TSP058A PANJIT | Alldatasheet
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PAGE . 1DATE : SEP.02.2002 DATA SHEET TSP058A~TSP320A DO-15 Unit: inch ( mm ) .140(3.6) .104(2.6) .034(.86) .028(.71) 1.0(25.4) MIN. .300(7.6).230(5.8) 1.0(25.4) MIN. SUMMARY ELECTRICAL CHARACTERISTICS MECHANICAL DATA
- Case: JEDEC DO-15 molded plastic Terminals: Plated Axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Bi-directional Weight: 0.015 ounce, 0.4 gram
FEATURES
Protects by limiting voltages and shunting surge currents away from sensitive circuits Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE NOTES: 1. Specific V DRM values are available by request. 2. Specific IH values are available by request. 3. All ratings and characteristics are at 25 °C unless otherwise specified. 4. V DRM applies for the life of the device. I DRM will be in spec during and following operation of the device. 5. VBO1 is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform 6. VBO2 is at f = 60 Hz, ISC = 1 A(RMS), Vac = 1KV(RMS), RL = 1 KW, 1/2 AC cycle rebmuNtraP evititepeRdetaR etatS-ffOkaeP egatloV revokaerB egatloV etatS-nO egatloV evititepeR etatS-ffOkaeP tnerruC revokaerB tnerruC gnidloH tenrruC ecnaticapaCetatS-ffO Vm51=caV,zHM1=f( RMS) VDRM VBO I@ BO VT A1@ I DRM I BO I H CO V0@ cd CO V05@ cd V V V µA Am Am Fp Fp A850PST 85 77 5 5 008 051 44 66 61 42 A560PST5 68 85 5 0 080 519 34 65 13 2 A570PST 57 89 5 5 008 051 73 75 31 02 A090PST0 90 3155 0 080 514 34 52 18 1 A021PST 021 061 5 5 008 051 23 84 21 71 A041PST0 410 8155 0 080 519 27 496 1 A061PST 061 022 5 5 008 051 82 34 9 51 A091PST0 910 6255 0 080 518 20 484 1 A022PST 022 003 5 5 008 051 72 04 8 41 A572PST5 720 5355 0 080 517 28 383 1 A023PST 023 004 5 5 008 051 72 83 8 31
PAGE . 2DATE : SEP.02.2002 Typical Capacitance v.s. Off-state Voltage f=1 M HZ v =15mV ACdR M S T=2 5 CJ O Capacitance (pF) V Off-state Voltage (V)D Typical Capacitance v.s. Rated Repetitive Off-state Voltage f=1 M HZ T=2 5 CJ O v =15mV ACdR M S 0 20 40 60 80 100 120 140 0.01 0.1 100 150 0.001 0.0001 I Off-State Current ( /c109 T( C )J O Typical Off-state Current v.s Junction T emperature TSP220SB TSP220SA TSP220SC 25 0 25 50 75 100 125100 150 200 250 300 T , Junction Temperature ( C)J O Typical Holding Current I , Holding Current (mA) H 10A, 10/1000 microseconds Capacitance (pF) VDRM 50 100 150 200 250 300 350 V = 0V o l t sD CD V =50 Volts DCD 0.1 1 10 100 TSP220SA RATING AND CHARACTERISTIC CURVES CAPACITANCE CHARACTERISTICS F = 1 MHz, Vac = 15 mVrms rebmuNtraP ecnaticapaCetatS-ffO CO Fp cdV0 cdV1 cdV2 cdV5 cdV05 A850PST 44 66 04 15 63 94 33 44 61 42 A560PST9 34 65 39 41 37 48 22 45 13 2 A570PST 73 75 33 24 92 04 62 53 31 02 A090PST4 34 50 39 36 27 33 22 32 18 1 A021PST 23 84 82 33 42 13 12 62 21 71 A041PST9 27 45 22 31 20 38 15 296 1 A061PST 82 34 52 72 12 42 81 02 9 51 A091PST8 20 44 25 20 23 27 18 184 1 A022PST 72 04 32 52 91 32 61 81 8 41 A572PST7 28 33 24 29 12 26 17 183 1 A023PST 72 83 32 42 91 22 61 71 8 31
PAGE . 3DATE : SEP.02.2002 © Copyright PanjIt International Inc. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. PanJit Internatioal Inc. RATING AND CHARACTERISTIC CURVES IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. It will help the customer's technical experts determine that the device is compatible and interchangeable wit h similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and their characterization are constantly in process. This provides a superior performing and the highest value product. The factory should be consulted for the most recent information and for any special characteristics not described or specified. 50 100 150 200 250 300 350 0.08 0.1 0.12 0.14 .16 Temperature Coef ficient of V ,%/ C DRM o Rated V at T =25 C (V)DRM J o T emperature Coefficient of VDRM 150 200 250 300 350 T , Junction Temperature ( C)J O Temperature Coefficient (mA/ C) o Typical Holding Current T emperature Coefficient -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 10A, 10/1000 microseconds -0.1 -1.0 -1.5 -2.0 -2.5 -3.0 -25 T , Junction Temperature ( C)J O 0 25 50 75 100 125 Temperature Coefficient (mA/ C) o Typical Holding Current T emperature Coefficient 10A, 10/1000 microseconds
