TSM70N750CPROG

TSM70N750 TSC | Alldatasheet

Document overview

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• PDF pages: 8

Technical content

Document Number: DS_P0000139 1 Version: B15 N-Channel Power MOSFET 700V, 6A, 0.75 Ω

FEATURES

• Super-Junction technology
• High performance due to small figure-of-merit
• High ruggedness performance
• High commutation performance KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 700 V R DS(on) (max) 0.75 Ω Q g 10.7 nC APPLICATION
• Power Supply
• Lighting TO -251 (IPAK) TO -252 (DPAK) Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 V Continuous Drain Current (Note 1) TC = 25°C ID A TC = 100°C 3.6 Pulsed Drain Current (Note 2) IDM 18 A Total Power Dissipation @ T C = 25°C P DTOT 62.5 W Single Pulsed Avalanche Energy (Note 3) E AS 81 mJ Single Pulsed Avalanche Current (Note 3) I AS 1.8 A Operating Junction and Storage Temperature Range T J, T STG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R ӨJC 2.0 °C/W Junction to Ambient Thermal Resistance R ӨJA 62 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while R ӨCA is determined by the user’s board design. R ӨJA shown below for single device operation on FR-4 PCB in still air.

Document Number: DS_P0000139 2 Version: B15 ELECTRICAL SPECIFICATIONS (TC = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static (Note 4) Drain-Source Breakdown Voltage VGS = 0V, I D = 250µA BV DSS 700 -- -- V Gate Threshold Voltage V DS = VGS , I D = 250µA V GS(TH) 2 3 4 V Gate Body Leakage V GS = ±30V, V DS = 0V I GSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 700V, V GS = 0V I DSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, I D = 1.8A R DS(on) -- 0.62 0.75 Ω Dynamic (Note 5) Total Gate Charge VDS = 380V, I D = 6A, VGS = 10V Q g -- 10.7 -- nC Gate-Source Charge Q gs -- 2.8 -- Gate-Drain Charge Q gd -- 3.5 -- Input Capacitance VDS = 100V, V GS = 0V, f = 1.0MHz C iss -- 555 -- pF Output Capacitance C oss -- 39 -- Gate Resistance f = 1MHz, open drain R g -- 2.7 -- Ω Switching (Note 6) Turn-On Delay Time VDD = 380V, R GEN = 25 Ω, ID = 6A, V GS = 10V, td(on) -- 15 -- ns Turn-On Rise Time tr -- 26 -- Turn-Off Delay Time td(off) -- 30 -- Turn-Off Fall Time tf -- 18 -- Source-Drain Diode (Note 4) Forward On Voltage IS = 6A, V GS = 0V V SD -- -- 1.4 V Reverse Recovery Time VR = 200V, I S = 3A dI F/dt = 100A/ µs trr -- 182 -- ns Reverse Recovery Charge Q rr -- 1.3 -- µC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 50mH, I AS = 1.8A, V DD = 50V, R G = 25 Ω, Starting TJ = 25 oC 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature.

Document Number: DS_P0000139 3 Version: B15

ORDERING INFORMATION

PART NO. PACKAGE PACKING TSM70N750CH C5G TO-251 (IPAK) 75pcs / Tube TSM70N750CP ROG TO-252 (DPAK) 2,500pcs / 13” Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition

Document Number: DS_P0000139 4 Version: B15 CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage

Document Number: DS_P0000139 5 Version: B15 CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Capacitance vs. Drain-Source Voltage BV DSS vs. Junction Temperature Maximum Safe Operating Area (DPAK/IPAK) Normalized Thermal Transient Impedance 10 -3 10 -2 10 -1 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (s) 10 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse Normalized Effective Transient Thermal Impedance

Document Number: DS_P0000139 6 Version: B15 PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-251 (IPAK) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z)

Document Number: DS_P0000139 7 Version: B15 PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-252 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z)

Document Number: DS_P0000139 8 Version: B15 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.