TSSP4P38 VISHAY | Alldatasheet

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www.vishay.com Vishay Semiconductors Rev. 1.6, 01-Jun-15 1 Document Number: 82474 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IR Mid Range Proximity Sensors MECHANICAL DATA Pinning 1 = OUT, 2 = GND, 3 = V S

DESCRIPTION

The TSSP4P38 is a compact infrared detector module for proximity sensing applications. It receives 38 kHz modulated signals and has a peak sensitivity of 940 nm. The length of the detector’s output pulse varies in proportion to the amount of light reflected from the object being detected.

FEATURES

  • Up to 2 m for proximity sensing
  • Uses modulated bursts at 38 kHz
  • 940 nm peak wavelength
  • Photo detector and preamplifier in one package
  • Low supply current
  • Shielding against EMI
  • Visible light is suppressed by IR filter
  • Insensitive to supply voltage ripple and noise
  • Supply voltage: 2.5 V to 5.5 V
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

  • Object approach detection for activation of displays and user consoles, signaling of alarms, etc.
  • Simple gesture controls
  • Differentiation of car arriva l, static, car departure in parking lots
  • Reflective sensors for toilet flush
  • Navigational sensor for robotics BLOCK DIAGRAM PROXIMITY SENSING 16672 PARTS TABLE Carrier frequency 38 kHz TSSP4P38 Package Mold Pinning 1 = OUT, 2 = GND, 3 = VS Dimensions (mm) 6.0 W x 6.95 H x 5.6 D Mounting Leaded Application Proximity sensors 33 kΩ VS OUTDemo- GND passAGCInput PIN Band dulator Control circuit 16833_5 + 3 V IR emitter + 3 V 38 kHz Envelope signal Out to μC IR detector

www.vishay.com Vishay Semiconductors Rev. 1.6, 01-Jun-15 2 Document Number: 82474 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note

  • Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress ratin g only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Output Active Low Fig. 2 - Pulse Length and Sensitivity in Dark Ambient ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Supply voltage (pin 3) V S -0.3 to +6 V Supply current (pin 3) I S 5m A Output voltage (pin 1) V O -0.3 to 5.5 V Voltage at output to supply V S - VO -0.3 to (VS + 0.3) V Output current (pin 1) I O 5m A Junction temperature T j 100 °C Storage temperature range T stg -25 to +85 °C Operating temperature range T amb -25 to +85 °C Power consumption T amb  85 °C P tot 10 mW Soldering temperature t  10 s, 1 mm from case T sd 260 °C ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Supply current E e = 0, VS = 5 V I SD 0.55 0.7 0.9 mA Ev = 40 klx, sunlight I SH 0.8 mA Supply voltage V S 2.5 5.5 V Receiving distance Direct line of sight, test signal see fig. 1, IR diode TSAL6200, IF = 200 mA d4 5m Output voltage low IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VOSL 100 mV Minimum irradiance Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee min. 0.12 0.25 mW/m 2 Maximum irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee max. 50 W/m 2 Directivity Angle of half receiving distance 1/2 ± 45 deg Ee T t * tpi 10/f0 is recommended for optimal function VO VOH VOL t 16110_4 Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f 0, t = 10 ms) Output Signal td 1) tpo 2) 1) 7/f0 < td < 15/f0 2) tpi - 5/f0 < tpo < tpi + 6/f0 tpi * 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 10 1000 100 000 tpo - Output Pulse Width (ms) Ee - Irradiance (mW/m2) Output pulse width Input burst length λ = 950 nm, optical test signal, Fig. 1

www.vishay.com Vishay Semiconductors Rev. 1.6, 01-Jun-15 3 Document Number: 82474 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Frequency Dependence of Responsivity Fig. 4 - Sensitivity in Bright Ambient Fig. 5 - Sensitivity vs. Supply Voltage Disturbances Fig. 6 - Max. Output Pulse Width vs. Irradiance Fig. 7 - Sensitivity vs. Ambient Temperature Fig. 8 - Relative Spectral Sensitivity vs. Wavelength 0.0 0.2 0.4 0.6 0.8 0.9 1.0 25 30 45 50 f/f0 - Relative Frequency E /E - Rel. Responsivitye min. e 4035 0.1 0.3 0.5 0.7 f = f0 ± 5 % Δf (3 dB) = f0/10 0.5 1.5 2.5 3.5 4.5 0.01 0.1 1 10 100 Ee min. - Threshold Irradiance (mW/m2) Ee - Ambient DC Irradiance (W/m2) Wavelength of ambient illumination: λ = 950 nm Correlation with ambient light sources:

