TSS-53LNB

TSS-53LNB MINI | Alldatasheet

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Technical content

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Product Overview Mini-Circuits TSS-53LNB+ is a low-noise amplifier offering industry-leading performance over its full fre - quency range from 500 MHz to 5 GHz. It contains internal switching, allowing the user control of the amplifier to handle both high and low signal levels by bypassing the LNA in the presence of large signals. The TSS-53LNB+ utilizes E-PHEMT technology to achieve excellent noise figure performance in a unique cascade configuration enabling the combination of very wide band performance and flat gain. This model comes in a tiny, 3 x 3mm, 12-lead MCLP package. Feature Advantages Ultra-wideband: 500 MHz – 5 GHz Ideal for a wide range of receiver applications including military, commercial wireless, and instrumentation. Very flat gain Ideal for broadband or multi-band applications. Just one, cost-efficient model required for multiple frequency usage. Minimal external matching components required. 15 dB return loss typ. Minimizes the need for external matching networks, simplifying circuit designs, and enabling the amplifier to operate over multiple bands in a single application circuit. High IP3: 48 dBm typ. (bypass mode) Provides enhanced linearity over broad frequency range under high signal conditions. Internal bypass switch feature Unique design handles low to high signal levels with minimal noise distortion. Built-in DC blocking cap at RF-Out port & separate pads for RF-Out & Vdd Simplifies biasing eliminates need for Bias-Tee at output. Compact size: 3 x 3 x 0.9 mm Saves space in dense system layouts. Low inductance, repeatable transitions, and excellent thermal contact. Key Features 50Ω 0.5 to 5 GHz The Big Deal

• Very wideband, 500 MHz – 5 GHz
• Ultra-flat gain, ±0.7 dB from 700 to 2100 MHz
• Low NF over entire frequency band, 1.4 dB
• Internal bypass switching extends useable dynamic range CASE STYLE: DQ1225 TSS-53LNB+ Wideband Low Noise Bypass Amplifier

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits simplified schematic and bonding pad description Function Pad Number Description (See Figure 2) RF-IN 2 RF-Input pad. Connect to Ground Via L1. Add a DC blocking cap in series of appropri- ate value if required. RF-OUT 8 RF-Output pad. No external DC blocking cap required. Current Control 12 Control Current pad, voltage level on this pad sets the Idd. Connect to pad 11 via 3.92 kΩ resistor. Voltage Enable 11 Voltage Enable Pad. Voltage level on this pad determines Amplifier is ON or bypassed. Vdd 9 Supply Voltage Pad. Connect to Vdd via L2. Ground 1,3,4,5,6,7,10 Paddle Connect to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path inductance for best performance. Product Features

• Wideband: 0.5-5 GHz
• Built-in Bypass switching
• Low Noise figure: 1.4 dB typ. at 2.0 GHz
• High Gain: 21.7 dB typ. at 2 GHz
• Ultra Flat Gain: 0.7 dB from 0.7 to 2.1 GHz
• P1dB: +21 dBm typ. at 2.0 GHz
• Minimal matching components
• Specified over full band operation REV. A M151107 TSS-53LNB+ TH/RS/CP 160205 General Description TSS-53LNB+ (RoHS compliant) is an advanced ultra-flat gain Low Noise wideband amplifier fabricated using E-PHEMT technology offering extremely high dynamic range over a broad frequency range. It has integrated switches enabling users to bypass the amplifier during high signal conditions. In addition, the TSS-53LNB+has good input and output return loss over a broad frequency range without the need for external matching components. Lead finish is Sn-Ag alloy over Ni and is enclosed in a 12-lead 3 x 3 mm MCLP package for good thermal performance. Typical Applications
• Wireless Base Station Systems
• Test and Measurement Systems
• Multi-Band Receivers TSS-53LNB+ CASE STYLE: DQ1225 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications 0.5-5 GHz Wideband Low Noise Bypass Amplifier 1,3,4,5,6,7,10 & paddle Voltage Enable Ground RF-Out Control Current Vdd RF-In GND GND GND Voltage Enable GND GND RF-OUT Vdd GND RF-IN GND Current Control 4 5 6 12 11 10 Top View

