TSM6866D TSC | Alldatasheet

Document overview

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Technical content

Features

— Advanced trench process technology — High density cell design for ultra low on-resistance — Excellent thermal and electrical capabilities — Specially designed for Li-ion battery packs. — Battery switch application

Ordering Information

Part No. Packing Package TSM6968DCA Tape & Reel 3,000/per reel TSSOP-8 Block Diagram Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20V V Gate-Source Voltage V GS ± 12 V Continuous Drain Current, VGS @4.5V. I D 6.5 A Pulsed Drain Current, VGS @4.5V I DM 30 A Ta = 25 oC 1.5 Maximum Power Dissipation Ta = 70 oC PD 0.96 W Operating Junction Temperature T J +150 oC Operating Junction and Storage Temperature Range T J, TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Foot (Drain) Thermal Resistance R θjf 35 oC/W Junction to Ambient Thermal Resistance (PCB mounted) R θja 83 oC/W Note: Surface mounted on FR4 board t<=10sec. Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain

TSM6866D 2-2 2003/12 rev. A

Electrical Characteristics

Rate ID = 6.5A, (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, ID = 250uA BV DSS 20 -- -- V Drain-Source On-State Resistance V GS = 4.5V, ID = 6.5A R DS(ON) -- 22 28 Drain-Source On-State Resistance V GS = 2.5V, ID = 5.5A R DS(ON) -- 30 40 mΩ Gate Threshold Voltage V DS = VGS, ID = 250uA V GS(TH) 0.5 1.0 -- V Zero Gate Voltage Drain Current V DS = 20V, VGS = 0V I DSS -- -- 10 uA Gate Body Leakage V GS = ± 4.5V, VDS = 0V I GSS -- -- ± 100 nA Gate Body Leakage V GS = ± 12V, VDS = 0V I GSS -- -- ± 10 mA On-State Drain Current V GS = 4.5V, VDS >= 5V I D(ON) 30 -- -- A Forward Transconductance V DS = 10V, ID = 6.5A g fs -- 40 -- S Dynamic Total Gate Charge Q g -- 12 -- Gate-Source Charge Q gs -- 2 -- Gate-Drain Charge VDS = 10V, ID = 6.5A, VGS = 4.5V Qgd -- 3.5 -- nC Turn-On Delay Time t d(on) -- 75 100 Turn-On Rise Time t r -- 125 150 Turn-Off Delay Time t d(off) -- 600 720 Turn-Off Fall Time VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω tf -- 300 360 nS Input Capacitance C iss -- 870 -- Output Capacitance C oss -- 320 -- Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz Crss -- 240 -- pF Source-Drain Diode Max. Diode Forward Current I S -- -- 1.0 A Diode Forward Voltage I S = 1.0A, VGS = 0V V SD -- 0.7 1.2 V Note : pulse test: pulse width <=300uS, duty cycle <=2%

TSM6866D 3-3 2003/12 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)

TSM6866D 4-4 2003/12 rev. A TSSOP-8 Mechanical Drawing TSSOP-8 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX A 6.20 6.60 0.244 0.260 a 4.30 4.50 0.170 0.177 B 2.90 3.10 0.114 0.122 C 0.65 (typ) 0.025 (typ) D 0.25 0.30 0.010 0.019 E 1.05 1.20 0.041 0.049 e 0.05 0.15 0.002 0.009 F 0.127 0.005 L 0.50 0.70 0.020 0.028