TSM75N03 TSC | Alldatasheet
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hI) SEMICONDUCTOR TS M 75N 03 25V N-Channel MOSFET (2) RoHS COMPLIANCE TO-252 Pin Definition: PRODUCT SUMMARY
1 Gate Vos (V) lo (A)
Ya | 3. Source 96 4.5 @ Vos= 10V 20 % 6.5 @ Vos= 4.5V 20 123 Features Block Diagram e Advance Trench Process Technology . * High Density Cell Design for Ultra Low On-resistance al Application e Load Switch e@ Dc-DC Converters and Motors Drivers | Ordering Information on Part No. Packing TSM75NO3CP RO TO-252__| 2.5Kpcs/ 13” Reel Seite N-Channel MOSFET Absolute Maximum Rating (Ta = 25°C unless otherwise noted) Parameter [__Symbot_ [Limit |___unit Drain-Source Voltage v Gate-Source Voltage v Continuous Drain Current, Ves @4.5V. [| bo | 6 | A Pulsed Drain Current, Vos @4.5V [tw | 2s A Continuous Source Current (Diode Conduction)*” | ots Tt A Single Pulse Drain to Source Avalanche Energy (Vop = 25V, Vos=20V, Ip=26A, L=0.5mH) EAS 150 md | 208 Maximum Power Dissipation Ta 25°C 2.08 w [Ta = 70°C Operating Junction Temperature °c Operating Junction and Storage Temperature Range -55 to +150 °c Thermal Performance Parameter Symbol Unit Lead Temperature (1/8" from case) s Junction to Case Thermal Resistance °C/W. Junction to Ambient Thermal Resistance (PCB mounted. | Rew S| CSC °CIW. Notes: a. Maximum DC current limited by the package b. Surface Mounted on 1” x 1" FR4 Board, ts 10 sec. 1/4 Version: Preliminary
% SEMICONDUCTOR TSM75N03 25V N-Channel MOSFET Pe) RoHS COMPLIANCE Electrical Specifications (Ta = 25°C unless otherwise noted) Static Drain-Source Breakdown Voltage | Vos= OV, Ip=250uA | BVoss_| 25 | - | - [| Vv Gate Threshold Vottage Vos=Vos.lp=250uA_ | Vesmy | 13 | ~- | 30 |v Gate Body Leakage Vos=#12V,Vos=0V_ | toss | ~ | =~ | +100 | na Zero Gate Voltage Drain Current Vos = 25V, Ves = 0V | wss | - | - | 10 | uA On-State Drain Current Vos 25V, Ves = 10V | tom | 75 [| ~ | ~ | A Drain-Source On-State Resistance Rosin) mQ Ves= 10V, ln=20A | - | 37 | 45 | Forward Transconductance Vos = 15V, Ip = 18A | o | - | o% | -~ | Ss Diode Forward Voltage Is=20A,Vos=0v | Vo | ~ | os | 13 |v Dynamic? Gate-Drain Charge a | Qs | - | 76 | ~ | Output Capacitance ° eee LT Coss | = | t025 |] f= 1.0MHz Reverse Transfer Capacitance [| Gee | - | sa | - | Switching® Tum-On Delay Tine Var wvncoem, Pua [=| # [=] Turn-Off Delay Time Rozta CE on | te TT Turn-Off Fall Time ° po « | - | so | - | Notes: a, pulse test: PW <300uS, duty cycle <2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. Voo ton tot vin Ro tavon) ut = tdiott Fr Md 0. Vout Output, Vout 10% 10%, Voen INVERTED rn Re i OUT on 50% 50% a Input, Vin 10% PULSE WIDTH Switching Test Circuit Switchin Waveforms 2/4 Version: Preliminary
2] Zemiconoucron| TSM75N03 (a) RoHS 25V N-Channel MOSFET COMPLIANCE SOT-252 Mechanical Drawing D 7 [min [max [Min [MAX | ow > Bl c | c | 540 | 560 | 0213 | 0.220 | ie | o | 640 | 665 | 0252 | 0.262 | LyEnva| |e | 220 | 240 | 0087 | 0.094 | a Li J oe Litoti ke Li] |c | 520 | 540 | 0205 | 0213 | POE gl T eH ia EL) | 1 | 090 | 150 | 0035 | 0.059 _| Pf 1+—_ os FSU Ly Tx [050 | 110 | 0.020 | 0.083 | 3/4 Version: Preliminary
95 SEMICONDUCTOR TSM75N03
(a) RoHS 25V N-Channel MOSFET COMPLIANCE Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4l4 Version: Preliminary