10 W/m

2 = 1.4 klx (Std. ilum. A, T = 2855 K) 10 W/m2 = 8.2 klx (Daylight, T = 5900 K) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 1000 Ee min. - Threshold Irradiance (mW/m2) ΔVS RMS - AC Voltage on DC Supply Voltage (mV) f = f0 f = 10 kHz f = 100 kHz 22088 100 120 140 160 180 200 0.1 1 10 100 tpo - Output Pulse Width (ms) Ee - Irradiance (mW/m2) Burst length = 300 ms, f = fO 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 -30 -10 10 30 50 70 90 Ee min. - Threshold Irradiance (mW/m2) Tamb - Ambient Temperature (°C) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 750 800 850 900 950 1000 1050 1100 1150 21425 λ- Wavelength (nm) S (λ) rel - Relative Spectral Sensitivity

www.vishay.com Vishay Semiconductors Rev. 1.6, 01-Jun-15 4 Document Number: 82474 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 9 - Angle Characteristic Fig. 10 - Max. Rate of Bursts Fig. 11 - tpo vs. Distance Kodak Gray Card Plus 15 % Fig. 12 - Dynamic Range of Sensor vs. tpi The typical application of the TSSP4P38 is a reflective sensor with analog information contained in its output. The sensor evaluates the time requir ed by the AGC to suppress a quasi continuous signal . The time required to suppress a continuous signal is longer when the signal is strong than when the signal is weak. The result is an output pulse length which corresponds to the distance of an object from the sensor. This kind of analog information can be evaluated by a microcontroller. The absolute amount of reflected light depends on the infrared reflectivity of the object and is not evaluated. Only changes in the amount of reflected light, and therefore changes in the pulse width can be evaluated with accuracy. Example of a signal pattern: Angle (°) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -90 -70 -50 -30 -10 10 30 50 90 Relative Response Distance Directivity Characteristic of a Reflective Sensor using VSLB3940 and TSSP4P38 tpi (ms) trepeat min. (ms) 100 200 300 400 500 600 700 800 0 2 0 40 60 80 100 120 140 160 180 100 120 140 Response Distance (m) tpo (ms) IF = 10 mA IF = 30 mA IF = 50 mA IF = 100 mA Emitter: VSLB3940 tpi (ms) dmax./dmin. 10 20 30 40 110 120 1009080706050 Optical signal Response of the TSSP4P38 (strong reflection) trepeat = 500 ms tpi = 120 ms, 38 kHz Response of the TSSP4P38 (weak reflection)

www.vishay.com Vishay Semiconductors Rev. 1.6, 01-Jun-15 5 Document Number: 82474 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Example for a sensor hardware: There should be no common window in front of the emitter and detector in order to avoi d crosstalk by guided light through the window. The logarithmic characteristic of the AGC in the TSSP4P38 results in an almost linear relationship between distance and pulse width. Ambient light has also some impact to the pulse width of this kind of sensor, making the pulse shorter. PACKAGE DIMENSIONS in millimeters IR emitter IR detector Separation to avoid crosstalk by stray light inside the housing 16003 Not indicated tolerances ± 0.2 Drawing-No.: 6.550-5169.11-4 Issue: 13; 17.12.08 specifications according to DIN technical drawings 3.9 0.5 max. 1.3 4.1 0.85 max. 0.89 8.25 (5.55) 6.95 OUT VSGND 5.3 30.5 ± 0.5 2.54 nom. 2.54 nom. 0.7 max. 5.6 Marking area R 2.5

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