PAGE . 4DATE : SEP.02.2002 SELECTION GUIDE Follow these steps to select the proper Thyristor surge protector for your application: 1. Define the operating parameters for the circuit: Ambient operating temperature range Maximum telephone line operating current (highest battery and shortest copper loop) Maximum operating voltage: (Maximum DC bias + peak ringing voltage) Maximum surge current System voltage damage threshold Select device with an off-state voltage rating (V DRM) above the maximum operating voltage at the minimum operating temperature. 3. Select surge current ratings (I PPS and ITSM) ³ those which the application must withstand. 4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of t he system. 5. Verify that the maximum breakover voltage of the device is below the system damage threshold. 6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range. 7. Verify that the device's dimensions fit the application's space considerations. 8. Independently evaluate and test the suitability and performance of the device in the application gnitaR tnerruCesluPkaePevititepeR-noN kaePevititepeR-noN tnerruCegruSetatS-nO lobmyS I PPS I TSM evaWtnerruCtiucriC-trohS0 1/2 µs0 2/8 µs0 61/01 µs0 13/5 µs0 65/01 µs0 001/01 µs A02evaWegatloVtiucriC-nepO 01/2 µs 05/2.1 µs 061/01 µs 007/01 µs 065/01 µs 0001/01 µs eulaV A571A 051A 001A 58A 07A 05 MAXIMUM SURGE RATINGS (T J = 25 °C UNLESS OTHERWISE NOTED) Notes: 1. Thermal accumulation between successive surge tests is not allowed. 2. The device under test initially must be in thermal equilibrium with TJ = 25 °C. 3. Test at 1 cycle, 60 Hz. 4. Surge ratings are non-repetitive because instantaneous junction temperatures may exceed the maximum rated T Nevertheless, devices will survive many surge applications without degradation. Surge capability will not degrade over a device's typical operating life. 5. Adjust the surge generator for optimum current-wave accuracy when both voltage and current wave specifications cannot be exactly met. The current wave is more important than the voltage wave for accurate surge evaluation. 6. The waveform is defined as A/B ms where: A: (Virtual front time) = 1.25 X Rise time = 1.25 X (T b - Ta) B (Duration time to 50% level of Ipps) = T1 - T0 20% 40% 60% 80% 100% Time % Ipps TbTa T1To
PAGE . 5DATE : SEP.02.2002 gnitaR lobmyS eulaV tinU egnaRerutarepmeTnoitcnuJegarotS TSTG 051ot05- OC egnaRerutarepmeTnoitcnuJgnitarepOT J 051ot04- OC egnaRerutarepmeTtneibmAgnitarepO Ta 56ot04- OC Notes: PCB board mounted on minimum foot print. MAXIMUM THERMAL RATINGS citsiretcarahC lobmyS eulaV tinU TsdaeLotnoitcnuJecnatsiseRlamrehT L ottnecajdabatno .sezisdaplacitnediotderedlossdaelhtoB.citsalp Rθ LJ 02.xaM O W/C THERMAL CHARACTERISTICS Notes: The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite h eatsink. The junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction to lead resistance. The data shown is to be used as guideline values for preliminary engineering. ELECTRICAL CHARACTERISTICS (T C = 25°C UNLESS OTHERWISE NOTED) sretemaraP snoitidnoCtseT lobmyS .niM .xaM tinU kaePevititepeR tnerruCetatS-ffO VD Vdetar= DRM I DRM 5 µA tnerruCrevokaerB I,zH06=f SC V,smrA1= ca R,smrVK1= L K1= Ω elcycCA2/1, I OB 008 Am 1tnerruCgnidloH0 001/01 µ I,mrofevaws CS V,A01= CO R,V26= L 004= Ω I H 051A m egatloVetatS-nO I T 003=wT,A1= µ eslup1,s VT 5 V Notes: Specific I H values are available by request.
PAGE . 6DATE : SEP.02.2002 citsiretcarahC lobmyS eulaV VBO egatloVrevokaerB derusaemnwodkaerbtaroniecivedehtssorcaegatlovmumixaM esirfoetartnerrucdnaegatlovdeificepsarednu I BO tnerruCrevokaerB V(egatlovrevokaerbehttagniwolftnerrucsuoenatnatsnI BO) I H tnerruCgnidloH etats-noehtniecivedehtniatniamotderiuqertnerrucmuminiM I T tnerrucetats-nO noitidnocetats-noehtniecivedehthguorhttnerruC V T egatlovetats-nO deificepsatanoitidnocetats-noehtniecivedehtssorcaegatloV (tnerrucI T) VDRM egatloVetatS-ffOkaePevititepeRdetaR llagnidulcni,egatlovetats-ffoehtfoeulavsuoenatnatsnitsehgihehT tneisnartevititepernonllagnidulcxetubsegatlovtneisnartevititeper segatlov I DRM tnerruCetatS-ffOkaePevititepeR noitacilppaehtmorfstlusertahttnerrucfoeulav)kaep(mumixamehT Vfo DRM I PPS tnerruceslupkaePevititepeR-noN edutilpmadeificepsfotnerruceslupmikaepfoeulavmumixamdetaR ecivedehtotegamadtuohtiwdeilppaebyamtahtepahsevawdna tsetrednu td/idt nerrucetats-nofoesirfoetarlacitirC dnatshtiwnacecivedehttahttnerrucfoesirfoetarehtfoeulavdetaR .egamadtuohtiw td/vd egatloVetatS-ffOfoesiRfoetaRlacitirC Vwoleb(egatlovfoesirfoetarmumixamehT DRM esuactonlliwtaht) .etats-noehtotetats-ffoehtmorfgnihctiws VBO VBR VDRMVT IPPS ITSM IT IBO IH IBR IDRM _V +V