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100V N-Channel Power MOSFET 1/8 Version: D14 TO -25 2 (DPAK) TO -25 1 (IPAK) Key Parameter Performance Parameter Value Unit VDS 100 V R DS(on) (max) 13 m Ω Q g 145 nC TO -25 1S (IPAK SL)
Ordering Information
Part No. Package Packing TSM70N10CP ROG TO-252 2.5kpcs / 13” Reel TSM70N10CH C5G TO-251 75pcs / Tube TSM70N10CH X0G TO-251S 75pcs / Tube Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Block Diagram N-Channel MOSFET Absolute Maximum Ratings (TA=25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 3) TC =25°C ID A TC =70°C 61 TA=25°C 12 TA=70°C 9 Drain Current-Pulsed (Note 1) IDM 150 A Avalanche Current, L=0.5mH IAS , I AR 25 A Avalanche Energy, L=0.5mH EAS , E AR 156 mJ Maximum Power Dissipation (Note 2) TC =25°C PD 120 W TC =70°C 80 TA=25°C 8.3 TA=70°C 5.3 Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range T J -55 to +150 °C Pin Definition : 1. Gate 2. Drain 3. Source
100V N-Channel Power MOSFET 2/8 Version: D14 Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case R ӨJC 1 oC/W Thermal Resistance - Junction to Ambient R ӨJA 40 oC/W Electrical Specifications (TJ=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, I D = 250µA BV DSS 100 -- -- V Drain-Source On-State Resistance VGS = 10V, I D = 30A R DS(ON) -- 10 13 m Ω Gate Threshold Voltage V DS = VGS , I D = 250µA V GS(TH) 2 3 4 V Zero Gate Voltage Drain Current VDS = 80V, V GS = 0V I DSS -- -- 1 µA Gate Body Leakage V GS = ±20V, V DS = 0V I GSS -- -- ±100 nA Dynamic Total Gate Charge VDS = 50V, I D = 30A, VGS = 10V Q g -- 145 -- nC Gate-Source Charge Q gs -- 25 -- Gate-Drain Charge Q gd -- 43 -- Input Capacitance VDS = 30V, V GS = 0V, f = 1.0MHz C iss -- 4300 -- pF Output Capacitance C oss -- 300 -- Reverse Transfer Capacitance C rss -- 120 -- Switching Turn-On Delay Time VGS = 10V, VDS = 50V, R G = 3Ω td(on) -- 27 -- ns Turn-On Rise Time tr -- 13 -- Turn-Off Delay Time td(off) -- 15 -- Turn-Off Fall Time tf -- 42 -- Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage V GS =0V, I S=30A V SD -- 0.8 1.3 V Reverse Recovery Time IS = 30A, TJ=25oC dI/dt = 100A/µs trr -- 165 -- ns Reverse Recovery Charge Q rr -- 175 -- nC Notes: 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. R ӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user’s board design. R ӨJA shown below for single device operation on FR-4 PCB in still air 3. The maximum current is limited by package.
100V N-Channel Power MOSFET 3/8 Version: D14 Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Gate-Source Voltage Gate Charge On-Resistance vs. Junction Temperature Capacitance
100V N-Channel Power MOSFET 4/8 Version: D14 Electrical Characteristics Curves Maximum Safe Operating Area Threshold Voltage vs. Temperature Normalized Thermal Transient Impedance, Junction-to-Ambient IDS =250 µA
100V N-Channel Power MOSFET 5/8 Version: D14 TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O =Jan, P=Feb, Q =Mar, R =Apl, S=May, T=Jun, U =Jul, V=Aug, W =Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
100V N-Channel Power MOSFET 6/8 Version: D14 TO-251 (IPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O =Jan, P=Feb, Q =Mar, R =Apl, S=May, T=Jun, U =Jul, V=Aug, W =Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
100V N-Channel Power MOSFET 7/8 Version: D14 TO-251S (IPAK SL) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O =Jan, P=Feb, Q =Mar, R =Apl, S=May, T=Jun, U =Jul, V=Aug, W =Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
100V N-Channel Power MOSFET 8/8 Version: D14 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.