TSSE3H45 TSC | Alldatasheet
Document overview
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Technical content
- Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ high efficiency - High forward surge capability - Halogen-free according to IEC 61249-2-21 definition - Moisture sensitivity level: level 1, per J-STD-020 Case: SOD123HE Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test V RRM V VRMS V IF(AV) A Typ. Max. Typ. Max. IF = 3A T J = 25°C 0.47 0.57 0.50 0.60 IF = 3A T J = 125°C 0.40 0.50 0.43 0.53 TJ = 25°C μA TJ = 125°C mA RθJL °C/W TJ °C TSTG °C Document Number: DS_D0000009 Version: A15 TSSE3H45 - TSSE3H60 3A, 45V - 60V Trench Schottky Rectifiers TSSE3H45 TSSE3H60 VF Taiwan Semiconductor SYMBOL MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER E3H45 Operating junction temperature range Maximum repetitive peak reverse voltage IFSM E3H60 UNIT Marking code Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load SOD123HE Note 1: Pulse test with pulse width = 300μs, 1% duty cycle - 55 to +150 A 45 60 Maximum Instantaneous reverse current at rated reverse voltage Instantaneous forward voltage (Note 1) IR Storage temperature range - 55 to +150 Maximum average forward rectified current Polarity: Indicated by cathode band Weight: 0.022 g (approximately) Maximum RMS voltage 32 42 V Typical thermal resistance 100
FEATURES
- Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS Trench Schottky barrier rectifiers are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters, USB power deliver MECHANICAL DATA
Note 1: "XX" defines voltage from 45V (TSSE3H45) to 60V (TSSE3H60) RATINGS AND CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Document Number: DS_D0000009 Version: A15 TSSE3H45HC0G TSSE3H45 H C0 G AEC-Q101 qualified Green compound Note 2: Whole series with green compound (halogen-free) EXAMPLE PREFERRED PART NO. PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX
DESCRIPTION
(Note 1, 2) H RV G SOD123HE 3,000 / 7" Reel RQ SOD123HE 10,000 / 13" Reel TSSE3H45 - TSSE3H60 Taiwan Semiconductor
ORDERING INFORMATION
PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX PACKAGE PACKING 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 TSSE3H45 TJ=125oC TJ=100oC TJ=25oC INSTANTANEOUS REVERSE CURRENT (mA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG.4 TYPICAL REVERSE CHARACTERISTICS TJ=150oC 0.01 0.1 0 0.2 0.4 0.6 0.8 TJ=125oC TJ=100oC TJ=25oC TSSE3H45 INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG.2 TYPICAL FORWARD CHARACTERISTICS TJ=150oC 50 75 100 125 150 WITH HEATSINK 5mm x 5mm PAD PCB FIG.1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT (A) LEAD TEMPERATURE (oC) 0.01 0.1 100 0 0.2 0.4 0.6 0.8 TSSE3H60 TJ=125oC TJ=100oC TJ=25oC FIG.3 TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) TJ=150oC
Document Number: DS_D0000009 Version: A15 TSSE3H45 - TSSE3H60 Taiwan Semiconductor 100 1000 0.1 1 10 100 f=1.0MHz Vslg=50mVp-p CAPACITANCE (pF) FIG.6 TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE (V) 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 TSSE3H60 TJ=125oC TJ=100oC TJ=25oC INSTANTANEOUS REVERSE CURRENT (mA) FIG.5 TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TJ=150oC
A 1.65 1.95 0.06 0.08 B 2.60 3.00 0.10 0.12 C 0.85 1.15 0.03 0.05 D 0.75 0.85 0.03 0.03 E 0.10 0.20 0.00 0.01 F 0.55 0.75 0.02 0.03 G 0.35 0.55 0.01 0.02 H 1.90 2.30 0.07 0.09 I 1.35 1.55 0.05 0.06 J 0.95 1.25 0.04 0.05 K 3.50 3.90 0.14 0.15 L 0.35 0.55 0.01 0.02 P/N = Marking Code YW = Date Code F = Factory Code Document Number: DS_D0000009 Version: A15 MARKING DIAGRAM TSSE3H45 - TSSE3H60 Taiwan Semiconductor C0 . 7 0 D PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) 0.90 E1 . 4 0 SUGGESTED PAD LAYOUT A1 . 4 0 B2 . 4 0 Symbol Unit (mm) Unit (inch) 0.055 0.094 0.028 0.035 0.055
assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D0000009 Version: A15 TSSE3H45 - TSSE3H60 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,