TSSF4500 VISHAY | Alldatasheet

Document overview

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Technical content

Features

/C0068High modulation bandwidth (10 MHz) /C0068Extra high radiant power and high radiant inten- sity /C0068Low forward voltage /C0068Suitable for high pulse current operation /C0068Angle of half intensity ϕ = ± 22/C0176 /C0068Peak wavelength /C0108p = 870 nm /C0068High reliability /C0068Good spectral matching to Si photodetectors 94 8688

Applications

Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements. TSSF4500 is ideal for the design of transmission systems according to IrDA requirements and for carrier fre- quency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz). Absolute Maximum Ratings Tamb = 25/C0095C Parameter Test Conditions Symbol Value Unit Reverse Voltage VR 5 V Forward Current IF 100 mA Peak Forward Current tp/T = 0.5, tp = 100 /C0109s IFM 200 mA Surge Forward Current tp = 100 /C0109s IFSM 1.5 A Power Dissipation PV 170 mW Junction Temperature Tj 100 /C0176C Operating Temperature Range Tamb –40...+100 /C0176C Storage Temperature Range Tstg –40...+100 /C0176C Soldering Temperature t /C0120 5sec, 2 mm from case Tsd 260 /C0176C Thermal Resistance Junction/Ambient R thJA 450 K/W

2 (3) Rev. 3, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 Document Number 81040 Basic Characteristics Tamb = 25/C0095C Parameter Test Conditions Symbol Min Typ Max Unit Forward Voltage IF = 100 mA, tp = 20 ms VF 1.35 1.6 Vg IF = 1.5 A, tp = 100 /C0109s VF 2.4 V Temp. Coefficient of VF IF = 100mA TK VF –1.7 mV/K Reverse Current VR = 5 V IR 10 /C0109A Junction Capacitance VR = 0 V, f = 1 MHz, E = 0C j 160 pF Radiant Intensity IF = 100 mA, tp = 20 ms Ie 10 20 mW/sry IF = 1 A, tp = 100 /C0109s Ie 200 mW/sr Radiant Power IF = 100 mA, tp = 20 ms /C0102e 35 mW Temp. Coefficient of /C0102e IF = 100 mA TK /C0102e –0.7 %/K Angle of Half Intensity ϕ ±22 deg Peak Wavelength IF = 100 mA /C0108p 870 nm Spectral Bandwidth IF = 100 mA /C0068/C0108 40 nm Temp. Coefficient of /C0108p IF = 100 mA TK /C0108p 0.2 nm/K Rise Time IF = 100 mA tr 30 ns Fall Time IF = 100 mA tf 30 ns Dimensions in mm 9612206

3 (3)Rev. 3, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600Document Number 81040 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423