rail input, and the input common mode range is extended from V CC- - 0.1 V to VCC+ + 0.1 V. The devices have been designed to prevent phase reversal behavior.
4.3 Input offset voltage drift over temperature
The maximum input voltage drift over the temperature variation is defined as the offset variation related to the offset value measured at 25 °C. The operational amplifier is one of the main circuits of the signal conditioning chain, and the amplifier input offset is a major contributor to the chain accuracy. The signal chain accuracy at 25 °C can be compensated during production at application level. The maximum input voltage drift over temperature enables the system designer to anticipate the effects of temperature variations. The maximum input voltage drift over temperature is computed in Equation 1. Equation 1 with T = -40 °C and 85 °C. The datasheet maximum value is guaranteed by measurements on a representative sample size ensuring a Cpk (process capability index) greater than 2. ΔVio
4.4 Long term input offset voltage drift
To evaluate product reliability, two types of stress acceleration are used:
- Voltage acceleration, by changing the applied voltage
- Temperature acceleration, by changing the die temperature (below the maximum junction temperature allowed by the technology) with the ambient temperature. The voltage acceleration has been defined based on JEDEC results, and is defined using Equation 2. Equation 2 Where: AFV is the voltage acceleration factor β is the voltage acceleration constant in 1/V, constant technology parameter (β = 1) VS is the stress voltage used for the accelerated test VU is the voltage used for the application The temperature acceleration is driven by the Arrhenius model, and is defined in Equation 3. Equation 3 Where: AFT is the temperature acceleration factor Ea is the activation energy of the technology based on the failure rate k is the Boltzmann constant (8.6173 x 10-5 eVk-1) TU is the temperature of the die when VU is used (° K) TS is the temperature of the die under temperature stress (° K) The final acceleration factor, AF, is the multiplication of the voltage acceleration factor and the temperature acceleration factor (Equation 4). Equation 4 AF is calculated using the temperature and voltage defined in the mission profile of the product. The AF value can then be used in Equation 5 to calculate the number of months of use equivalent to 1000 hours of reliable stress duration. AFV e β VS VU–()⋅ AFT e Ea TU TS ⎛⎞⋅ AF AFT AFV×=
To evaluate the op-amp reliability, a follower stress condition is used where VCC is defined as a function of the maximum operating voltage and the absolute maximum rating (as recommended by JEDEC rules). The Vio drift (in µV) of the product after 1000 h of stress is tracked with parameters at different measurement conditions (see Equation 6). Equation 6 The long term drift parameter (ΔVio), estimating the reliability performance of the product, is obtained using the ratio of the Vio (input offset voltage value) drift over the square root of the calculated number of months (Equation 7). Equation 7 where Vio drift is the measured drift value in the specified test conditions after 1000 h stress duration.
4.5 Schematic optimization aiming for nanopower
To benefit from the full performance of the TSU10 series, the impedances must be maximized so that current consumption is not lost where it is not required. For example, an aluminum electrolytic capacitance can have significantly high leakage. This leakage may be greater than the current consumption of the op-amp. For this reason, ceramic type capacitors are preferred. For the same reason, big resistor values should be used in the feedback loop. However, there are three main limitations to be considered when choosing a resistor. 1. When the TSU10x series is used with a se nsor: the resistance connected between the sensor and the input must remain much higher than the impedance of the sensor itself. 2. Noise generated: a100 k Ω resistor generates 40 , a bigger resistor value generates even more noise. 3. Leakage on the PCB: leakage can be generat ed by moisture. This can be improved by using a specific coating process on the PCB. Months A F 1000 h× 12 months 24 h 365.25 days×()⁄×= VCC maxVop with Vicm VCC 2⁄== ΔVio Vio drift months() nV Hz
4.6 PCB layout considerations
potential as the high impedance node. can flow through them as they are at the same potential (see Figure 38). Figure 38. Guarding on the PCB
4.7 Using the TSU10x series with sensors
operational amplifier is used in combination with high impedance sensors. series is well adapted for use with the electrochemical sensors of two or three electrodes. measured on the working electrode. Figure 39. Trans-impedance amplifier schematic
Figure 40. Potentiostat schematic using the TSU101 (or TSU102)
4.8 Fast desaturation
VCC- supply rails (see Figure 15 and Figure 16). 100 mV from the supply rails.
4.9 Using the TSU10x ser ies in comparator mode
if the primary function is to perform a signal comparison only.
4.10 ESD structure of TSU10x series
Figure 41. ESD structure 10 mA limit of input current must be strictly observed.
5 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
5.1 SC70-5 (or SOT323-5) package mechanical data
Figure 42. SC70-5 (or SOT323-5) package mechanical drawing Table 6. SC70-5 (or SOT323-5) package mechanical data
5.2 SOT23-5 package mechanical data
Figure 43. SOT23-5 package mechanical drawing Table 7. SOT23-5 package mechanical data
5.3 DFN8 2x2 pack age information
Figure 44. DFN8 2x2 package mechanical drawing Table 8. DFN8 2x2 package mechanical data
5.4 MiniSO8 package information
Figure 45. MiniSO8 package mechanical drawing Table 9. MiniSO8 package mechanical data
5.5 QFN16 package information
Figure 46. QFN16 package mechanical drawing Table 10. QFN16 package mechanical data
Figure 47. QFN16 3x3 footprint recommendation
5.6 TSSOP14 package information
Figure 48. TSSOP14 package mechanical drawing Table 12. TSSOP14 package mechanical data
6 Ordering information
7 Revision history
Table 13. Order codes Table 14. Document revision history Added Figure 36 and Figure 37.