Monolithic E-PHEMT MMIC Amplifier Page 3 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits (5) Permanent damage may occur if any of these limits are exceeded. Electrical maximum ratings are not intended for continuous normal operation. Electrical Specifications(1) at 25°C, Zo=50Ω and Vdd=5V, unless otherwise noted TSS-53LNB+ (1) Measured on Mini-Circuits Characterization test board TB-780+. See Characterization Test Circuit (Fig. 1) (2) Current increases at P1dB (3) (Current at 85°C - Current at -45°C)/130) Absolute Maximum Ratings(5) Parameter Ratings Operating Temperature (ground lead) -40°C to 85°C Storage Temperature -65°C to 150°C Total Power Dissipation 0.7 W Input Power Amplifier-ON 8 dBm (continuous), 19 dBm (5 min max.) Amplifier Bypass 16 dBm (continuous), 29 dBm (5 min max.) DC Voltage Vdd 7.0 V DC Voltage Enable 7.0 V Max. Voltage on pad 8 15 V Parameter Condition (GHz) Amplifier-ON Amplifier-Bypass Units Min. Typ. Max. Typ. Frequency Range 0.5 5.0 GHz Noise Figure 0.5 1.3 0.7 dB 1.0 1.2 0.9 2.0 1.4 0.9 3.0 1.4 1.0 4.0 1.6 1.4 5.0 1.7 1.1 Gain 0.5 — 22.8 — -0.7 dB 1.0 — 22.7 — -0.7 3.0 — 20.5 — -1.0 4.0 — 19.5 — -0.9 5.0 — 18.7 — -1.0 Gain Flatness 0.7 - 2.1 ±0.7 ±0.14 dB Input Return Loss 0.5 — 16.0 25.8 dB 1.0 — 15.1 18.5 2.0 10.5 14.5 12.3 3.0 — 13.1 11.1 4.0 — 14.5 14.5 5.0 — 16.9 16.9 Output Return Loss 0.5 11.8 22.8 dB 1.0 12.5 17.1 2.0 17.0 12.6 3.0 14.1 11.7 4.0 10.7 14.0 5.0 10.0 11.9 Output Power @1dB compression AMP-ON (2) Input Power @1dB compression AMP-Bypass (2) 0.5 21.1 32.0 dBm 1.0 21.0 — 2.0 20.6 33.0 3.0 20.1 — 4.0 20.2 — 5.0 19.2 27.0 Output IP3 0.5 35.1 48.0 1.0 34.5 48.4 2.0 33.9 45.2 3.0 32.7 42.9 4.0 33.4 42.0 5.0 30.9 40.8 Device Operating Current (Id) 82 105 2 mA Enable Voltage (Ve) 5.0 0 V Enable Control Current (Ie) 2.0 0 mA DC Current (Id) Variation Vs. Temperature (3) -19 — µA/°C DC Current (Id) Variation Vs. Voltage 0.008 — mA/mV Thermal Resistance, junction-to-ground lead 60 — °C/W Enable Voltage (Ve) Fig. 1 Min. Typ. Max. Units Amplifier-ON 4.5 5.0 5.5 V Amplifier-Bypass 0 — 0.5 V

Monolithic E-PHEMT MMIC Amplifier Page 4 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits TSS-53LNB+ Fig 1. Block diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Characterization test board TB-780+) Gain, Return loss, Output power at 1dB compression (P1 dB) , output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output. Vd=4.75, 5.0 and 5.5V. Characterization Test Circuit Product MarkingRecommended Application Circuit Fig 2. Recommended Application Circuit. Switching Specifications (Rise/Fall Time) Parameter Min. Typ. Max. Units Amplifier ON to Bypass OFF TIME (50% Control to 10% RF) — 50 — ns FALL TIME (90 to 10% RF) — 12 — Amplifier Bypass to ON ON TIME (50% Control to 90% RF) — 740 — ns RISE TIME (10% to 90% RF) — 240 — Control Voltage Leakage — 65 — mV Component Size Value Units L1 0402 47 nH L2 0402 56 nH C1 0402 0.1 µF C2 0402 10 pF R1 0402 3.92 KΩ Component Size Value Units L1 0402 47 nH L2 0402 56 nH R1 0402 3.92 kΩ C1 0402 0.1 µF C2 0402 10 pF C3 0402 1000 pF Schmitt Trigger SN74LVC2G17DCKR Texas Instruments — MCL TSS53 black body model family designation index over pad 1

Monolithic E-PHEMT MMIC Amplifier Page 5 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits TSS-53LNB+ ESD Rating Human Body Model (HBM): Class 1A (250 to <500V) in accordance with ANSI/ESD STM 5.1 - 2001 Machine Model (MM): Class M1 (pass 50V) in accordance with ANSI/ESD STM5.2-1999 MSL Rating Moisture Sensitivity: MSL1 in accordance with IPC/JEDEC J-STD-020D Additional Detailed Technical Information additional information is available on our dash board. To access this information click here Performance Data Data Table Swept Graphs S-Parameter (S4P Files) Data Set (.zip file) Case Style DQ1225 Plastic package, exposed paddle, terminal finish: tin-silver over nickel. Tape & Reel F66 Standard quantities available on reel 7” reels with 20, 50, 100, 200, 500 or 1K devices. Suggested Layout for PCB Design PL-421 Evaluation Board TB-779+ Environmental Ratings ENV12 Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Visual Inspection Electrical Test SAM Analysis Reflow 3 cycles, 260°C Soak 85°C/85RH 168 hours Bake at 125°C, 24 hours Visual Inspection Electrical Test SAM Analysis Start Finish