TSM7N65_11 TSC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • Low R DS(ON) 1.2 Ω (Max.)
  • Low gate charge typical @ 32nC (Typ.)
  • Low Crss typical @ 25pF (Typ.)
  • Fast Switching Block Diagram N-Channel MOSFET

Ordering Information

Part No. Package Packing TSM7N65CZ C0 TO-220 50pcs / Tube TSM7N65CI C0 ITO-220 50pcs / Tube Absolute Maximum Rating (TA=25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Continuous Drain Current Ta =25ºC ID 6.4 A Ta =100ºC 3.8 A Pulsed Drain Current * IDM 22 A Single Pulse Avalanche Energy (Note 2) EAS 216 mJ Repetitive Avalanche Current (Note 1) I AR 6 A Total Power Dissipation @ TC = 25 oC TO-220 PTOT 125 W ITO-220 30 Operating Junction Temperature T J 150 ºC Storage Temperature Range TSTG -55 to +150 oC * Limited by maximum junction temperature PRODUCT SUMMARY VDS (V) R DS(on) (Ω) ID (A) 650 1.2 @ V GS =10V 3 Pin Definition : 1. Gate 2. Drain 3. Source

650V N-Channel Power MOSFET 2/9 Version: C11 Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case TO-220 R ӨJC 1.0 oC/W ITO-220 4.2 Thermal Resistance - Junction to Ambient R ӨJA 62.5 oC/W Note: Surface mounted on FR4 board t ≤ 10sec Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = 250uA BV DSS 650 -- -- V Drain-Source On-State Resistance VGS = 10V, I D = 3A R DS(ON) -- 1.0 1.2 Ω Gate Threshold Voltage V DS = VGS , I D = 250uA V GS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 650V, V GS = 0V IDSS -- -- 1 uA VDS = 650V, V GS = 0V, TC =125ºC -- -- 50 Gate Body Leakage V GS = ±20V, V DS = 0V I GSS -- -- ±10 uA Forward Transfer Conductance V DS = 8V, I D = 1A g fs -- 3.7 -- S Diode Forward Voltage I S = 6A, V GS = 0V V SD -- -- 1.6 V Dynamic Total Gate Charge VDS = 300V, I D = 6A, VGS = 10V Q g -- 32 46 nC Gate-Source Charge Q gs -- 6 -- Gate-Drain Charge Q gd -- 11 -- Input Capacitance VDS = 25V, V GS = 0V, f = 1.0MHz C iss -- 905 -- pF Output Capacitance C oss -- 115 -- Reverse Transfer Capacitance C rss -- 25 -- Switching Turn-On Delay Time VGS = 10V, I D = 6A, VDD = 300V, R G = 25 Ω td(on) -- 14 -- nS Turn-On Rise Time tr -- 14 -- Turn-Off Delay Time td(off) -- 47 -- Turn-Off Fall Time tf -- 19 -- Reverse Recovery Time VGS = 0V, I S = 6A, dI F/dt = 100A/us tfr -- 638 -- nS Reverse Recovery Charge Q fr -- 4.8 -- uC Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, I AS =3.6A, L=30mH, VDS =500V Note 3: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 4: Essentially Independent of Operating Temperature

650V N-Channel Power MOSFET 3/9 Version: C11 Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

650V N-Channel Power MOSFET 4/9 Version: C11 Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area - TO-220 Maximum Safe Operating Area - ITO-220 Normalized Thermal Transient Impedance, Junction-to-Ambient

650V N-Channel Power MOSFET 5/9 Version: C11 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform E AS Test Circuit & Waveform

650V N-Channel Power MOSFET 6/9 Version: C11 Diode Reverse Recovery Time Test Circuit & Waveform

650V N-Channel Power MOSFET 7/9 Version: C11 ITO-220 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code (A =Jan, B =Feb, C =Mar, D =Apl, E=May, F=Jun, G =Jul, H =Aug, I=Sep, J=Oct, K =Nov, L=Dec) L = Lot Code ITO-220 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 10.04 10.07 0.395 0.396 B 6.20 (typ.) 0.244 (typ.) C 2.20 (typ.) 0.087 (typ.) D ∮1.40 (typ.) ∮0.055 (typ.) E 15.0 15.20 0.591 0.598 F 0.52 0.54 0.020 0.021 G 2.35 2.73 0.093 0.107 H 13.50 13.55 0.531 0.533 I 1.11 1.49 0.044 0.058 J 2.60 2.80 0.102 0.110 K 4.49 4.50 0.176 0.177 L 1.15 (typ.) 0.045 (typ.) M 3.03 3.05 0.119 0.120 N 2.60 2.80 0.102 0.110 O 6.55 6.65 0.258 0.262

650V N-Channel Power MOSFET 8/9 Version: C11 TO-220 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code (A =Jan, B =Feb, C =Mar, D =Apl, E=May, F=Jun, G =Jul, H =Aug, I=Sep, J=Oct, K =Nov, L=Dec) L = Lot Code TO-220 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 10.000 10.500 0.394 0.413 B 3.740 3.910 0.147 0.154 C 2.440 2.940 0.096 0.116 D - 6.350 - 0.250 E 0.381 1.106 0.015 0.040 F 2.345 2.715 0.092 0.058 G 4.690 5.430 0.092 0.107 H 12.700 14.732 0.500 0.581 J 14.224 16.510 0.560 0.650 K 3.556 4.826 0.140 0.190 L 0.508 1.397 0.020 0.055 M 27.700 29.620 1.060 1.230 N 2.032 2.921 0.080 0.115 O 0.255 0.610 0.010 0.024 P 5.842 6.858 0.230 0.270

650V N-Channel Power MOSFET 9/9 Version: C11 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.