TSM7N65 TSC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- Low R DS(ON) 1.2Ω (Max.)
- Low gate charge typical @ 32nC (Typ.)
- Low Crss typical @ 25pF (Typ.)
- Fast Switching
Ordering Information
Part No. Package Packing TSM7N65CZ C0 TO-220 50pcs / Tube TSM7N65CI C0 ITO-220 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 650 V Gate-Source Voltage V GS ±30 V Ta = 25ºC 6.4 A Continuous Drain Current Ta = 100ºC ID 3.8 A Pulsed Drain Current * I DM 22 A Single Pulse Avalanche Energy (Note 2) EAS 216 mJ Avalanche Current (Repetitive) (Note 1) I AR 6 A TO-220 125 Maximum Power Dissipation @ Tc = 25oC ITO-220 PD W Operating Junction Temperature T J 150 ºC Storage Temperature Range T STG -55 to +150 oC * Limited by maximum junction temperature PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 650 1.2 @ VGS =10V 3 Block Diagram N-Channel MOSFET Pin Definition: 1. Gate 2. Drain 3. Source
650V N-Channel Power MOSFET 2/9 Version: A09 Thermal Performance Parameter Symbol Limit Unit TO-220 1.0 Thermal Resistance - Junction to Case ITO-220 RӨJC 4.2 oC/W Thermal Resistance - Junction to Ambient R ӨJA 62.5 oC/W Notes: Surface mounted on FR4 board t ≤ 10sec Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, ID = 250uA BV DSS 650 -- -- V Drain-Source On-State Resistance V GS = 10V, ID = 3A R DS(ON) -- 1.0 1.2 Ω Gate Threshold Voltage V DS = VGS, ID = 250uA V GS(TH) 2.0 -- 4.0 V VDS = 650V, VGS = 0V -- -- 1 Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V, TC=125ºC IDSS -- -- 50 uA Gate Body Leakage V GS = ±20V, VDS = 0V I GSS -- -- ±10 uA Forward Transfer Conductance V DS = 8V, ID = 1A g fs -- 3.7 -- S Diode Forward Voltage I S = 6A, VGS = 0V V SD -- -- 1.6 V Dynamic b Total Gate Charge Q g -- 32 46 Gate-Source Charge Q gs -- 6 -- Gate-Drain Charge VDS = 300V, ID = 6A, VGS = 10V Qgd -- 11 -- nC Input Capacitance C iss -- 905 -- Output Capacitance C oss -- 115 -- Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Crss -- 25 -- pF Switching c Turn-On Delay Time t d(on) -- 14 -- Turn-On Rise Time t r -- 14 -- Turn-Off Delay Time t d(off) -- 47 -- Turn-Off Fall Time VGS = 10V, ID = 6A, VDD = 300V, RG = 25Ω tf -- 19 -- nS Reverse Recovery Time t fr -- 638 -- nS Reverse Recovery Charge VGS = 0V, IS = 6A, dIF/dt = 100A/us Qfr -- 4.8 -- uC Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. V DD = 50V, IAS=3.6A, L=30mH, VDS=500V 3. Pulse test: pulse width ≤300uS, duty cycle ≤2% 4. Essentially Independent of Operating Temperature
650V N-Channel Power MOSFET 3/9 Version: A09 Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
650V N-Channel Power MOSFET 4/9 Version: A09 Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area - TO-220 Maximum Safe Operating Area - ITO-220 Normalized Thermal Transient Impedance, Junction-to-Ambient
650V N-Channel Power MOSFET 5/9 Version: A09 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform
650V N-Channel Power MOSFET 6/9 Version: A09 Diode Reverse Recovery Time Test Circuit & Waveform
650V N-Channel Power MOSFET 7/9 Version: A09 ITO-220 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code ITO-220 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX A 10.04 10.07 0.395 0.396 B 6.20 (typ.) 0.244 (typ.) C 2.20 (typ.) 0.087 (typ.) D ∮1.40 (typ.) ∮0.055 (typ.) E 15.0 15.20 0.591 0.598 F 0.52 0.54 0.020 0.021 G 2.35 2.73 0.093 0.107 H 13.50 13.55 0.531 0.533 I 1.11 1.49 0.044 0.058 J 2.60 2.80 0.102 0.110 K 4.49 4.50 0.176 0.177 L 1.15 (typ.) 0.045 (typ.) M 3.03 3.05 0.119 0.120 N 2.60 2.80 0.102 0.110 O 6.55 6.65 0.258 0.262
650V N-Channel Power MOSFET 8/9 Version: A09 TO-220 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code TO-220 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX A 10.000 10.500 0.394 0.413 B 3.740 3.910 0.147 0.154 C 2.440 2.940 0.096 0.116 D - 6.350 - 0.250 E 0.381 1.106 0.015 0.040 F 2.345 2.715 0.092 0.058 G 4.690 5.430 0.092 0.107 H 12.700 14.732 0.500 0.581 J 14.224 16.510 0.560 0.650 K 3.556 4.826 0.140 0.190 L 0.508 1.397 0.020 0.055 M 27.700 29.620 1.060 1.230 N 2.032 2.921 0.080 0.115 O 0.255 0.610 0.010 0.024 P 5.842 6.858 0.230 0.270
650V N-Channel Power MOSFET 9/9 Version: A09 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Exce pt as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liab ility or warranties relating to fitness fo r a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own ri sk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.