TSS-53LNB-DF+

TSS-53LNB-D MINI | Alldatasheet

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Technical content

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Product Overview Mini-Circuits TSS-53LNB-D+ is a low-noise amplifier die offering industry-leading performance over its full frequency range from 500 MHz to 6 GHz. It contains internal switching, allowing the user control of the am- plifier to handle both high and low signal levels by bypassing the LNA in the presence of large signals. The TSS-53LNB-D+ utilizes E-PHEMT technology to achieve excellent noise figure performance in a unique cascade configuration enabling the combination of very wide band performance and flat gain. Feature Advantages Ultra-wideband: 500 MHz – 6 GHz Ideal for a wide range of receiver applications including military, commercial wireless, and instrumentation. Very flat gain: ±0.4 dB over 0.7-2.1 GHz Ideal for broadband or multi-band applications. Just one, cost-efficient model required for multiple frequency usage. Minimal external matching components required. 15 dB return loss typ. Minimizes the need for external matching networks, simplifying circuit designs, and enabling the amplifier to operate over multiple bands in a single application circuit. High IP3: 48 dBm typ. (bypass mode) Provides enhanced linearity over broad frequency range under high signal conditions. Internal bypass switch feature Unique design handles low to high signal levels with minimal noise distortion. Built-in DC blocking cap at RF-Out port & separate pads for RF-Out & Vdd Simplifies biasing eliminates need for Bias-Tee at output. Unpackaged Die Enables the users to integrate amplifier directly into hybrids. Key Features 50Ω 0.5 to 6 GHz The Big Deal

• Very wideband, 500 MHz – 6 GHz
• Ultra-flat gain, ±0.4 dB from 700 to 2100 MHz
• Low NF over entire frequency band, 1.4 dB
• Internal bypass switching extends useable dynamic range Wideband TSS-53LNB-D+Low Noise Bypass Amplifier Die

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Function Description (See Figure 2) RF-IN RF-Input pad. Connect to Ground Via L1. Add a DC blocking cap in series of appropri- ate value if required. RF-OUT RF-Output pad. No external DC blocking cap required. Current Control Current Control pad, Voltage level on this pad sets the Idd. Connect to pad Voltage En- able pad via 3.92 kΩ resistor. Voltage Enable Voltage Enable Pad. Voltage level on this pad determines Amplifier is ON or bypassed. Vdd Supply Voltage Pad. Connect to Vdd via L2. Ground Bottom of Die Product Features

• Wideband: 0.5-6 GHz
• Built-in Bypass switching
• Low Noise figure: 1.3 dB typ. at 2.0 GHz
• High Gain: 21.4 dB typ. at 2 GHz
• Ultra Flat Gain: 0.4 dB from 0.7 to 2.1 GHz
• P1dB: +21 dBm typ. at 2.0 GHz
• Minimal matching components REV. OR M153108 TSS-53LNB-D+ TH/RS/CP 160510 General Description TSS-53LNB-D+ (RoHS compliant) is an advanced ultra-flat gain Low Noise wideband amplifier die fabricated using E-PHEMT technology offering extremely high dynamic range over a broad frequency range. It has integrated switches enabling users to bypass the amplifier during high signal conditions. In addition, the TSS-53LNB-D+has good input and output return loss over a broad frequency range without the need for external matching components. Typical Applications
• Wireless Base Station Systems
• Test and Measurement Systems
• Multi-Band Receivers Wideband TSS-53LNB-D+Low Noise Bypass Amplifier Die Voltage Enable Ground RF-OUT Current Control Vdd RF-IN +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications Ordering Information: Refer to Last Page Simplified Schematic and Pad description

Monolithic E-PHEMT MMIC Amplifier Die Page 3 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits (3) Permanent damage may occur if any of these limits are exceeded. Electrical maximum ratings are not intended for continuous normal operation. (4) Die performance measured in industry standard 3x3 mm 12-lead package. (5) Do not exceed absolute maximum ratings. Electrical Specifications(1) at 25°C, Zo=50Ω and V=5V, unless otherwise noted TSS-53LNB-D+ (1) Measured on Mini-Circuits Die Characterization test board. See Characterization Test Circuit (Fig. 1) (2) Current increases at P1dB Absolute Maximum Ratings(3,4) Parameter Ratings Operating Temperature (bottom of die) -40°C to 85°C Total Power Dissipation 0.7 W Input Power Amplifier-ON 8 dBm (continuous), 19 dBm (5 min max.) Amplifier Bypass 16 dBm (continuous), 29 dBm (5 min max.) DC Voltage Vdd 7.0 V DC Voltage Enable 7.0 V Max. Voltage on RF-OUT Pad 15 V Parameter Condition (GHz) Amplifier-ON Amplifier-Bypass Units Min. Typ. Max. Typ. Frequency Range 0.5 6.0 GHz Noise Figure 0.5 1.4 0.8 dB 1.0 1.2 0.9 2.0 1.3 1.1 4.0 1.6 1.4 5.0 1.7 1.4 6.0 2.2 1.7 Gain 0.5 22.0 -0.8 dB 1.0 21.9 -0.9 2.0 21.4 -1.1 4.0 19.4 -1.7 5.0 18.4 -1.6 6.0 17.1 -2.0 Gain Flatness 0.7 - 2.1 ±0.4 ±0.7 dB Input Return Loss 0.5 14.9 23.9 dB 1.0 15.4 18.3 2.0 21.7 14.3 4.0 11.6 10.4 5.0 10.8 14.7 6.0 13.3 13.3 Output Return Loss 0.5 10.5 22.3 dB 1.0 11.7 17.1 2.0 16.4 15.0 4.0 10.3 10.9 5.0 7.9 13.5 6.0 6.6 11.1 Output Power @1dB compression AMP-ON (2) Input Power @1dB compression AMP-Bypass (4,5) 0.5 20.9 32.0 dBm 1.0 21.0 — 2.0 20.7 33.0 4.0 19.4 — 5.0 18.9 27.0 6.0 16.4 32.0 Output IP3 0.5 34.0 45.4 1.0 36.3 46.1 2.0 35.0 45.8 4.0 32.2 41.2 5.0 30.5 40.3 6.0 28.7 38.0 Device Operating Current (Id) 46 82 105 2 mA Enable Voltage (Ve) 5.0 0 V Enable Control Current (Ie) 2.0 0 mA DC Current (Id) Variation Vs. Voltage 0.007 — mA/mV Thermal Resistance, junction-to-ground lead 48 — °C/W Enable Voltage (Ve) Fig. 1 Min. Typ. Max. Units Amplifier-ON 4.5 5.0 5.5 V Amplifier-Bypass 0 — 0.5 V

