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Technical content
TSSD10L100SW - TSSD10L200SW Taiwan Semiconductor
1 Version:B1704
10A, 100V - 200V Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Low power loss / high efficiency
- Ideal for automated placement
- Guard ring for over-voltage protection
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and In accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
APPLICATIONS
- Switching mode power supply (SMPS)
- Adapters
- Lighting application
- On-board DC/DC converter MECHANICAL DATA
- Case: TO-252 (D-PAK)
- Molding compound meets UL 94V-0 flammability rating
- Packing code with suffix "G" means green compound (halogen-free)
- Terminal: Matte tin plated leads, solderable per J-STD-002
- Meet JESD 201 class 1A whisker test
- Polarity: As marked
- Weight: 0.4 g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF(AV) 10 A VRRM 100 - 200 V IFSM 120 A TJ MAX 150 °C Package TO-252 (D-PAK) Configuration Single die TO-252 (D-PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL TSSD10L 100SW TSSD10L 150SW TSSD10L 200SW UNIT Marking code on the device 10L100SW 10L150SW 10L200SW Repetitive peak reverse voltage VRRM 100 150 200 V Forward current IF(AV) 10 A Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 A Critical rate of rise of off-state voltage dV/dt 10,000 V/µs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C
TSSD10L100SW - TSSD10L200SW Taiwan Semiconductor
2 Version:B1704
PARAMETER SYMBOL LIMIT UNIT Junction-to-lead thermal resistance RӨJL 13 °C/W Junction-to-ambient thermal resistance RӨJA 59 °C/W Junction-to-case thermal resistance RӨJC 15 °C/W Thermal Performance Note: Units mounted on recommended PCB (16mm x 16mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage per diode (1) TSSD10L100SW IF = 5A, TJ = 25°C VF 0.56 - V IF = 10A, TJ = 25°C 0.70 0.80 V IF = 5A, TJ = 125°C 0.51 - V IF = 10A, TJ = 125°C 0.62 0.71 V TSSD10L150SW TSSD10L200SW IF = 5A, TJ = 25°C 0.81 - V IF = 10A, TJ = 25°C 0.91 1.05 V IF = 5A, TJ = 125°C 0.63 - V IF = 10A, TJ = 125°C 0.72 0.83 V Reverse current @ rated VR per diode (2) TSSD10L100SW TJ = 25°C IR - 50 µA TJ = 125°C - 20 mA TSSD10L150SW TSSD10L200SW TJ = 25°C - 20 µA TJ = 125°C - 1 mA Junction capacitance TSSD10L100SW 1 MHz, VR=4.0V CJ 540 - pF TSSD10L150SW TSSD10L200SW 325 - pF Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO. PACKING CODE PACKING CODE SUFFIX PACKAGE PACKING TSSD10LxxSW (Note 1, 2) RO G TO-252 (D-PAK) 2.5KPCS / 13"Reel Notes: 1. "xx" defines voltage from 100V (TSSD10L100SW) to 200V (TSSD10L200SW) 2. Whole series with green compound (halogen-free) EXAMPLE EXAMPLE P/N PART NO. PACKING CODE PACKING CODE SUFFIX DESCRIPTION TSSD10L100SW ROG TSSD10L100SW RO G Green compound
TSSD10L100SW - TSSD10L200SW Taiwan Semiconductor
3 Version:B1704
(TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics 25 50 75 100 125 150 Resistive or inductive load with heat sink 100 1000 10000 1 10 100 f=1.0MHz Vsig=50mVp-p 0.1 1.0 10.0 100.0 1000.0 10000.0 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TSSD10L100SW 0.1 100 Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C CAPACITANCE (pF) LEAD TEMPERATURE (°C) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) AVERAGE FORWARD CURRENT (A) TSSD10L100SW TSSD10L100SW
TSSD10L100SW - TSSD10L200SW Taiwan Semiconductor
4 Version:B1704
(TA = 25°C unless otherwise noted) Fig.5 Typical Junction Capacitance Fig.6 Typical Reverse Characteristics Fig.7 Typical Forward Characteristics 100 1000 10000 1 10 100 f=1.0MHz Vsig=50mVp-p 0.001 0.01 0.1 100 1000 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C 0.1 100 Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) TSSD10L150SW - TSSD10L200SW TSSD10L150SW - TSSD10L200SW TSSD10L150SW - TSSD10L200SW
TSSD10L100SW - TSSD10L200SW Taiwan Semiconductor
5 Version:B1704
PACKAGE OUTLINE DIMENSIONS TO-252 (D-PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM DIM. Unit (mm) Unit (inch) Min Max Min Max A 6.41 6.73 0.252 0.265 B 5.21 5.47 0.205 0.215 C 0.89 1.27 0.035 0.050 D 6.00 6.22 0.236 0.245 E 9.40 10.40 0.370 0.409 F 0.64 0.88 0.025 0.035 G 2.286(REF) 0.090 H 0.77 1.14 0.030 0.045 I 0.64 1.01 0.025 0.040 J 4.40 - 0.173 - K 5.30 - 0.209 - L 0.45 0.58 0.018 0.023 M 2.743(REF) 0.107 N 1.40 1.77 0.055 0.070 O 0.508(REF) 0.020 P 0.45 0.60 0.018 0.024 Q 2.20 2.38 0.087 0.094 Symbol Unit (mm) Unit (inch) A 5.69 0.224 B 6.18 0.243 C 2.20 0.087 D 2.29 0.090 E 1.40 0.055 F 4.57 0.180 G 10.67 0.420 P/N = Marking Code YWW = Date Code F = Factory Code
TSSD10L100SW - TSSD10L200SW Taiwan Semiconductor
6 Version:B1704
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