TSM75N75 TSC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

  • Advanced Trench Technology
  • Low R DS(ON) 11m Ω (Max.)
  • Low gate charge typical @ 81nC (Typ.)
  • Low Crss typical @ 339pF (Typ.) Block Diagram N-Channel MOSFET

Ordering Information

Part No. Package Packing TSM75N75CZ C0 TO-220 50pcs / Tube Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC =25° C ID A TC =70° C 53 TA=25° C 11.5 TA=70° C 9.2 Drain Current-Pulsed Note 1 IDM 300 A Avalanche Current, L=0.3mH IAS , I AR 53 A Avalanche Energy, L=0.3mH EAS , E AR 400 mJ Maximum Power Dissipation TC =25° C PD W TC =70° C 56 TA=25° C 2 TA=70° C 1.3 Storage Temperature Range TSTG -55 to +150 ° C Operating Junction Temperature Range T J -55 to +150 ° C * Limited by maximum junction temperature Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case R ӨJC 1.44 oC/W Thermal Resistance - Junction to Ambient R ӨJA 62.5 oC/W Notes: Surface mounted on FR4 board t ≤ 10sec Pin Definition : 1. Gate 2. Drain 3. Source

75V N-Channel Power MOSFET 2/4 Version: A12 Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, I D = 250uA BV DSS 75 -- -- V Drain-Source On-State Resistance VGS = 10V, I D = 20A R DS(ON) -- 8 11 m Ω Gate Threshold Voltage V DS = VGS , I D = 250uA V GS(TH) 2 3 4 V Zero Gate Voltage Drain Current VDS = 60V, V GS = 0V I DSS -- -- 1 uA Gate Body Leakage V GS = ±20V, V DS = 0V I GSS -- -- ±100 nA Dynamic Total Gate Charge VDS = 30V, I D = 20A, VGS = 10V Q g -- 81 -- nC Gate-Source Charge Q gs -- 23 -- Gate-Drain Charge Q gd -- 24 -- Input Capacitance VDS = 30V, V GS = 0V, f = 1.0MHz C iss -- 4382 -- pF Output Capacitance C oss -- 668 -- Reverse Transfer Capacitance C rss -- 339 -- Switching Turn-On Delay Time VGS = 10V, VDS = 30V, R G = 3.3 Ω td(on) -- 25 -- nS Turn-On Rise Time tr -- 19 -- Turn-Off Delay Time td(off) -- 85 -- Turn-Off Fall Time tf -- 43 -- Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage V GS =0V, I S=20A V SD - 0.8 1.3 V Reverse Recovery Time IS = 20A, TJ=25 oC dI/dt = 100A/us tfr 36 nS Reverse Recovery Charge Q fr 53 nC Notes: 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while R θCA is determined by the user's board design. R θJA shown below for single device operation on FR-4 in still air

75V N-Channel Power MOSFET 3/4 Version: A12 TO-220 Mechanical Drawing TO-220 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 10.000 10.500 0.394 0.413 B 3.740 3.910 0.147 0.154 C 2.440 2.940 0.096 0.116 E 0.381 1.106 0.015 0.040 F 2.345 2.715 0.092 0.058 G 4.690 5.430 0.092 0.107 H 12.700 14.732 0.500 0.581 J 14.224 16.510 0.560 0.650 K 3.556 4.826 0.140 0.190 L 0.508 1.397 0.020 0.055 M 27.700 29.620 1.060 1.230 N 2.032 2.921 0.080 0.115 O 0.255 0.610 0.010 0.024 P 5.842 6.858 0.230 0.270

75V N-Channel Power MOSFET 4/4 Version: A12 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.