Monolithic E-PHEMT MMIC Amplifier Die Page 4 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits TSS-53LNB-D+ Fig 1. Block diagram of Test Circuit used for Die characterization. Gain, Return loss, Output power at 1dB compression (P1 dB) , output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output. Vd=4.75, 5.0 and 5.5V. (Note 4) Characterization Test Circuit Recommended Application Circuit Fig 2. Recommended Application Circuit. Switching Specifications (Rise/Fall Time) Parameter Min. Typ. Max. Units Amplifier ON to Bypass OFF TIME (50% Control to 10% RF) — 50 — ns FALL TIME (90 to 10% RF) — 12 — Amplifier Bypass to ON ON TIME (50% Control to 90% RF) — 740 — ns RISE TIME (10% to 90% RF) — 240 — Control Voltage Leakage — 65 — mV Component Size Value Units L1 0402 47 nH L2 0402 56 nH C1 0402 0.1 µF C2 0402 10 pF R1 0402 3.92 KΩ Component Size Value Units L1 0402 47 nH L2 0402 56 nH R1 0402 3.92 kΩ C1 0402 0.1 µF C2 0402 10 pF C3 0402 1000 pF Schmitt Trigger SN74LVC2G17DCKR Texas Instruments — Die Layout Critical Dimensions Parameter Values Die Thickness, µm 100 Die Width, µm 900 Die Length, µm 1000 Bond Pad Size, µm 100 x 100 Fig 4. Bonding Pad Positions Bonding Pad Position (Dimensions in µm, Typical) Fig 3. Die Layout

Monolithic E-PHEMT MMIC Amplifier Die Page 5 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Assembly Diagram Assembly and Handling Procedure 1. Storage Dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. ESD MMIC EPHEMPT amplifier dice are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter ESD damage to dice. 3. Die Attach The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s cure condition. It is recommended to use antistatic die pick up tools only. 4. Wire Bonding Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the die to the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. Recommended Wire Length, Typical Wire Wire Length (mm) Wire Loop Height (mm) RF-IN 0.9 0.15 DC IN (Vdd), Voltage Enable, Current Control 0.5 0.15 RF-OUT 0.6 0.15 RF reference plane Material: Roger 4350B 10 Mil Dielectric Constant: 3.5 Copper thickness: 0.5 Oz Finishing: ENIG Vdd GRD DUT RF Reference Plane V Enable RF Reference Plane - No port extension

Monolithic E-PHEMT MMIC Amplifier Die Page 6 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits TSS-53LNB-D+ ESD Rating** Human Body Model (HBM): Class 1A (250 to <500V) in accordance with ANSI/ESD STM 5.1 - 2001 Machine Model (MM): Class M1 (pass 50V) in accordance with ANSI/ESD STM5.2-1999 Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Performance Data Data Table Swept Graphs S-Parameter (S2P Files) Data Set with and without port extension(.zip file) Case Style Die Die Ordering and packaging information Quantity, Package Model No. Small, Gel - Pak: 5,10,50,100 KGD* Medium†, Partial wafer: KGD*<5K Large†, Full Wafer TSS-53LNB-DG+ TSS-53LNB-DP+ TSS-53LNB-DF+ †Available upon request contact sales representative Refer to AN-60-067 Environmental Ratings ENV-80 *Known Good Dice (“KGD”) means that the dice in question have been subjected to Mini-Circuits DC test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefined range. While DC testing is not definitive, it does help to provide a higher degree of confidence that dice are capable of meeting typical RF electrical parameters specified by Mini-Circuits. Additional Detailed Technical Information additional information is available on our dash board. ** Die performance measured in industry standard 3x3 mm 12-lead package.